公开(公告)号：KR1020100136185A

公开(公告)日：2010-12-28

申请号：KR1020090054414

申请日：2009-06-18

Applicant: 한국과학기술원

Inventor： 김봉수 ,  한솔

IPC: B82B3/00 ,  B82B1/00

CPC classification number: B22F9/28 ,  B22F5/12 ,  B22F2301/255 ,  B22F2304/054 ,  B82Y30/00 ,  B82Y40/00

Abstract: PURPOSE: A method for fabricating twin-free single crystalline Ag nano-wire is provided to crystallographically make the surface using a vapor-phase transport process which does not use catalyst and organic/inorganic mold. CONSTITUTION: A method for fabricating twin-free single crystalline Ag nano-wire comprises the steps of: vaporizing Ag precursor and transferring the vaporized Ag to a mono crystal substrate through inert gas; forming Ag seeds with an epitaxial relation to the substrate on the mono crystal substrate, wherein the Ag seeds are composed of {001} and {111} planes; and preparing a single crystalline Ag nanowire including no two dimensional plane defects.

Abstract translation: 目的：提供一种制造双自由单晶Ag纳米线的方法，以使用不使用催化剂和有机/无机模具的气相传输方法在晶体学上制备表面。 构成：制造双相单晶Ag纳米线的方法包括以下步骤：蒸发Ag前体并通过惰性气体将蒸发的Ag转移到单晶基底; 在单晶衬底上形成与衬底的外延关系的Ag种子，其中Ag种子由{001}和{111}面组成; 并制备不包括二维平面缺陷的单晶Ag纳米线。

公开(公告)号：KR1020100116875A

公开(公告)日：2010-11-02

申请号：KR1020090035522

申请日：2009-04-23

Applicant: 한국과학기술원

Inventor： 김봉수 ,  한솔

IPC: B82B3/00 ,  H01L21/20 ,  B82Y40/00

CPC classification number: C30B19/00 ,  B22F5/12 ,  B22F2301/25 ,  B22F2304/054 ,  C30B29/02 ,  C30B29/62

Abstract: PURPOSE: A single-crystal twin-free noble metal nanowire and a manufacturing method thereof using noble metal halide are provided to control the orientation of the noble metal nanowire formed on a substrate by controlling the temperature of a precursor using the noble metal halide. CONSTITUTION: A manufacturing method of a single-crystal twin-free noble metal nanowire comprises the following steps: locating a noble metal halide as a precursor to the tip-end of a reactor and locating a mono crystal substrate on the rear side of the reactor; and heat processing the reactor from the tip-end to the rear side thereof under fixed pressure and inert gas, to form noble metal nanowires having an epitaxial relation with the substrate on the mono crystal substrate.

Abstract translation: 目的：提供使用贵金属卤化物的单晶无双贵金属纳米线及其制造方法，以通过使用贵金属卤化物控制前体的温度来控制形成在基板上的贵金属纳米线的取向。 构成：单晶双金属贵金属纳米线的制造方法包括以下步骤：将贵金属卤化物作为前体定位在反应器的前端，并将单晶基板定位在反应器的后侧 ; 并且在固定压力和惰性气体下，从反应器的顶端到后侧进行热处理，以形成与单晶衬底上的衬底具有外延关系的贵金属纳米线。