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公开(公告)号：KR100464007B1
公开(公告)日：2005-01-03
申请号：KR1020020025366
申请日：2002-05-08
IPC: H01J1/30
Abstract: PURPOSE: A metal-insulator-metal emitter and a method for manufacturing the same are provided to reduce procedures and shorten the process time, while achieving improved characteristics. CONSTITUTION: A method for manufacturing a metal-insulator-metal emitter comprises the steps of forming a first electrode on a substrate; forming an insulating film on the first electrode through an atomic layer deposition; and forming a second electrode on the insulating film. The step of forming the insulating film includes a first step(S101) of disposing the substrate with the first electrode in a chamber; a second step(S103) of injecting a carrier gas and trimethyl aluminum in the chamber; a third step(S105) of removing the residual particles by injecting nitrogen or inert gas; a fourth step(S107) of forming an aluminum oxide thin film by injecting water or ozone for surface chemical reaction between the water and the trimethyl aluminum; and a fifth step(S109) of removing the residual particles by injecting nitrogen or inert gas.
Abstract translation: 目的：提供一种金属 - 绝缘体 - 金属发射体及其制造方法，以减少程序并缩短处理时间，同时实现改进的特性。 构成：用于制造金属 - 绝缘体 - 金属发射体的方法包括以下步骤：在衬底上形成第一电极; 通过原子层沉积在第一电极上形成绝缘膜; 以及在绝缘膜上形成第二电极。 形成绝缘膜的步骤包括：第一步骤（S101），将具有第一电极的基板布置在腔室中; 第二步骤（S103），在腔室中注入载气和三甲基铝; 通过注入氮气或惰性气体除去残留颗粒的第三步骤（S105） 第四步骤（S107），通过注入水或臭氧以形成氧化铝薄膜，用于水和三甲基铝之间的表面化学反应; 和通过注入氮气或惰性气体除去残留颗粒的第五步骤（S109）。
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公开(公告)号：KR100452331B1
公开(公告)日：2004-10-12
申请号：KR1020020062752
申请日：2002-10-15
Applicant: 한국전자통신연구원
IPC: H01J1/30
Abstract: PURPOSE: An MIM(Metal/Insulator/Metal) emitter of field emission display and a method for manufacturing the same are provided to deposit an etch stopper on a tunneling insulation film of an MIM emitter through a simple process method. CONSTITUTION: A method for manufacturing an MIM(Metal/Insulator/Metal) emitter of field emission display comprises a step of patterning a lower electrode(116) on a substrate(110), a step of forming a tunneling insulation film(120) and a field insulation film(118) on the lower electrode, a step of forming an etch stopper(123) made of a ZnO thin film on the field insulation film and the tunneling insulation film, a step of etching a protection layer(126), a bus electrode(124), and a contact electrode(122) by forming the contact electrode, the bus electrode, and the protecting layer in order, a step of wet-etching the etch stopper, the contact electrode, the bus electrode, and the protecting layer as a mask, and a step of forming an upper electrode(128) on the tunneling insulation film.
Abstract translation: 目的：提供场发射显示器的MIM（金属/绝缘体/金属）发射体及其制造方法，以通过简单的工艺方法在MIM发射体的隧穿绝缘膜上沉积蚀刻停止层。 用于制造场致发射显示器的MIM（金属/绝缘体/金属）发射体的方法包括在衬底（110）上构图下电极（116）的步骤，形成隧穿绝缘膜（120）的步骤和 在下电极上的场绝缘膜118，在场绝缘膜和隧穿绝缘膜上形成由ZnO薄膜制成的蚀刻阻挡层123的步骤，蚀刻保护层126的步骤， 通过依次形成所述接触电极，所述总线电极和所述保护层，对所述蚀刻阻止层，所述接触电极，所述总线电极和所述总线电极进行湿法蚀刻的步骤，以及总线电极（124）和接触电极（122） 保护层作为掩模，以及在隧穿绝缘膜上形成上电极（128）的步骤。
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公开(公告)号：KR1020030065262A
公开(公告)日：2003-08-06
申请号：KR1020020025366
申请日：2002-05-08
IPC: H01J1/30
Abstract: PURPOSE: A metal-insulator-metal emitter and a method for manufacturing the same are provided to reduce procedures and shorten the process time, while achieving improved characteristics. CONSTITUTION: A method for manufacturing a metal-insulator-metal emitter comprises the steps of forming a first electrode on a substrate; forming an insulating film on the first electrode through an atomic layer deposition; and forming a second electrode on the insulating film. The step of forming the insulating film includes a first step(S101) of disposing the substrate with the first electrode in a chamber; a second step(S103) of injecting a carrier gas and trimethyl aluminum in the chamber; a third step(S105) of removing the residual particles by injecting nitrogen or inert gas; a fourth step(S107) of forming an aluminum oxide thin film by injecting water or ozone for surface chemical reaction between the water and the trimethyl aluminum; and a fifth step(S109) of removing the residual particles by injecting nitrogen or inert gas.
Abstract translation: 目的：提供一种金属 - 绝缘体 - 金属发射器及其制造方法，以减少工艺并缩短工艺时间，同时实现改进的特性。 构成：制造金属 - 绝缘体 - 金属发射体的方法包括以下步骤：在衬底上形成第一电极; 通过原子层沉积在第一电极上形成绝缘膜; 以及在所述绝缘膜上形成第二电极。 形成绝缘膜的步骤包括：将具有第一电极的基板设置在室中的第一步骤（S101） 在所述室中注入载气和三甲基铝的第二步骤（S103） 通过注入氮气或惰性气体去除残留颗粒的第三步骤（S105）; 通过在水和三甲基铝之间注入水或臭氧进行表面化学反应形成氧化铝薄膜的第四步骤（S107）; 以及通过注入氮气或惰性气体除去残留颗粒的第五步骤（S109）。
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公开(公告)号：KR1020040033600A
公开(公告)日：2004-04-28
申请号：KR1020020062752
申请日：2002-10-15
Applicant: 한국전자통신연구원
IPC: H01J1/30
Abstract: PURPOSE: An MIM(Metal/Insulator/Metal) emitter of field emission display and a method for manufacturing the same are provided to deposit an etch stopper on a tunneling insulation film of an MIM emitter through a simple process method. CONSTITUTION: A method for manufacturing an MIM(Metal/Insulator/Metal) emitter of field emission display comprises a step of patterning a lower electrode(116) on a substrate(110), a step of forming a tunneling insulation film(120) and a field insulation film(118) on the lower electrode, a step of forming an etch stopper(123) made of a ZnO thin film on the field insulation film and the tunneling insulation film, a step of etching a protection layer(126), a bus electrode(124), and a contact electrode(122) by forming the contact electrode, the bus electrode, and the protecting layer in order, a step of wet-etching the etch stopper, the contact electrode, the bus electrode, and the protecting layer as a mask, and a step of forming an upper electrode(128) on the tunneling insulation film.
Abstract translation: 目的：提供场发射显示器的MIM（金属/绝缘体/金属）发射体及其制造方法，以通过简单的工艺方法在MIM发射器的隧道绝缘膜上沉积蚀刻停止层。 构成：用于制造场发射显示器的MIM（金属/绝缘体/金属）发射体的方法包括在衬底（110）上图形化下电极（116）的步骤，形成隧道绝缘膜（120）和 在所述下电极上的场绝缘膜（118），在所述场绝缘膜和所述隧道绝缘膜上形成由ZnO薄膜制成的蚀刻停止器（123）的步骤，蚀刻保护层（126）的步骤， 总线电极（124）和接触电极（122），通过依次形成接触电极，总线电极和保护层，湿法蚀刻蚀刻停止器，接触电极，总线电极和 保护层作为掩模，以及在隧道绝缘膜上形成上电极（128）的步骤。
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