-
公开(公告)号：WO2021188452A1
公开(公告)日：2021-09-23
申请号：PCT/US2021/022402
申请日：2021-03-15
Applicant: 1366 TECHNOLOGIES, INC.
Inventor： JONCZYK, Ralf , MCMAHON, Patrick
IPC: H01L31/0236 , H01L31/18 , H01L31/182
Abstract: A method includes etching silicon using a mixture of nitric acid and hydrofluoric acid in which less than 6 mols of hydrofluoric acid is used to etch one mol of silicon. The etching may be conducted at an elevated temperature, such as a temperature of at least 70 degrees Celsius.
Search Results
1
records
(took 0.02 seconds)
筛选
AND
AND
过滤
NOT
NOT
Scan to Join
