公开(公告)号：KR1020110054863A

公开(公告)日：2011-05-25

申请号：KR1020090111657

申请日：2009-11-18

Applicant: 한국전자통신연구원 ,  주식회사 나노신소재

Inventor： 정승묵 ,  정우석 ,  유민기 ,  황치선 ,  조경익 ,  김상희 ,  박장우

IPC: H01B1/22 ,  H01B1/02 ,  H01L21/203

Abstract: PURPOSE: A transparent conductive film is provided to ensure stable specific resistivity and thermal stability by comprising titanium in indium tin oxide and tin oxide. CONSTITUTION: A transparent conductive film with excellent thermal stability comprises a mixture in which titanium is mixed with indium tin oxide and tin oxide. A method for preparing the transparent conductive film comprises the steps of: (S11) preparing raw material powders including an induim oxide powder or rare earth metal indium powder, tin oxide powder or metal tin powder, and titanium oxide powder or metal titanium powder as a main component; (S12) forming a transparent conductive film from the raw material powders using a sputtering apparatus; and (S13) heat-treating the formed transparent conductive film at a temperature of 300 °C or less.

Abstract translation: 目的：提供透明导电膜以通过在氧化铟锡和氧化锡中包含钛来确保稳定的电阻率和热稳定性。 构成：具有优异的热稳定性的透明导电膜包括其中钛与氧化铟锡和氧化锡混合的混合物。 制备透明导电膜的方法包括以下步骤：（S11）制备包含氧化铟粉末或稀土金属铟粉末，氧化锡粉末或金属锡粉末以及氧化钛粉末或金属钛粉末的原料粉末 主要成分; （S12）使用溅射装置从所述原料粉末形成透明导电膜; 和（S13）在300℃以下的温度对所形成的透明导电膜进行热处理。

公开(公告)号：KR101978835B1

公开(公告)日：2019-05-15

申请号：KR1020120027365

申请日：2012-03-16

Applicant: 한국전자통신연구원

Inventor： 정우석 ,  신재헌 ,  정승묵 ,  박장우 ,  김상희

IPC: H01L29/786 ,  H01L21/336

公开(公告)号：KR1020110073202A

公开(公告)日：2011-06-29

申请号：KR1020100052770

申请日：2010-06-04

Applicant: 한국전자통신연구원 ,  주식회사 나노신소재

Inventor： 정우석 ,  정승묵 ,  박장우 ,  김상희

IPC: C23C14/08 ,  C23C14/34 ,  C23C14/58

CPC classification number: C23C14/086 ,  C23C14/34 ,  C23C14/5806

Abstract: PURPOSE: A transparent conductive film and a manufacturing method thereof are provided to improve the contact resistance properties of a transparent transistor. CONSTITUTION: A transparent conductive film comprises mixed oxide of ZnO and SnO2, boron, and In2O3. The SnO2 or In2O3 comprises 1~90 weight%. A manufacturing method of the transparent conductive film is as follows. A target for the transparent conductive film doped with boron is prepared(S1). The transparent conductive film is metalized using the target(S2). The transparent conductive film is thermally processed(S3).

Abstract translation: 目的：提供透明导电膜及其制造方法，以提高透明晶体管的接触电阻性能。 构成：透明导电膜包括ZnO和SnO2，硼和In2O3的混合氧化物。 SnO 2或In 2 O 3含有1〜90重量％。 透明导电膜的制造方法如下。 制备掺杂硼的透明导电膜的靶（S1）。 透明导电膜使用靶（S2）进行金属化。 对透明导电膜进行热处理（S3）。

公开(公告)号：KR1020130105165A

公开(公告)日：2013-09-25

申请号：KR1020120027365

申请日：2012-03-16

Applicant: 한국전자통신연구원 ,  주식회사 나노신소재

Inventor： 정우석 ,  신재헌 ,  정승묵 ,  박장우 ,  김상희

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L29/7869

Abstract: PURPOSE: A thin film transistor is provided to facilitate manufacture processes by forming an oxide channel layer including a host material. CONSTITUTION: A channel layer (12) includes metal-boron oxide. The metal-boron oxide is arranged on a gate electrode. A gate insulating layer is arranged between the gate electrode and the channel layer. A source and a drain region (16) are combined with the channel layer. A channel protection layer (13) is arranged on the channel layer.

Abstract translation: 目的：提供薄膜晶体管，以通过形成包括主体材料的氧化物沟道层来促进制造工艺。 构成：沟道层（12）包括金属 - 氧化硼。 金属 - 氧化硼布置在栅电极上。 栅极绝缘层设置在栅电极和沟道层之间。 源极和漏极区域（16）与沟道层组合。 信道保护层（13）布置在信道层上。

公开(公告)号：KR101283686B1

公开(公告)日：2013-07-08

申请号：KR1020090111657

申请日：2009-11-18

Applicant: 한국전자통신연구원 ,  주식회사 나노신소재

Inventor： 정승묵 ,  정우석 ,  유민기 ,  황치선 ,  조경익 ,  김상희 ,  박장우

IPC: H01B1/22 ,  H01B1/02 ,  H01L21/203

Abstract: 본 발명은 열안정성 투명 도전막 및 투명 도전막의 제조방법에 관한 것이다. 본 발명에 따른 투명 도전막은 산화인듐 및 산화주석에 티타늄을 포함시킴으로써 비교적 낮은 온도에서의 열처리에도 결정화되고, 안정적인 비저항값을 가져 열안정성을 이룰 수 있다.
열안정성, 투명, 도전막, 티타늄

公开(公告)号：KR1020130053894A

公开(公告)日：2013-05-24

申请号：KR1020110119596

申请日：2011-11-16

Applicant: 한국전자통신연구원 ,  주식회사 나노신소재

Inventor： 정승묵 ,  신재헌 ,  정우석 ,  김상희 ,  박장우

IPC: H01L21/203 ,  C23C14/14 ,  C23C14/08

CPC classification number: C23C14/3414 ,  C23C14/086 ,  H01J37/3429

Abstract: PURPOSE: A method for manufacturing a sputtering target for an oxide thin film transistor is provided to increase mobility by doping tantalum to indium tin oxide. CONSTITUTION: Indium oxide powder, tin oxide powder, and tantalum powder are prepared(S10). Powders are pulverized and mixed(S20). Slurry is dried by a mixing and a pulverization process(S30). The dried powder is shaped. The shaped powder is sintered. [Reference numerals] (S10) Prepare; (S20) Mix and pulverize powder; (S30) Dry slurry; (S40) Shape and sinter the powder; (S50) Polish sintered body and bond a backing plate; (S60) End

Abstract translation: 目的：提供一种用于制造用于氧化物薄膜晶体管的溅射靶的方法，以通过将钽掺杂到氧化铟锡来增加迁移率。 构成：制备氧化铟粉末，氧化锡粉末和钽粉末（S10）。 将粉末粉碎并混合（S20）。 通过混合和粉碎处理干燥浆料（S30）。 干燥的粉末成型。 成型粉末烧结。 （附图标记）（S10）准备; （S20）混合粉碎粉末; （S30）干浆; （S40）形成并烧结粉末; （S50）抛光烧结体并粘合背板; （S60）结束

公开(公告)号：KR1020120035706A

公开(公告)日：2012-04-16

申请号：KR1020100097397

申请日：2010-10-06

Applicant: 한국전자통신연구원 ,  주식회사 나노신소재

Inventor： 정승묵 ,  정우석 ,  황치선 ,  조경익 ,  김상희 ,  박장우

IPC: C23C14/08

CPC classification number: C23C14/08 ,  C04B2235/3293 ,  C23C14/083 ,  C23C14/086 ,  C23C14/22 ,  C23C14/34 ,  C23C14/54

Abstract: PURPOSE: An indium tin oxide target for transparent electrode is provided to guarantee electro-chemical characteristic and light transmittance by using dopant material. CONSTITUTION: An indium tin oxide target for transparent electrode includes indium tin oxide, tin oxide, and metal oxide. The metal oxide is reduced. The ionic radius ratio of untreated metal oxide and the metal(M) of the reduced metal oxide is a range of 1.2~1.7:1.

Abstract translation: 目的：提供透明电极的氧化铟锡靶，以通过使用掺杂剂材料来保证电化学特性和透光率。 构成：用于透明电极的氧化铟锡靶包括氧化铟锡，氧化锡和金属氧化物。 金属氧化物被还原。 未处理的金属氧化物和还原金属氧化物的金属（M）的离子半径比在1.2〜1.7:1的范围内。