公开(公告)号：KR1020010019612A

公开(公告)日：2001-03-15

申请号：KR1019990036126

申请日：1999-08-28

Applicant: 한국과학기술원

Inventor： 소재현 ,  오민호 ,  배선혁 ,  양승만 ,  김도현

IPC: H01L21/304

CPC classification number: C09K3/1463 ,  C01B33/126 ,  C09G1/02

Abstract: PURPOSE: A method for producing silica slurry for a wafer polishing is provided by silica grains having a relatively higher weight percent and made economically. CONSTITUTION: A method producing silica slurry includes a step of growing spherical silica grains having uniform size distribution. Here, thermally decomposed silica grains or colloid silica grains are used as growing seeds, and hydrolysis and condensation polymerization reactions of tetraethylorthosilicate(TEOS) are made under a base atmosphere. The grown silica grains are then dispersed into a water solution substituted for alcoholic solvent as dispersion media by using a vacuum evaporator and a centrifugal separator. In addition, the silica grains are treated with heat in an autoclave for one or two hours. This method can provide silica grains of required size by controlling amount of reactant and using various-sized growing seeds.

Abstract translation: 目的：用于制造用于晶片抛光的二氧化硅浆料的方法由具有相对较高重量百分数并经济地制备的二氧化硅颗粒提供。 构成：生产二氧化硅浆料的方法包括生长具有均匀尺寸分布的球形二氧化硅颗粒的步骤。 这里，使用热分解的二氧化硅颗粒或胶体二氧化硅颗粒作为生长种子，在基础气氛下制备原硅酸四乙酯（TEOS）的水解和缩聚反应。 然后通过使用真空蒸发器和离心分离器将生长的二氧化硅颗粒分散在取代醇溶剂作为分散介质的水溶液中。 此外，二氧化硅颗粒在高压釜中加热处理1或2小时。 该方法可以通过控制反应物的量并使用各种尺寸的生长种子来提供所需尺寸的二氧化硅颗粒。

公开(公告)号：KR100329123B1

公开(公告)日：2002-03-21

申请号：KR1019990036126

申请日：1999-08-28

Applicant: 한국과학기술원

Inventor： 소재현 ,  오민호 ,  배선혁 ,  양승만 ,  김도현

IPC: H01L21/304

CPC classification number: C09K3/1463 ,  C01B33/126 ,  C09G1/02

Abstract: 본발명은웨이퍼폴리싱용실리카슬러리의제조방법에관한것으로, 좀더상세하게는기상법이나침전법등 기존의상용화된방법으로제조된실리카입자가갖는모양의불규칙성과크기의제한성등을개선시킨상용화된실리카입자를성장핵으로한 웨이퍼폴리싱용실리카슬러리의제조방법에관한것이다. 본발명의목적은비교적가격이저렴하고널리상용화되어있는열분해실리카와침전법으로제조된콜로이드실리카를성장핵으로사용하여 TEOS를물과가수분해·축중합반응을일으켜성장시킴으로써스토버(Stober) 방법의단점을극복하고, 다양한크기의성장핵을사용하고, 반응물의양을조절함으로써원하는크기의실리카입자를제조하여, 다양한형태의다양한크기와표면거칠기를갖는실리콘웨이퍼의표면을연마할수 있고, 차후의실제반도체공정의화학적·기계적연마공정에도사용가능한실리카슬러리를제조하는방법을제공함에있다. 본발명은이러한목적을달성하기위하여비교적가격이저렴하고널리상용화되어있는열분해실리카와콜로이드를성장핵으로사용하기위한전처리과정을거친후, 입자성장반응을통해서원하는크기의실리카입자를제조한다음, 제조된실리카입자분산매를알코올에서물로치환하고첨가제를사용한후 간단한후처리과정을거쳐웨이퍼폴리싱에사용될수 있는실리카슬러리를제조하는방법을채택하였다.