Abstract:
PURPOSE: A device for sensing a long wavelength infrared ray having a quantum structure coupled to a camel hump diode is provided to increase sensitivity of an infrared sensing device, by integrating the quantum structure in a light absorption region of the camel hump diode. CONSTITUTION: The camel hump diode has a source layer(1), a gate layer(2) and a drain layer(3). The infrared sensing device is composed of quantum dots integrated in the drain layer which is the light absorption region of the camel hump diode, so that charges in a potential barrier layer(4) are reduced by absorbed light to amplify photocurrent.
Abstract:
PURPOSE: A device for sensing a long wavelength infrared ray having a quantum structure coupled to a camel hump diode is provided to increase sensitivity of an infrared sensing device, by integrating the quantum structure in a light absorption region of the camel hump diode. CONSTITUTION: The camel hump diode has a source layer(1), a gate layer(2) and a drain layer(3). The infrared sensing device is composed of quantum dots integrated in the drain layer which is the light absorption region of the camel hump diode, so that charges in a potential barrier layer(4) are reduced by absorbed light to amplify photocurrent.