公开(公告)号：KR100679235B1

公开(公告)日：2007-02-06

申请号：KR1020060014894

申请日：2006-02-16

Applicant: 한국전자통신연구원

Inventor： 김기수 ,  오대곤 ,  양계모

IPC: H01L33/14

Abstract: A semiconductor light emitting device and its manufacturing method are provided to improve a light emitting efficiency and to enhance temperature characteristics by forming an upper clad layer using two-step epitaxial growing processes under different temperature conditions. A first DBR(Distributed Brag Reflector)(220) doped with N type ions is formed on a substrate(210). A lower clad layer(230) is formed on the first DBR. A light emissive active layer(240) is formed on the lower clad layer. A first upper clad layer is formed on the light emissive active layer in a first growth temperature range. A second upper clad layer is formed on the first upper clad layer in a second growth temperature range. A delta doping layer is formed on the second upper clad layer.

Abstract translation: 提供半导体发光器件及其制造方法以通过在不同温度条件下使用两步外延生长工艺形成上包覆层来提高发光效率并提高温度特性。 在衬底（210）上形成掺杂有N型离子的第一DBR（分布式布拉格反射器）（220）。 下包层（230）形成在第一DBR上。 在下部覆层上形成发光有源层（240）。 第一上包覆层在第一生长温度范围内形成在发光有源层上。 第二上部包覆层在第二生长温度范围内形成在第一上部包覆层上。 在第二上包层上形成三角掺杂层。