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公开(公告)号：KR1020080022326A
公开(公告)日：2008-03-11
申请号：KR1020060085631
申请日：2006-09-06
Applicant: 한양대학교 산학협력단
Abstract: A method of manufacturing p-type ZnO using pulsed rapid thermal annealing is provided to easily convert an n-type ZnO film into a p-type ZnO film at a low temperature. N-type zinc oxide is deposited on a substrate to form a ZnO film, and then the n-type ZnO film is doped with p-type dopant element. The ZnO film doped with the dopant element is subjected to heat treatment by repeatedly applying heat having a peak temperature between 500 and 1000 deg.C while a base temperature is maintained in a range of 0 to 500 deg.C. The heat treatment is repeatedly performed by applying the base temperature during several seconds to several times and the peak temperature during several seconds to several minutes.
Abstract translation: 提供使用脉冲快速热退火制造p型ZnO的方法，以便在低温下容易地将n型ZnO膜转变成p型ZnO膜。 在基板上沉积N型氧化锌以形成ZnO膜，然后将n型ZnO膜掺杂有p型掺杂元素。 掺杂掺杂剂元素的ZnO膜通过在基础温度保持在0〜500℃的范围内，通过重复施加峰值温度在500〜1000℃之间的热进行热处理。 通过将基础温度施加几秒到几次并且峰值温度在几秒至几分钟内重复进行热处理。
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公开(公告)号：KR100806681B1
公开(公告)日：2008-02-26
申请号：KR1020060085630
申请日：2006-09-06
Applicant: 한양대학교 산학협력단
Abstract: A preparation method of high conductive ZnO by pulsed rapid thermal annealing is provided to prepare ZnO which has high conductivity and can be used on an inexpensive substrate having a low melting point. A preparation method of high conductive ZnO comprises the steps of: forming a ZnO-based thin film on a glass substrate; doping a donor-forming element onto the ZnO-based thin film; and subjecting the ZnO-based thin film to thermal annealing by repeatedly increasing temperature of the substrate to a peak temperature ranging from 500 to 1000 deg.C while maintaining a substrate on which the ZnO-based thin film is formed to a base temperature. The step of forming the ZnO-based thin film and the step of doping the ZnO-based thin film with the donor-forming element are carried out simultaneously. The donor-forming element is a group III element selected from aluminum(Al), gallium(Ga), indium(In) and boron(B) that are group III elements in the periodic table in the elements.
Abstract translation: 提供通过脉冲快速热退火的高导电性ZnO的制备方法，以制备具有高导电性的ZnO并且可以用于具有低熔点的廉价基板上。 高导电ZnO的制备方法包括以下步骤：在玻璃基板上形成ZnO基薄膜; 将供体形成元素掺杂到ZnO基薄膜上; 并且通过将衬底的温度重复地提高至500〜1000℃的峰值温度，同时将ZnO系薄膜进行热退火，同时将其上形成ZnO基薄膜的基板保持在基底温度。 形成ZnO基薄膜的步骤和与供体形成元件掺杂ZnO基薄膜的步骤同时进行。 供体形成元素是选自元素周期表中的III族元素的铝（Al），镓（Ga），铟（In）和硼（B））中的III族元素。
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公开(公告)号：KR100860011B1
公开(公告)日：2008-09-25
申请号：KR1020060085631
申请日：2006-09-06
Applicant: 한양대학교 산학협력단
Abstract: 본 발명은 주기적 급속 열처리에 의한 p형 산화아연의 제조방법에 관한 것으로, 더욱 상세하게는 증착된 n형 산화아연 박막에 억셉터 형성을 위한 p형 도판트용 원소를 도핑하여 선택적으로 주입하고, 펄스 형식의 주기적 급속 열처리(Pulsed Rapid Thermal Annealing, PRTA)를 수행함으로써, 종래의 p형 산화아연 제조방법과는 달리 기판의 열처리에 의한 손상이 없이 p형 산화아연으로의 전환이 가능하여 저온의 녹는점을 가지는 기판에도 도입할 수 있는 주기적 급속 열처리에 의한 p형 산화아연의 제조방법에 관한 것이다.
n형 산화아연, p형 산화아연, 저온, 펄스, 급속 열처리
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