-
公开(公告)号:KR101866348B1
公开(公告)日:2018-06-12
申请号:KR1020160180949
申请日:2016-12-28
Applicant: 한국에너지기술연구원
IPC: H01L31/0236 , H01L31/18
CPC classification number: Y02E10/50 , Y02P70/521 , H01L31/02363 , H01L31/1804
Abstract: 본발명은태양전지에관한것으로서, 더상세하게는수소헬륨공동주입(implantation)으로실리콘웨이퍼에수소,헬륨이온을주입하고열처리를수행함으로써실리콘웨이퍼상에전파되는크랙에따라태양전지를텍스쳐링하여박형실리콘기판을제조하는방법에대한것이다.
-
2.
公开(公告)号:KR101054893B1
公开(公告)日:2011-08-05
申请号:KR1020110020982
申请日:2011-03-09
Applicant: 한국에너지기술연구원
CPC classification number: Y02E10/50 , B22D11/045 , C30B11/006
Abstract: PURPOSE: An apparatus for manufacturing a silicon substrate using a spin casting process and a method for manufacturing the silicon substrate using the same are provided to easily control the thickness and the shaft of the silicon substrate without a separate shaping unit. CONSTITUTION: A chamber(110) arranges a sealed space. A storing container(122) is arranged in the chamber, and a raw silicon material is introduced in the storing container. A discharging hole is formed at the bottom side of the storing container. A melting part(120) is arranged around the storing container and includes a heater melting the raw silicon material. A casting part(140) spin-casts the melted silicon from the discharging hole. A cooling part(160) cools the spin-cased silicon. A temperature measuring part(180) measures the temperature of the melting part.
Abstract translation: 目的:提供一种使用旋转铸造工艺制造硅衬底的装置和使用其的制造硅衬底的方法,以便容易地控制硅衬底的厚度和轴,而无需单独的成形单元。 构成:室(110)布置密封空间。 储存容器(122)布置在室中,原料硅材料被引入存储容器中。 在储存容器的底侧形成有排出孔。 熔化部分(120)围绕储存容器设置,并且包括熔化原料硅的加热器。 铸造部件(140)将来自排出孔的熔融硅旋转铸造。 冷却部件(160)冷却旋转硅。 温度测量部件(180)测量熔化部件的温度。
-