Abstract:
PURPOSE: A shielding structure for shielding crosstalk in a semiconductor chip with a through silicon via is provided to prevent crosstalk between through silicon vias by including a crosstalk shielding unit which surrounds the through silicon via. CONSTITUTION: A plurality of through silicon vias(220A,220B) pass through a silicon substrate(210). A crosstalk shielding unit(230) surrounds at least one through silicon via and is formed on the inner side of an insulator formed on the upper side of the silicon substrate. A ring(230A) surrounds the through silicon via.
Abstract:
본 발명은 관통실리콘비아간의 크로스토크를 차폐하고 기판노이즈를 최소화할 수 있는 반도체칩을 제공하기 위한 것으로, 본 발명의 반도체칩은 실리콘기판; 상기 실리콘기판을 관통하는 복수의 관통실리콘비아; 및 적어도 어느 하나의 상기 관통실리콘비아의 주변을 에워싸는 크로스토크쉴딩부를 포함하고, 상술한 본 발명은 관통실리콘비아의 주변을 에워싸는 크로스토크쉴딩부를 구비함으로써 관통실리콘비아간의 크로스토크를 방지할 수 있는 효과가 있으며, 또한, 본 발명은 캐패시터를 이용하여 관통실리콘비아의 주변을 에워쌈으로써 관통실리콘비아간의 크로스토크 및 기판노이즈를 방지할 수 있는 효과가 있다. 반도체패키지, 관통실리콘비아, 크로스토크, 노이즈, 인터비아
Abstract:
An SiP(System-in-Package) having reduced effect on an antenna by a conductor and a method for designing the same are provided to minimize current or an electromagnetic field induced to the conductor by forming a slit or a slot on a conductor plane or forming the conductor plane in a line shape. An SiP includes an antenna and a first conductor(604). The antenna is integrated with the SiP and mounted on a top surface of an SiP substrate, and transmits and receives data. The first conductor has a plane shape, is connected to a bottom surface of the SiP substrate, and has a slit(606). The slit reduces current or an electromagnetic field induced to the first conductor by current or an electromagnetic field of the antenna. The slit is perpendicular to a direction of a current path of the antenna.