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公开(公告)号：KR100454101B1
公开(公告)日：2004-10-26
申请号：KR1020020014172
申请日：2002-03-15
Applicant: 한국화학연구원
Abstract: PURPOSE: A method and device for purifying phosphate are provided, thereby rapidly and cheaply purifying phosphate. CONSTITUTION: A method for purifying phosphate comprises the steps of: (1) injecting unpurified phosphate(P2O5) material to a vaporization vessel having the temperature of 40 to 200 deg. C to concentrate the concentration of phosphate to 60 to 80%; (2) injecting the concentrated phosphate solution to a crystallization vessel having the temperature of -70 to 20 deg. C to prepare phosphate crystals; and (3) injecting the phosphate crystals to a partial dissolving device having the temperature of 20 to 80 deg. C to partially dissolve the phosphate crystals and stir the solution, wherein the unpurified phosphate material is lower phosphate prepared from phosphate ore by a dry or wet process; the phosphate crystal contains the total content of impurities of 100 to 30,000 ppb.
Abstract translation: 目的：提供了用于纯化磷酸盐的方法和装置，由此快速廉价地纯化磷酸盐。 构成：一种净化磷酸盐的方法，包括以下步骤：（1）将未纯化的磷酸盐（P2O5）物料注入温度为40-200℃的汽化容器中。 C将磷酸盐的浓度浓缩至60至80％; （2）将浓磷酸溶液注入温度为-70至20℃的结晶容器中。 C来制备磷酸盐晶体; （3）将磷酸盐晶体注入温度为20-80℃的部分溶解装置中。 以部分溶解磷酸盐晶体并搅拌溶液，其中未纯化的磷酸盐材料是由磷酸盐矿石通过干法或湿法制备的低磷酸盐; 磷酸盐晶体含有100至30,000ppb的杂质总含量。
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公开(公告)号：KR1020030075069A
公开(公告)日：2003-09-22
申请号：KR1020020014172
申请日：2002-03-15
Applicant: 한국화학연구원
CPC classification number: C01B25/234 , C01P2006/80
Abstract: PURPOSE: A method and device for purifying phosphate are provided, thereby rapidly and cheaply purifying phosphate. CONSTITUTION: A method for purifying phosphate comprises the steps of: (1) injecting unpurified phosphate(P2O5) material to a vaporization vessel having the temperature of 40 to 200 deg. C to concentrate the concentration of phosphate to 60 to 80%; (2) injecting the concentrated phosphate solution to a crystallization vessel having the temperature of -70 to 20 deg. C to prepare phosphate crystals; and (3) injecting the phosphate crystals to a partial dissolving device having the temperature of 20 to 80 deg. C to partially dissolve the phosphate crystals and stir the solution, wherein the unpurified phosphate material is lower phosphate prepared from phosphate ore by a dry or wet process; the phosphate crystal contains the total content of impurities of 100 to 30,000 ppb.
Abstract translation: 目的：提供磷酸盐提纯方法和装置，从而快速，廉价地净化磷酸盐。 构成：用于纯化磷酸盐的方法包括以下步骤：（1）将未纯化的磷酸盐（P 2 O 5）材料注入到温度为40至200℃的蒸发容器中。 C浓缩磷酸盐浓度至60〜80％; （2）将浓缩的磷酸盐溶液注入温度为-70〜20℃的结晶容器中。 C制备磷酸盐晶体; 和（3）将磷酸盐晶体注入到温度为20〜80℃的部分溶解装置中。 C部分溶解磷酸盐晶体并搅拌溶液，其中未纯化的磷酸盐物质是通过干法或湿法由磷酸盐矿石制备的较低磷酸盐; 磷酸盐晶体含杂质总含量为100〜30,000ppb。
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公开(公告)号：KR100567447B1
公开(公告)日：2006-04-04
申请号：KR1020040028767
申请日：2004-04-26
Applicant: 한국화학연구원
IPC: C23F1/46
Abstract: 본 발명은 TFT-LCD 혼합산 폐에칭액으로부터 인산, 질산 및 초산을 초고순도로 분리, 회수하는 방법에 관한 것으로서, 더욱 상세하게는 TFT-LCD 혼합산 폐에칭액을 재활용하는 방법으로, TFT-LCD 기판의 알루미늄 및 합금을 인산, 질산 및 초산이 포함된 혼합산으로 에칭한 후에 배출되는 폐에칭액으로부터 첨가제나 용매의 첨가 없이 경막 용융 결정화 과정과 감압증발 과정을 수행함으로써 초고순도의 인산(H
3 PO
4 ), 질산(HNO
3 ) 및 초산(CH
3 COOH)을 각각 분리, 회수하는 방법에 관한 것이다.
TFT-LCD 혼합산 폐에칭액, 인산, 질산, 초산-
公开(公告)号：KR100593833B1
公开(公告)日：2006-06-28
申请号：KR1020040031870
申请日：2004-05-06
Applicant: 한국화학연구원
IPC: C09K13/06
Abstract: 본 발명은 반도체 폐에칭액으로부터 초고순도 인산의 분리ㆍ회수방법에 관한 것으로서, 더욱 상세하게는 반도체 에칭공정에서 배출되는 폐에칭액을 재활용하는 방법으로서, 실리콘 웨이퍼의 질화규소막(Si
3 N
4 )에칭공정에서 배출되는 폐에칭액으로부터 첨가제나 용매의 첨가 없이 경막 용융 결정화 과정을 수행함으로써 초고순도 인산을 각각 분리ㆍ회수하는 방법에 관한 것이다.
반도체 폐에칭액, 인산, 질화규소막, 경막 용융 결정화Abstract translation: 本发明涉及一种从半导体废弃蚀刻溶液中分离回收超纯磷酸的方法，更具体地涉及一种对从半导体蚀刻过程中排出的废蚀刻溶液进行再循环的方法，
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公开(公告)号：KR100447941B1
公开(公告)日：2004-09-08
申请号：KR1020010072627
申请日：2001-11-21
Applicant: 한국화학연구원
IPC: C30B29/14
Abstract: PURPOSE: A method for obtaining high purity phosphoric acid crystal to the maximum yield by efficiently removing about 24 types of heavy metal remained in phosphoric acid as impurities, and an apparatus for manufacturing the high purity phosphoric acid crystal are provided. CONSTITUTION: The apparatus comprises a crystal manufacturing unit (10) comprising a raw material phosphoric acid tank (11) for supplying phosphoric acid, and a crystallization tank (14) on the outer part of which a jacket (12) is formed, and in which a scraper (13) is installed so that an internal temperature is maintained to -70 to -30 deg.C using refrigerant circulating the external jacket (12), and phosphoric acid seed crystal is continuously manufactured by scraping crystal on the wall surface of the crystallization tank (14) using the scraper (13); a crystal aging unit (20) comprising refrigerant circulator (21) and temperature sensor (22) for temperature controlling, and an aging tank (24) in which a propeller impeller (23) is installed, and which receives phosphoric acid crystal so that the phosphoric acid crystal is aged for 10 to 40 minutes by cooling it to a temperature of 4 to 20 deg.C; and a crystal purifying unit (30) comprising a purifying tank (33) comprising a jacket (31) installed on the outer part of the purifying tank (33) to maintain temperature and a heater (32) installed inside the purifying tank (33) to melt crystal so that some of the crystal grains are refluxed while some of the crystal grains are taken as product by melting crystal grains precipitated into the bottom by gravity of the crystal grains.
Abstract translation: 目的：提供一种通过有效地除去作为杂质残留在磷酸中的约24种重金属以获得最高产率的高纯度磷酸晶体的方法以及一种用于制造高纯度磷酸晶体的设备。 本发明的装置包括：晶体制造单元（10），其包括用于供应磷酸的原料磷酸罐（11）和结晶罐（14），结晶罐的外部形成有夹套（12），并且在结晶罐 其中安装刮板（13），使得利用循环外部夹套（12）的制冷剂将内部温度保持在-70至-30℃，并且通过刮擦壁表面上的晶体连续制造磷酸晶种 使用刮刀（13）的结晶罐（14）; 包括用于温度控制的制冷剂循环器（21）和温度传感器（22）的晶体老化单元（20）以及其中安装有螺旋桨叶轮（23）的老化箱（24），并且其接收磷酸晶体， 通过将磷酸晶体冷却至4至20℃的温度来熟化10至40分钟; 和包括净化罐（33）的晶体净化单元（30），所述净化罐包括安装在净化罐（33）的外部以保持温度的外壳（31）和安装在净化罐（33）内的加热器（32） 通过晶粒的重力熔化结晶，使一些晶粒回流，同时使一些晶粒作为产物被熔化，从而通过熔化沉淀到底部的晶粒。
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Patent Agency Ranking
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公开(公告)号：KR1020050106825A
公开(公告)日：2005-11-11
申请号：KR1020040031870
申请日：2004-05-06
Applicant: 한국화학연구원
IPC: C09K13/06
Abstract: 본 발명은 반도체 폐에칭액으로부터 초고순도 인산의 분리ㆍ회수방법에 관한 것으로서, 더욱 상세하게는 반도체 에칭공정에서 배출되는 폐에칭액을 재활용하는 방법으로서, 실리콘 웨이퍼의 질화규소막(Si
3 N
4 )에칭공정에서 배출되는 폐에칭액으로부터 첨가제나 용매의 첨가 없이 경막 용융 결정화 과정을 수행함으로써 초고순도 인산을 각각 분리ㆍ회수하는 방법에 관한 것이다.-
公开(公告)号：KR1020050103570A
公开(公告)日：2005-11-01
申请号：KR1020040028767
申请日：2004-04-26
Applicant: 한국화학연구원
IPC: C23F1/46
Abstract: 본 발명은 TFT-LCD 혼합산 폐에칭액으로부터 인산, 질산 및 초산을 초고순도로 분리, 회수하는 방법에 관한 것으로서, 더욱 상세하게는 TFT-LCD 혼합산 폐에칭액을 재활용하는 방법으로, TFT-LCD 기판의 알루미늄 및 합금을 인산, 질산 및 초산이 포함된 혼합산으로 에칭한 후에 배출되는 폐에칭액으로부터 첨가제나 용매의 첨가 없이 경막 용융 결정화 과정과 감압증발 과정을 수행함으로써 초고순도의 인산(H
3 PO
4 ), 질산(HNO
3 ) 및 초산(CH
3 COOH)을 각각 분리, 회수하는 방법에 관한 것이다.-
公开(公告)号：KR1020030042108A
公开(公告)日：2003-05-28
申请号：KR1020010072627
申请日：2001-11-21
Applicant: 한국화학연구원
IPC: C30B29/14
CPC classification number: C01B25/234 , C30B29/14
Abstract: PURPOSE: A method for obtaining high purity phosphoric acid crystal to the maximum yield by efficiently removing about 24 types of heavy metal remained in phosphoric acid as impurities, and an apparatus for manufacturing the high purity phosphoric acid crystal are provided. CONSTITUTION: The apparatus comprises a crystal manufacturing unit (10) comprising a raw material phosphoric acid tank (11) for supplying phosphoric acid, and a crystallization tank (14) on the outer part of which a jacket (12) is formed, and in which a scraper (13) is installed so that an internal temperature is maintained to -70 to -30 deg.C using refrigerant circulating the external jacket (12), and phosphoric acid seed crystal is continuously manufactured by scraping crystal on the wall surface of the crystallization tank (14) using the scraper (13); a crystal aging unit (20) comprising refrigerant circulator (21) and temperature sensor (22) for temperature controlling, and an aging tank (24) in which a propeller impeller (23) is installed, and which receives phosphoric acid crystal so that the phosphoric acid crystal is aged for 10 to 40 minutes by cooling it to a temperature of 4 to 20 deg.C; and a crystal purifying unit (30) comprising a purifying tank (33) comprising a jacket (31) installed on the outer part of the purifying tank (33) to maintain temperature and a heater (32) installed inside the purifying tank (33) to melt crystal so that some of the crystal grains are refluxed while some of the crystal grains are taken as product by melting crystal grains precipitated into the bottom by gravity of the crystal grains.
Abstract translation: 目的：通过有效地除去作为杂质的磷酸中残留的约24种重金属，获得高纯度磷酸结晶的方法，提供高纯度磷酸晶体的制造装置。 构成：该装置包括晶体制造单元（10），该晶体制造单元包括用于供给磷酸的原料磷酸槽（11）和在其外部形成有外壳（12）的结晶槽（14），并且 其中安装有刮刀（13），使得内部温度保持在-70至-30℃，使用循环外壳（12）的制冷剂，并且磷酸晶种通过在 使用刮刀（13）的结晶槽（14）; 包括用于温度控制的制冷剂循环器（21）和温度传感器（22）的晶体老化单元（20）和安装螺旋桨叶轮（23）的老化箱（24），并且接收磷酸晶体， 通过将磷酸晶体冷却至4〜20℃的温度而老化10〜40分钟; 以及包括净化罐（33）的晶体净化单元（30），所述净化槽包括安装在所述净化罐（33）的外部以保持温度的护套（31）和安装在所述净化槽（33）内的加热器（32） 熔化晶体，使得一些晶粒回流，同时通过将通过晶粒重力沉淀到底部的晶粒熔化而将一些晶粒作为产物而被回收。
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