公开(公告)号：KR101180385B1

公开(公告)日：2012-09-10

申请号：KR1020110083087

申请日：2011-08-19

Applicant: 한국과학기술원

Inventor： 조용훈 ,  박승환 ,  안도열

IPC: H01L33/04 ,  H01L33/06

CPC classification number: H01L33/06 ,  H01L33/36

Abstract: PURPOSE: A semiconductor light emitting device is provided to eliminate the polarity of an internal electric field through invalidation of piezoelectric polarization and spontaneous polarization between a well and an obstacle by making an active layer of an InGaN/MgZnO quantum well structure having an internal electric field of zero grow up. CONSTITUTION: An active layer is formed on a substrate. The active layer creates light through recombination of an electron and a hole. The active layer selectively controls indium composition within a well and Mg composition within an obstacle. The active layer is comprised of a quantum well structure including an InxGa1-xN well layer and an MgyZn1-yO barrier. The Mg composition within the obstacle is increased with the indium composition within the well.

Abstract translation: 目的：提供一种半导体发光器件，通过使具有内部电场的InGaN / MgZnO量子阱结构的有源层，通过使井和障碍物之间的压电极化和自发极化无效来消除内部电场的极性 零成长。 构成：在衬底上形成有源层。 有源层通过电子和孔的复合产生光。 有源层选择性地控制阱内的铟组成和障碍物内的Mg组成。 有源层由包括In x Ga 1-x N阱层和Mg y Zn 1-y O势垒的量子阱结构组成。 障碍物内的Mg组成随着铟组成在井内而增加。