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公开(公告)号：KR101598779B1
公开(公告)日：2016-03-02
申请号：KR1020140142325
申请日：2014-10-21
Abstract: 본발명의일 실시예에따른나노다이오드는핫 전자기반나노다이오드이며, 광에의해핫 전자가생성및 증폭되는그래핀층; 그래핀층과쇼트키접합을이루는반도체층;을포함한다.
Abstract translation: 本发明提供一种对光敏感且具有优异的光能转换特性的纳米二极管。 此外，纳米二极管可以以低成本生产，从而具有商业潜力。 根据本发明的一个实施例，纳米二极管是基于热电子的纳米二极管。 热电子纳米二极管包括：石墨烯层，其中产生热电子并用光放大; 与石墨烯层形成肖特基结的半导体层; 与石墨烯层形成欧姆接触的第一电极; 以及与半导体层形成欧姆接触的第二电极。
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公开(公告)号：KR1020140031730A
公开(公告)日：2014-03-13
申请号：KR1020120098413
申请日：2012-09-05
Applicant: 한국과학기술원
IPC: C01G23/047 , B82B1/00 , B82B3/00
CPC classification number: C23F1/02 , B82Y30/00 , B82Y40/00 , C23C14/083 , C23C14/3464 , C23C14/5873 , C23C18/1216 , C23C18/122 , C23C18/1254 , Y10T428/24355
Abstract: The present invention relates to a method for adjusting the wettability of a titanium dioxide layer against water by increasing the hydrophilic property of the titanium dioxide layer by nanostructuring the titanium dioxide layer and increasing the hydrophobic property of the titanium dioxide layer by coating the nanostructured titanium dioxide layer with a silane layer. The method for adjusting the wettability of a titanium dioxide layer against water according to the present invention comprises the steps of: (a) forming a titanium dioxide layer on a substrate; (b) forming a silica particle layer on the upper part of the titanium dioxide layer; (c) etching a surface of the laminate manufactured in step (b); and (d) forming a nanostructured titanium dioxide layer by removing the silica particle layer remaining after etching in step (c).
Abstract translation: 本发明涉及一种通过纳米二氧化钛层增加二氧化钛层的亲水性，并通过涂覆纳米结构二氧化钛来提高二氧化钛层的疏水性，从而调节二氧化钛层对水的润湿性的方法 层与硅烷层。 根据本发明的调节二氧化钛层对水的润湿性的方法包括以下步骤：（a）在基材上形成二氧化钛层; （b）在二氧化钛层的上部形成二氧化硅粒子层; （c）蚀刻步骤（b）中制造的层压板的表面; 和（d）通过除去步骤（c）中的蚀刻后残留的二氧化硅颗粒层，形成纳米结构二氧化钛层。
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公开(公告)号：KR1020130132035A
公开(公告)日：2013-12-04
申请号：KR1020120056097
申请日：2012-05-25
Applicant: 한국과학기술원
IPC: H01L29/861 , H01L31/042
CPC classification number: Y02E10/542 , H01L31/042 , H01L29/861
Abstract: The present invention relates to a stacked metal-semiconductor nanodiode having a lamination structure where a first semiconductor layer is formed on a metal and a second semiconductor layer is formed on the metal, and a solar cell using the same. The stacked metal-semiconductor nanodiode of the present invention effectively absorbs different optical energy and the optical energy coming from multidirection by laminating two semiconductor layers in both directions of the metal, minimizes energy loss, and amplifies energy conversion efficiency. Therefore, the stacked metal-semiconductor nanodiode of the present invention minimizes the loss of optical energy and improves photoelectric transformation efficiency. [Reference numerals] (101) First semiconductor layer;(102) Metal (thin film-type nano structure);(103) Second semiconductor layer
Abstract translation: 本发明涉及具有叠层结构的叠层金属 - 半导体纳米二极管，其中在金属上形成第一半导体层，在金属上形成第二半导体层，以及使用该层叠结构的太阳能电池。 本发明的叠层金属 - 半导体纳米二极管通过在金属的两个方向上层压两个半导体层来有效地吸收不同的光能和来自多方向的光能，使能量损失最小化，并且放大能量转换效率。 因此，本发明的叠层金属 - 半导体纳米二极管使光能的损失最小化并提高光电转换效率。 （101）第一半导体层;（102）金属（薄膜型纳米结构）;（103）第二半导体层
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公开(公告)号：KR1020120129242A
公开(公告)日：2012-11-28
申请号：KR1020110047377
申请日：2011-05-19
Applicant: 한국과학기술원
Abstract: PURPOSE: Hot electron based metal semiconductor nanodiode photocatalytic devices are provided to control the activity of reaction according to energy gap by controlling hot electrons. CONSTITUTION: A photocatalytic activity layer includes a white gold film layer and a gold thin film layer. The photocatalytic activity layer activates optical catalytic reaction. Organometallic compound includes Pt, Pd, Ni, Co, Fe and Mn. Transition metal complex includes Fe, Co, and Zn and Mn. The photocatalytic activity layer forms a charge transport layer and a Schottky diode.
Abstract translation: 目的：提供热电子基金属半导体纳米二极管光催化器件，通过控制热电子来控制反应活性。 构成：光催化活性层包括白金膜层和金薄膜层。 光催化活性层激活光催化反应。 有机金属化合物包括Pt，Pd，Ni，Co，Fe和Mn。 过渡金属络合物包括Fe，Co和Zn和Mn。 光催化活性层形成电荷传输层和肖特基二极管。
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公开(公告)号：KR1020130132353A
公开(公告)日：2013-12-04
申请号：KR1020130129251
申请日：2013-10-29
Applicant: 한국과학기술원
IPC: H01L29/861 , H01L31/04
CPC classification number: Y02E10/542 , H01L31/04 , H01L29/861
Abstract: The present invention relates to a stacked metal-semiconductor nanodiode having a lamination structure where a first semiconductor layer is formed on a metal and a second semiconductor layer is formed on the metal, and a solar cell using the same. According to the present invention, a stacked metal-semiconductor nanodiode minimizes energy loss and amplifies energy conversion efficiency by absorbing different light energy in multiple directions by laminating two semiconductor layers on both sides of the metal. Therefore, the present invention improves light conversion efficiency and minimizes the loss of light energy by using a metal-semiconductor nanodiode. [Reference numerals] (101) First semiconductor layer;(102) Metal (thin film-type nano structure);(103) Second semiconductor layer
Abstract translation: 本发明涉及具有叠层结构的叠层金属 - 半导体纳米二极管，其中在金属上形成第一半导体层，在金属上形成第二半导体层，以及使用该层叠结构的太阳能电池。 根据本发明，堆叠的金属 - 半导体纳米二极管通过在金属的两侧层叠两个半导体层，通过在多个方向吸收不同的光能来最小化能量损失并放大能量转换效率。 因此，本发明通过使用金属 - 半导体纳米二极管来提高光转换效率并使光能损失最小化。 （101）第一半导体层;（102）金属（薄膜型纳米结构）;（103）第二半导体层
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Patent Agency Ranking
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公开(公告)号：KR1020160050632A
公开(公告)日：2016-05-11
申请号：KR1020140149215
申请日：2014-10-30
IPC: H01L31/06 , H01L31/042
CPC classification number: Y02E10/50 , H01L31/102 , H01L31/06 , H01L31/107
Abstract: 본발명은상기제1금속층의일함수보다작은일함수를갖는제2금속층; 및상기제1금속층의일함수및 제2금속층의일함수보다작은전자친화도를갖는무기층;을포함하며, 상기무기층을사이에두고, 상기제1금속층과상기제2금속층이적층되어, 상기제1금속층의핫 전자가상기무기층을터널링하여상기제2금속층으로이동하는에너지소자에관한것이다.
Abstract translation: 本发明的目的是提供具有优异的能量转换效率的具有新颖结构的能量装置，可以通过简单，低成本的方法制造，并且可以长期稳定地使用。 能量器件包括：第一金属层，其中通过表面等离子共振（SPR）产生并放大热电子; 第二金属层，其功函数小于第一金属层的功函数; 以及无机层，其具有小于第一金属层的功函数和第二金属层的功函数的电子亲和力，其中第一金属层和第二金属层被层叠，其间插入无机层，因此 第一金属层的热电子穿过无机层隧道移动到第二金属层。
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公开(公告)号：KR101447531B1
公开(公告)日：2014-10-08
申请号：KR1020120098413
申请日：2012-09-05
Applicant: 한국과학기술원
IPC: C01G23/047 , B82B1/00 , B82B3/00
CPC classification number: C23F1/02 , B82Y30/00 , B82Y40/00 , C23C14/083 , C23C14/3464 , C23C14/5873 , C23C18/1216 , C23C18/122 , C23C18/1254 , Y10T428/24355
Abstract: 본 발명은 이산화티탄층을 나노구조화하여 이산화티탄층의 친수성을 높이고 또한 나노구조화된 이산화티탄층을 실란층으로 코팅하여 이산화티탄층의 소수성을 높임으로써 이산화티탄층의 물에 대한 습윤성을 조정하는 방법에 관한 것이다.
본 발명의 이산화티탄층의 물에 대한 습윤성을 조정하는 방법은, a) 기판 상에 이산화티탄층을 형성하는 단계; b) 상기 이산화티탄층 상부에 실리카 입자층을 형성하는 단계; c) 상기 b)단계에서 제조된 적층체의 표면을 에칭시키는 단계; 및 d) 상기 c)단계에서 에칭되고 잔류된 실리카 입자층을 제거하여 나노구조화된 이산화티탄층을 형성하는 단계를 포함하는 것을 특징으로 한다.-
公开(公告)号：KR101430937B1
公开(公告)日：2014-08-19
申请号：KR1020120067369
申请日：2012-06-22
Applicant: 한국과학기술원
IPC: H01L31/06 , H01L31/042
CPC classification number: Y02E10/50
Abstract: 본 발명은 반도체층 위에 금속이 적층되고, 상기 금속 위에 p/n형 유기/무기 반도체층이 적층된 구조를 갖는 나노다이오드 및 이를 포함하는 태양전지에 관한 것으로, 본 발명의 나노다이오드는 금속이 그 금속 위에 적층된 p/n형 유기/무기 반도체층(제1광흡수층)의 후면 전극역할을 하면서 동시에 상기 제1광흡수층에서 흡수되지 못한 빛을 다시 흡수하는 제2광흡수층으로 이용된다. 이때 핫 전자의 생성과 검출 원리를 이용하기 위해 후면 전극 밑에 증착되어 있는 반도체층이 후면 전극인 금속과 반도체층 사이에 생성된 쇼트키 장벽을 통해 금속에서 생성되는 핫 전자를 효율적으로 수집하게 되고, 뿐만 아니라 최종적으로 반도체층은 직접적인 광흡수를 수행함으로써 나노다이오드의 광흡수 전환 효율을 극대화시킬 수 있다.
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公开(公告)号：KR1020140003682A
公开(公告)日：2014-01-10
申请号：KR1020120067369
申请日：2012-06-22
Applicant: 한국과학기술원
IPC: H01L31/06 , H01L31/042
CPC classification number: Y02E10/50 , H01L31/042 , H01L31/06
Abstract: The present invention relates to a nonodiode having the structures of laminating metal on a semiconductor layer and laminating a p/n type organic/inorganic semiconductor layer on the metal, and to a solar cell comprising the same. According to the nanodiode of the present invention, the metal is functioned as a rear electrode of the p/n type organic/inorganic semiconductor layer (first optical absorption layer) laminated on the metal while being used as a second optical absorption layer for re-absorbing the light which is not absorbed in the first optical absorption layer. Wherein, the semiconductor layer deposited under the rear electrode efficiently collects the hot electron generated in the metal through a Schottky barrier generated between the metal which is the rear electrode and the semiconductor layer to use the principles of generating and detecting the hot electron, and the semiconductor layer finally performs the direct optical absorption, thereby maximizing the optical absorption conversion efficiency of the nanodiode. [Reference numerals] (101) Semiconductor layer; (102) Metal; (104) Glass substrate; (AA) P Organic/Inorganic; (BB) N Organic/Inorganic
Abstract translation: 本发明涉及具有将金属层叠在半导体层上并在该金属上层压p / n型有机/无机半导体层的结构的非二极管，以及包含该金属的太阳能电池。 根据本发明的纳米二极管，金属作为层叠在金属上的p / n型有机/无机半导体层（第一光吸收层）的背面电极发挥功能，同时用作第二光吸收层， 吸收未吸收在第一光吸收层中的光。 其中，沉积在后电极下的半导体层通过在作为后电极的金属和半导体层之间产生的肖特基势垒而有效地收集在金属中产生的热电子，以利用产生和检测热电子的原理， 半导体层最终执行直接光吸收，从而最大化纳米二极管的光吸收转换效率。 （101）半导体层; （102）金属; （104）玻璃基板; （AA）P有机/无机; （BB）N有机/无机
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