Abstract:
A wide-band low-noise amplifier using a current mirror is provided to perform a positive current feedback operation by using the current mirror. First and second common gate amplifiers(500,510) convert input signals of first and second input terminals to current. First and second common source amplifiers(520,530) amplify output signals of the first and second common gate amplifiers and output the amplified output signals to first and second output terminals. First and second current mirrors(540,550) supply the current to the first and second common source amplifiers according to the current applied to the first and second common gate amplifiers and feeds back the forward current to the second and first input terminals.
Abstract:
디지털 논데시메이션 필터에 관한 것으로서, 연속 펄스를 이용하여 필터 탭이 구성된 논데시메이션 필터에 관한 것이다. 실시예에 따른 필터 회로는 하나 이상의 필터 유닛을 포함하고, 필터 유닛의 각각은 캐패시터를 포함하고, 필터 유닛은 디지털 전류 신호를 입력받아 필터 계수에 기초하여 캐패시터에 전류 신호를 캐패시터에 충전 시키고, 출력 펄스 신호에 동기화하여 충전된 캐패시터의 전압을 출력한다. 실시예에 따른 필터 회로에서, 필터 유닛의 각각은, 캐패시터와 디지털 전류 신호의 입력 사이에 위치한 제 1 스위치; 캐패시터와 출력 사이에 위치한 제 2 스위치를 더 포함하고, 제 1 스위치는 필터 계수에 기초하여 스위칭되고, 제 2 스위치는 출력 펄스 신호에 기초하여 스위칭되고, 캐패시터의 일 단은 제 1 스위치 및 제 2 스위치에 연결이 되고, 캐패시터의 다른 단은 그라운드에 연결이 되는 것이 바람직하다.
Abstract:
The present invention relates to a radio frequency (RF) distortion signal measurement device for measuring an output distortion signal of a power amplifier, a wireless power amplification device including the same, and an RF distortion signal measurement method. The RF distortion signal measurement device for measuring an output distortion signal of a power amplifier having non-linear characteristics comprises a multiplier multiplying an output signal of the power amplifier by an input signal of the power amplifier; and a filter filtering the output signal of the multiplier.
Abstract:
PURPOSE: A method for manufacturing a flexible device and the flexible device are provided to maintain a flexible substrate with a high alignment by bonding the flexible device to the flexible substrate after the flexible device is manufactured on a silicon substrate. CONSTITUTION: A silicon-on-insulator includes a bottom silicon layer, an insulation layer (200), and a top silicon layer (100). A device (300) is arranged on the top silicon layer. A second silicon substrate is bonded to the top silicon layer through a bonding layer. The bottom silicon layer is removed. The top silicon layer is transferred on a flexible substrate (600) by using the second silicon substrate. A passivation layer is laminated on the flexible substrate.
Abstract:
PURPOSE: A low noise amplifier and a radio receiver are provided to greatly improve linearity by using the body biasing and complementary superposition of a transistor. CONSTITUTION: A low noise amplifier is composed of a complementary common source low noise amplifier(100) linearized. The linearized complementary common source low noise amplifier comprises a first primary transistor part(110), a first subsidiary transistor part(120), and a capacitor(130) for simultaneously matching optimal noise and input impedance. The first primary transistor part comprises a first NMOS(N-Channel Metal Oxide Semiconductor) transistor, a first PMOS(P-Channel Metal Oxide Semiconductor) transistor, and resistance. The first subsidiary transistor part includes a first NMOS transistor of the first primary transistor part and transistors parallely connected to the first PMOS transistor. The capacitor for simultaneous matching is communally connected to output terminals of the first primary transistor part and the first subsidiary transistor part.