BaTiO₃(Barium Titanate)계 유전체의제조방법
    1.
    发明公开
    BaTiO₃(Barium Titanate)계 유전체의제조방법 失效
    制备BATIO3(BARIUMTITANATE)组电介质的方法

    公开(公告)号:KR1020010086912A

    公开(公告)日:2001-09-15

    申请号:KR1020000010895

    申请日:2000-03-04

    CPC classification number: H01G4/1227 C04B35/4682 C04B35/626

    Abstract: PURPOSE: A method for fabricating a BaTiO3(Barium Titanate) group dielectric is provided to offer a BaTiO3(Barium Titanate) group dielectric having a high dielectric constant and a low dielectric loss by making a smaller average particle size and increasing a relative density. CONSTITUTION: A method for fabricating a BaTiO3(Barium Titanate) group dielectric performs a wet mixing operation on a powder over-mixed by a BaTiO3 powder and Tio2 by 0.4mol with a ZrO2 ball by means of an alcoholic solvent during 12-48 hours, and a dry grinding operation on it in 100°C-150°C during 6-36 hours, a grind sieving operation on it, pours out it into a metal mold, molds it, and performs a cold isostatic press(CIP) molding operation on it with a pressure of 170-230MPa. And the method for fabricating a BaTiO3(Barium Titanate) group dielectric performs an electrothermal process on it in a hydrogen(H2) atmosphere by 1220°C-1280°C or a dioxidizing atmosphere of a mixing gas which is hydrogen(H2):nitrogen(N)=5-100:0-95, during 2-15 hours, and then sinters it in 1320°C-1380°C during 2-100 hours, preferably during 5-48 hours, in air atmosphere.

    Abstract translation: 目的:提供一种制造BaTiO 3(钛酸钡)基电介质的方法,通过使平均粒径更小并提高相对密度,提供具有高介电常数和低介电损耗的BaTiO3(钛酸钡)组电介质。 构成:制造BaTiO 3(钛酸钡)基团电介质​​的方法,通过BaTiO 3粉末和Tio2用ZrO 2球,通过醇溶剂在12-48小时内用0.4摩尔过度混合的粉末进行湿式混合操作, 并在6-36小时内在100℃-150℃下对其进行干式研磨操作,对其进行研磨操作,将其倒入金属模具中,对其进行成型,并进行冷等静压(CIP)成型操作 压力170-230MPa。 并且制备BaTiO 3(钛酸钡)基电介质的方法在氢(H 2)气氛中在1220℃-1280℃下进行电热处理,或者在氢气(H 2):氮气混合气体的二氧化气氛中进行电热处理 (N)= 5-100:0-95,在2-15小时内,然后在空气气氛中在1320℃-1380℃下烧结2-100小时,优选5-48小时。

    BaTiO₃(Barium Titanate)계 유전체의제조방법
    2.
    发明授权
    BaTiO₃(Barium Titanate)계 유전체의제조방법 失效
    BaTiO 3(钛酸钡)介质材料的制备方法

    公开(公告)号:KR100329126B1

    公开(公告)日:2002-03-21

    申请号:KR1020000010895

    申请日:2000-03-04

    Abstract: 본 발명은 높은 유전상수와 낮은 유전손실을 가지는 BaTiO
    3 유전체의 제조방법에 관한 것으로 보다 상세하게는 유전체 제조공정중 소결공정 전에 환원성 분위기에서 전열처리를 통하여 BaTiO
    3 의 평균입자크기를 작게 함으로써 높은 유전상수와 낮은 유전손실을 가지는 BaTiO
    3 유전체의 제조방법에 관한 것이다.
    본 발명은 순수한 BaTiO
    3 뿐만 아니라 어떠한 첨가물이 첨가되더라도 BaTiO
    3 를 소결전에 액상형성온도 이하 환원성 분위기에서 간단한 열처리를 통하여 평균입자크기가 매우 작고 상대밀도가 큰 소결체를 얻을 수 있다는 큰 장점을 가지고 있다.

    표면개질된 알루미나계 세라믹스와 그 제조방법
    3.
    发明授权
    표면개질된 알루미나계 세라믹스와 그 제조방법 失效
    表面改性氧化铝基陶瓷及其制造方法

    公开(公告)号:KR100329120B1

    公开(公告)日:2002-03-21

    申请号:KR1019990013582

    申请日:1999-04-16

    Abstract: 본발명은알루미나계소결체를소결분위기보다산소분압이높은분위기에서열처리함으로써표면개질층을형성하는공정과그에의하여표면개질된알루미나계단상, 복합세라믹스에관한것이다. 본발명에서밝혀낸표면개질알루미나계세라믹스의제조방법은 Fe 등의첨가제를포함하는분말성형체를상대적으로산소분압이낮은분위기(N, 95N-5H, H등)에서소결한후 그보다산소분압이높은분위기(80N-20O, O등)에서열처리하는공정으로이루어진다. 이에의하면알루미나계재료의표면에휘어진입계구조를가지는입계이동층을형성시킴으로써, 미세균열영역에서의인성을증진시킬수 있고또한비교적간단한열처리공정만을추가하여기존의알루미나세라믹스제조라인에적용하여제품을생산할수 있는효과가있다.

    표면개질된 알루미나계 세라믹스와 그 제조방법
    4.
    发明公开
    표면개질된 알루미나계 세라믹스와 그 제조방법 失效
    表面修饰的基于氧化铝的陶瓷及其制备

    公开(公告)号:KR1020000066471A

    公开(公告)日:2000-11-15

    申请号:KR1019990013582

    申请日:1999-04-16

    CPC classification number: C04B35/10 C04B35/62645 C04B2235/3272 C04B2235/658

    Abstract: PURPOSE: A surface modified alumina-based ceramics and preparation thereof are provided, which increase short-crack toughness and adapt to a conventional ceramic manufacture line by adding a simple heat-treating process. CONSTITUTION: The surface modified alumina-based ceramics are produced by sintering Al2O3 formed body containing Fe whose content is 0.01-20 wt.% of Al2O3, being calculated in terms of Fe2O3, in a lower O2 partial pressure atmosphere(N2, 95N2-5H2, H2, etc.), followed by heat-treating at 1000-1600°C for a few min-hrs. in a higher O2 partial pressure atmosphere(80N2-20O2, O2) than that of sintering.

    Abstract translation: 目的:提供一种表面改性氧化铝基陶瓷及其制备方法,通过添加简单的热处理工艺,可提高短裂纹韧性,适应传统陶瓷生产线。 构成:表面改性氧化铝基陶瓷通过在低O2分压气氛(N 2,95 N 2 -5 H 2)中烧结含Fe为0.01-20重量%的Al 2 O 3的Al 2 O 3成形体,按Fe 2 O 3计算 ,H 2等),然后在1000-1600℃下热处理几分钟。 在较高的O2分压气氛(80N2-20O2,O2)比烧结。

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