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公开(公告)号：KR1020090128447A
公开(公告)日：2009-12-15
申请号：KR1020097020704
申请日：2008-02-28
Applicant: 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피.
CPC classification number: H01L29/0665 , B82Y10/00 , H01L21/0237 , H01L21/02521 , H01L21/02603 , H01L21/02606 , H01L21/0262 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L31/035281 , H01L31/036 , H01L33/18 , Y02E10/50
Abstract: A hetero-crystalline semiconductor device 100 and a method 200 of making the same include a non-single crystalline semiconductor layer 110, 140 and a nanostructure layer 120 that comprises a single crystalline semiconductor nanostructure 122, 124 integral to a crystallite 112 of the non-single crystalline semiconductor layer 110. 140.
Abstract translation: 异相半导体器件100和制造其的方法200包括非单晶半导体层110,140和纳米结构层120，纳米结构层120包括与非晶体半导体层130的微晶112成一体的单晶半导体纳米结构122,124， 单晶半导体层110。
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公开(公告)号：KR1020100022997A
公开(公告)日：2010-03-03
申请号：KR1020097026764
申请日：2008-06-25
Applicant: 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피.
Inventor： 왕,시흐-유안 , 탄,마이클 , 브라트코브스키,알렉산드레 , 윌리암스,알.스탠리 , 고바야시,노부히꼬
CPC classification number: G02B6/4202 , B82Y20/00 , G02B6/305 , G02B6/4236 , H01L31/03529 , Y02E10/50 , Y10S977/765
Abstract: Nanowire-based photodiodes (100, 200, 300, 400) are disclosed. The photodiodes include a first optical waveguide (102, 202, 302, 402) having a tapered first end (106, 206, 306, 406), a second optical waveguide (104, 204, 304, 404) having a tapered second end (110, 210, 310, 410), and at least one nanowire (114, 214, 314, 414) comprising at least one semiconductor material connecting the first and second ends (108, 112, 208, 212, 308, 312, 408, 412) in a bridging configuration. Methods of making the photodiodes are also disclosed.
Abstract translation: 公开了基于纳米线的光电二极管（100,200,300,400）。 光电二极管包括具有渐缩的第一端（106,206,306,406）的第一光波导（102,202,302,402），具有锥形第二端的第二光波导（104,204,304,404） 110,210,310,410）和至少一个纳米线（114,214,314,414），其包括连接所述第一端和所述第二端（108,112,208,212,308,312,404,410,410,410,410）的至少一个半导体材料， 412）以桥接配置。 还公开了制造光电二极管的方法。
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公开(公告)号：KR101455706B1
公开(公告)日：2014-10-28
申请号：KR1020097022246
申请日：2008-04-25
Applicant: 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피.
IPC: H01L31/00
CPC classification number: H01S5/341 , B82Y20/00 , H01L31/035281 , H01L31/09 , H01L31/1025 , H01S5/021 , H01S5/125 , H01S5/3412 , H01S5/4031 , H01S5/5018 , H01S5/5072 , H01S2301/14 , Y02E10/50 , Y10S977/762
Abstract: 나노 와이어들, 광 검출기들 및 반도체 광 증폭기들을 포함하는 나노 와이어 기반 광전자 장치들(100, 200, 300, 400, 500)이 개시된다. 장치들은 단결정 및/또는 단결정 아닌 표면들로부터 성장된 나노 와이어들(114, 214, 324, 434, 436, 560, 562)을 포함한다. 반도체 광 증폭기들은 신호 도파관에 의해 운반되는 신호를 증폭하기 위해 밸러스트 레이저들로서 작용하는 나노 와이어 어레이들을 포함한다. 나노 와이어 레이저들 및 광 검출기들의 실시예들은 상이한 편광들을 제공할 수 있는 수평 및 수직 나노 와이어들(434, 436, 562, 560)을 포함한다.
나노 와이어 기반 광전자 장치, 반도체 광 증폭기, 광 검출기, 나노 와이어, 나노 와이어 레이저-
公开(公告)号：KR1020100015869A
公开(公告)日：2010-02-12
申请号：KR1020097022246
申请日：2008-04-25
Applicant: 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피.
IPC: H01L31/00
CPC classification number: H01S5/341 , B82Y20/00 , H01L31/035281 , H01L31/09 , H01L31/1025 , H01S5/021 , H01S5/125 , H01S5/3412 , H01S5/4031 , H01S5/5018 , H01S5/5072 , H01S2301/14 , Y02E10/50 , Y10S977/762
Abstract: Nanowire-based opto-electronic devices (100, 200, 300, 400, 500) including nanowire layers, photodetectors and semiconductor optical amplifiers are disclosed. The devices include nanowires (114, 214, 324, 434, 436, 560, 562) grown from single crystal and/or non-single surfaces. The semiconductor optical amplifiers include nanowire arrays that act as ballast lasers to amplify a signal carried by a signal waveguide. Embodiments of the nanowire lasers and photodetectors include horizontal and vertical nanowires (434, 436, 562, 560) that can provide different ploarizations.
Abstract translation: 公开了包括纳米线层，光电检测器和半导体光放大器的基于纳米线的光电子器件（100,200,300,400,500）。 这些器件包括从单晶和/或非单一表面生长的纳米线（114,214,324,434,436,560,562）。 半导体光放大器包括用作镇流器激光器以放大由信号波导承载的信号的纳米线阵列。 纳米线激光器和光电检测器的实施例包括可以提供不同扩散的水平和垂直的纳米线（434,436,562,560）。
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