公开(公告)号：KR101051083B1

公开(公告)日：2011-07-21

申请号：KR1020100091075

申请日：2010-09-16

Applicant: 한국기계연구원

Inventor： 정소희 ,  장원석 ,  한창수 ,  백승재

IPC: H01B5/14 ,  H01L31/10 ,  H01L31/04 ,  C09K11/08

CPC classification number: Y02E10/50

Abstract: PURPOSE: A highly conductive quantum dot film provides electric component improving performance by reducing a surface defect according to change the surface of the film. CONSTITUTION: A conductivity quantum dot is manufactured. The conductivity quantum dot is coated in substrate. The ligand between the conductivity quantum dot is exchanged. The substrate in which the conductivity quantum dot is coated is treated by heating to the temperature of 40~70°C in the inert atmosphere. The substrate which is treated by heating is changed to the ligand.

Abstract translation: 目的：高导电量子点膜通过根据膜表面的变化减少表面缺陷而提供电气元件改进性能。 构成：制造导电量子点。 导电量子点被涂覆在基片中。 交换电导量子点之间的配体。 通过在惰性气氛中加热至40〜70℃的温度，对其中涂布导电量子点的基板进行处理。 通过加热处理的基板改变为配体。