公开(公告)号：KR1020120106359A

公开(公告)日：2012-09-26

申请号：KR1020110024421

申请日：2011-03-18

Applicant: 한국전자통신연구원

Inventor： 박종혁 ,  박정영

IPC: H01B13/00 ,  G02F1/1343 ,  H01B5/14

CPC classification number: C23C26/02 ,  C23C4/123

Abstract: PURPOSE: A method for forming a metal oxide film is provided to control electrical conductivity of the metal oxide film by controlling doping conditions of an ion injection process. CONSTITUTION: A coating solution including a metal precursor is prepared(S110). The metal precursor is an organic metal compound. A coating layer is formed on a substrate by supplying the coating solution on the substrate(S120). The coating layer is formed by ink-jet printing, spin coating and screen printing. A first metal oxide film is formed by drying the coating layer(S130). The electrical conductivity of the first metal oxide film is controlled by doping impurity on the first metal oxide film. [Reference numerals] (AA) Start; (BB) End; (S110) Preparing a coating solution including a metal precursor; (S120) Forming a coating layer; (S130) Forming a first metal oxide film; (S140) Doping impurities(electric conductivity control)

Abstract translation: 目的：提供一种用于形成金属氧化物膜的方法，以通过控制离子注入工艺的掺杂条件来控制金属氧化物膜的导电性。 构成：制备包含金属前体的涂布溶液（S110）。 金属前体是有机金属化合物。 通过将涂布溶液供给到基板上，在基板上形成涂层（S120）。 涂层通过喷墨印刷，旋涂和丝网印刷形成。 通过干燥涂层形成第一金属氧化物膜（S130）。 通过在第一金属氧化物膜上掺杂杂质来控制第一金属氧化物膜的导电性。 （附图标记）（AA）开始; （BB）结束; （S110）制备包含金属前体的涂布溶液; （S120）形成涂层; （S130）形成第一金属氧化物膜; （S140）掺杂杂质（导电性控制）