Abstract:
PURPOSE: A milling method of a silicon carbide material is provided to improve a sinterability of a silicon carbide powder by controlling a milling atmosphere while manufacturing Si and C to the silicon carbide material powder through the high energy milling. CONSTITUTION: A milling method of a silicon carbide material comprises the following steps. A milling atmosphere is maintained as a state of vacuum while changing a raw material which includes Si and C to the silicon carbide through a planetary milling. An oxygen content of the silicon carbide which is obtained by milling in the vacuum is less than the oxygen content of the silicon carbide which is obtained in the air under the milling condition which is same with the milling condition in the vacuum. A molded product of the silicon carbide powder which is obtained by milling in the vacuum has the high sintered density at more than 2000°C of the sintering temperature. The molded product of the silicon carbide powder which is obtained by milling in the vacuum maintains the low sintering temperature in the constant sintered density.
Abstract:
PURPOSE: A mold for mass synthesis of ceramic powder by spark plasma sintering is provided to uniformly mass synthesize ceramic powder by forming a plurality of pipes in which material powder is loaded. CONSTITUTION: A mold for mass synthesis of ceramic powder by spark plasma sintering comprises a body(101) which includes more than two pipes in which material powder is loaded and a pair of metal covers(102,103) which are respectively in contact with top and bottom parts of the body. The amount of raw material for the sintering of spark plasma is controlled by adjusting the height of the mold. Amounts of current and voltage for powder synthesis are minimized by forming one or more processing portions between the pipes so that the cross section of the mold body can be reduced. The peripheral or inner circumferential part of the cross section of the body has either a circular, ellipsoid, or polygonal shape.
Abstract:
본 발명은 반응소결 탄화규소계 분쇄소재의 수명연장 및 내마모성 회복 방법 및 이에 의한 반응소결 탄화규소계 분쇄소재에 관한 것으로, 보다 상세하게는 상기 탄화규소계 분쇄소재를 사용하여 분말을 분쇄하는 단계; 상기 분말을 분쇄하는 단계에서 사용된 탄화규소계 분쇄소재를 열처리하는 단계;를 포함하여 구성되며, 상기 탄화규소계 분쇄소재는 반응소결방법에 의해 제조된 것임을 특징으로 하는 반응소결 탄화규소계 분쇄소재의 수명연장 및 내마모성 회복 방법 및 이에 의한 반응소결 탄화규소계 분쇄소재를 제공한다. 본 발명에 의하면 세라믹, 금속, 고분자 등의 분말 재료를 분쇄할 때, 분쇄소재로부터 불순물이 유입되는 것을 방지하거나 최소화할 수 있다.
Abstract:
본 발명은 스파크 플라즈마 소결에 의한 세라믹 분말 대량 합성용 금형에 관한 것으로서, 보다 상세하게는 금형 몸체에 세라믹 분말 합성을 위한 원료분말이 장입되는 관체를 두 개 이상 형성시키며, 상기 금형 몸체를 높이 방향으로 확장하고, 금형 단면적이 최소화되도록 설계된 스파크 플라즈마 소결에 의한 세라믹 분말 합성용 금형을 제공함으로써, 종래의 단일 관체를 구비하는 금형 시스템에 비하여 1회 생산 가능한 분말의 양을 크게 증가시킬 수 있으며, 종래의 금형 시스템에서 인가되는 값에 비하여 낮은 전력을 가함으로써 금형 가열온도를 낮춤에도 불구하고 효과적으로 분말합성이 이루어질 수 있으며, 따라서 기존의 방법보다 더 미세한 분말을 합성할 수 있게 되는 효과가 기대된다.
Abstract:
PURPOSE: A lifetime extension and abrasion resistance recovering method of a reaction-bonded silicon carbide (RBSC) based grinding medium is provided to prevent the contamination of non-ground material powder by the grinding of the RBSC based grinding medium by heat processing the RBSC based grinding medium in a specific temperature range. CONSTITUTION: A lifetime extension and abrasion resistance recovering method of an RBSC based grinding medium comprises the following steps: grinding powder using the RBSC based grinding medium; and heat-processing the RBSC based grinding medium at 950-1,350°C. The RBSC based grinding medium is obtained by a reaction bonding method. The RBSC based grinding medium is a composite of silicon and silicon carbide which uses silicon as a base and silicon carbide as a dispersing material.