公开(公告)号：KR100437264B1

公开(公告)日：2004-06-23

申请号：KR1020010039130

申请日：2001-06-30

Applicant: 한국과학기술원

Inventor： 이대길 ,  장승환 ,  김진국 ,  임태성 ,  김일영 ,  최진경 ,  임진현

IPC: H01L21/02

Abstract: PURPOSE: A dummy wafer and a method for fabricating the same are provided to improve stiffness and toughness of the dummy wafer by simplifying a fabricating process of the dummy wafer. CONSTITUTION: A complex material is stacked on a metal film of a predetermined size in order to obtain mutual isotropy(S110). A mold is pressed on an exposed of the complex material(S120). The mold, the complex material, and metal film are packed with a vacuum bag, a vacuum state is formed in the inside of the vacuum bag, and the vacuum bag is loaded into an autoclave(S130). The mold is printed on the complex material by increasing temperature and pressure of the autoclave and an adhesive resin is hardened by performing a heating process(S140). The complex material and the metal film are removed from the metal and a dummy wafer is formed by performing a cutting process(S150). Nickel or cooper is plated on a surface of the dummy wafer(S160).

Abstract translation: 目的：提供一种伪晶片及其制造方法，以通过简化伪晶片的制造工艺来提高伪晶片的刚性和韧性。 构成：将复合材料堆叠在预定尺寸的金属膜上以获得相互各向同性（S110）。 在复合材料露出的状态下按压模具（S120）。 将模具，复合材料和金属膜用真空袋包装，在真空袋内部形成真空状态，并将真空袋装入高压釜（S130）。 通过升高高压釜的温度和压力将模具印刷在复合材料上，并且通过执行加热过程使粘合剂树脂硬化（S140）。 从金属上去除复合材料和金属膜，并通过执行切割工艺形成伪晶片（S150）。 将镍或铜电镀在伪晶片的表面上（S160）。

公开(公告)号：KR1020030003393A

公开(公告)日：2003-01-10

申请号：KR1020010039130

申请日：2001-06-30

Applicant: 한국과학기술원

Inventor： 이대길 ,  장승환 ,  김진국 ,  임태성 ,  김일영 ,  최진경 ,  임진현

IPC: H01L21/02

Abstract: PURPOSE: A dummy wafer and a method for fabricating the same are provided to improve stiffness and toughness of the dummy wafer by simplifying a fabricating process of the dummy wafer. CONSTITUTION: A complex material is stacked on a metal film of a predetermined size in order to obtain mutual isotropy(S110). A mold is pressed on an exposed of the complex material(S120). The mold, the complex material, and metal film are packed with a vacuum bag, a vacuum state is formed in the inside of the vacuum bag, and the vacuum bag is loaded into an autoclave(S130). The mold is printed on the complex material by increasing temperature and pressure of the autoclave and an adhesive resin is hardened by performing a heating process(S140). The complex material and the metal film are removed from the metal and a dummy wafer is formed by performing a cutting process(S150). Nickel or cooper is plated on a surface of the dummy wafer(S160).

Abstract translation: 目的：提供一种虚设晶片及其制造方法，通过简化伪晶片的制造工艺来提高虚设晶片的刚度和韧性。 构成：为了获得各向同性，复合材料层叠在预定尺寸的金属膜上（S110）。 将模具压在复合材料的暴露部分上（S120）。 模具，复合材料和金属膜用真空袋包装，真空袋内部形成真空状态，将真空袋装入高压釜（S130）。 通过增加高压釜的温度和压力将模具印刷在复合材料上，并通过进行加热处理使粘合剂树脂硬化（S140）。 复合材料和金属膜从金属中除去，通过进行切割处理形成虚设晶片（S150）。 将镍或铜电镀在虚设晶片的表面上（S160）。