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1.发明申请METHOD FOR CREATING A SEMICONDUCTOR WAFER HAVING PROFILED DOPING AND WAFERS AND SOLAR CELL COMPONENTS HAVING A PROFILED FIELD, SUCH AS DRIFT AND BACK SURFACE 审中-公开用于创建具有轮廓抛光和抛光的半导体波形的方法和具有轮廓和后表面的轮廓细胞部件
公开(公告)号：WO2016122731A1
公开(公告)日：2016-08-04
申请号：PCT/US2015/055460
申请日：2015-10-14
Applicant: 1366 TECHNOLOGIES, INC.
Inventor： JONCZYK, Ralf , KERNAN, Brian, D. , HUDELSON, Stephen, G.D. , LORENZ, Adam, M. , SACHS, Emanuel, M.
IPC: H01L21/00
CPC classification number: H01L31/1804 , H01L21/00 , H01L31/02167 , H01L31/022425 , H01L31/0288 , H01L31/056 , H01L31/068 , Y02E10/52 , Y02E10/547 , Y02P70/521
Abstract: A semiconductor wafer forms on a mold containing a dopant. The dopant dopes a melt region adjacent the mold. There, dopant concentration is higher than in the melt bulk. A wafer starts solidifying. Dopant diffuses poorly in solid semiconductor. After a wafer starts solidifying, dopant can not enter the melt. Afterwards, the concentration of dopant in the melt adjacent the wafer surface is less than what was present where the wafer began to form. New wafer regions grow from a melt region whose dopant concentration lessens over time. This establishes a dopant gradient in the wafer, with higher concentration adjacent the mold. The gradient can be tailored. A gradient gives rise to a field that can function as a drift or back surface field. Solar collectors can have open grid conductors and better optical reflectors on the back surface, made possible by the intrinsic back surface field.
Abstract translation: 在包含掺杂剂的模具上形成半导体晶片。 掺杂剂掺杂与模具相邻的熔融区域。 那里，掺杂剂浓度高于熔体体积。 晶片开始凝固。 掺杂剂在固体半导体中扩散不良。 晶圆开始凝固后，掺杂剂不能进入熔体。 之后，与晶片表面相邻的熔体中的掺杂剂浓度小于晶片开始形成时的浓度。 新的晶片区域从其掺杂浓度随时间减少的熔融区域生长。 这在晶片中建立了掺杂剂梯度，在模具附近具有较高的浓度。 渐变可以定制。 梯度产生可用作漂移或背表面场的场。 太阳能集热器可以在后表面具有开放的栅格导体和更好的光学反射器，这可以通过固有的背面场来实现。
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2.发明公开METHOD FOR CREATING A SEMICONDUCTOR WAFER HAVING PROFILED DOPING AND WAFERS AND SOLAR CELL COMPONENTS HAVING A PROFILED FIELD, SUCH AS DRIFT AND BACK SURFACE 审中-公开用于制造具有异形掺杂和半导体的半导体晶片以及具有异型场的太阳能电池元件的方法，例如漂移和背面
公开(公告)号：EP3251146A1
公开(公告)日：2017-12-06
申请号：EP15880612.5
申请日：2015-10-14
Applicant: 1366 Technologies Inc.
Inventor： JONCZYK, Ralf , KERNAN, Brian, D. , HUDELSON, G. D. Stephen , LORENZ, Adam, M. , SACHS, Emanuel, M.
IPC: H01L21/00
CPC classification number: H01L31/1804 , H01L21/00 , H01L31/02167 , H01L31/022425 , H01L31/0288 , H01L31/056 , H01L31/068 , Y02E10/52 , Y02E10/547 , Y02P70/521
Abstract: A semiconductor wafer forms on a mold containing a dopant. The dopant dopes a melt region adjacent the mold. There, dopant concentration is higher than in the melt bulk. A wafer starts solidifying. Dopant diffuses poorly in solid semiconductor. After a wafer starts solidifying, dopant can not enter the melt. Afterwards, the concentration of dopant in the melt adjacent the wafer surface is less than what was present where the wafer began to form. New wafer regions grow from a melt region whose dopant concentration lessens over time. This establishes a dopant gradient in the wafer, with higher concentration adjacent the mold. The gradient can be tailored. A gradient gives rise to a field that can function as a drift or back surface field. Solar collectors can have open grid conductors and better optical reflectors on the back surface, made possible by the intrinsic back surface field.
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公开(公告)号：EP3251146B1
公开(公告)日：2020-12-02
申请号：EP15880612.5
申请日：2015-10-14
Applicant: 1366 Technologies Inc.
Inventor： JONCZYK, Ralf , KERNAN, Brian, D. , HUDELSON, G. D. Stephen , LORENZ, Adam, M. , SACHS, Emanuel, M.
IPC: H01L31/0288 , H01L31/18 , C30B29/06 , C30B31/04 , C30B28/04 , H01L21/00 , H01L31/068
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