公开(公告)号：KR100902710B1

公开(公告)日：2009-06-15

申请号：KR1020070138412

申请日：2007-12-27

Applicant: 한국정보통신대학교 산학협력단

Inventor： 윤기완 ,  이재영

IPC: H03H9/25 ,  H01L27/02

CPC classification number: H03H9/25 ,  H01F17/0006 ,  H01F27/292 ,  H01L27/04 ,  H03H9/02755

Abstract: An RF device using bragg reflector and method for fabricating the same are provided to simplify the processing procedure and reduce the loss. The semiconductor substrate(100) comprises a bragg reflector(120) and the inductor pattern(140) for RF. The inductor pattern for RF is formed on the top of the bragg reflector. An under-bar is formed in the upper some area of the bragg reflector. The under-bar is completely filled with the insulating layer. A part of the insulating layer is etched and the via hole is perpendicularly connected to the under bar. The via contact is formed by depositing a metallic layer on the insulating layer. The inductor pattern for RF is formed on the top of the insulating layer. The inductor pattern for RF is connected to the under bar through the via contact.

Abstract translation: 提供了使用布拉格反射体的RF器件及其制造方法，以简化处理过程并减少损耗。 半导体衬底（100）包括用于RF的布拉格反射器（120）和电感器图案（140）。 用于RF的电感器图案形成在布拉格反射器的顶部。 在布拉格反射器的上部某个区域中形成下杆。 底棒完全填充绝缘层。 蚀刻绝缘层的一部分，并且通孔垂直地连接到下面的条上。 通孔接触通过在绝缘层上沉积金属层而形成。 用于RF的电感器图案形成在绝缘层的顶部上。 用于RF的电感器图案通过通孔触点连接到下条。