公开(公告)号：WO2021214567A1

公开(公告)日：2021-10-28

申请号：PCT/IB2021/052220

申请日：2021-03-17

Applicant: 3M INNOVATIVE PROPERTIES COMPANY

Inventor： SUN, Xiaoguang ,  YANG, Zhaohui

IPC: G02B5/00 ,  A61B5/1172 ,  G02B3/00 ,  G02B5/22 ,  G02B5/28 ,  G06K9/00

Abstract: An optical construction includes a lens film and a mask layer. The lens film includes an outermost structured first major surface and an opposing outermost substantially planar second major surface. The first major surface includes a plurality of microlenses arranged along orthogonal first and second directions. The mask layer is disposed on the second major surface of the lens film and includes a first layer including a first metal, a second layer including a second metal and a third layer disposed between the first and second layers. For substantially normally incident light, each of the first and second layers has an optical reflectance of greater than about 5%, the third layer has an optical transmittance of greater than about 70%, and the mask layer has an optical reflectance of less than about 20%. The mask layer defines a plurality of through openings aligned to the microlenses in a one-to-one correspondence.

公开(公告)号：WO2006062560A1

公开(公告)日：2006-06-15

申请号：PCT/US2005/029852

申请日：2005-08-22

Applicant: 3M INNOVATIVE PROPERTIES COMPANY

Inventor： MILLER, Thomas, J. ,  HAASE, Michael, A. ,  SUN, Xiaoguang

IPC: H01L33/00

CPC classification number: H01L33/28 ,  B82Y20/00 ,  H01L33/0008 ,  H01L33/06

Abstract: A semiconductor device is provided comprising a first potential well located within a pn junction and a second potential well not located within a pn junction. The potential wells may be quantum wells. The semiconductor device is typically an LED, and may be a white or near-white light LED. The semiconductor device may additionally comprise a third potential well not located within a pn junction. The semiconductor device may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the second or third quantum wells. In addition, graphic display devices and illumination devices comprising the semiconductor device according to the present invention are provided.

Abstract translation: 提供了一种半导体器件，其包括位于pn结内的第一势阱和不位于pn结内的第二势阱。 势阱可能是量子阱。 半导体器件通常是LED，并且可以是白色或近白色的光LED。 半导体器件还可以包括不位于pn结内的第三势阱。 半导体器件还可以包括围绕或紧密或紧邻第二或第三量子阱的吸收层。 此外，提供了包括根据本发明的半导体器件的图形显示装置和照明装置。

公开(公告)号：WO2018080830A1

公开(公告)日：2018-05-03

申请号：PCT/US2017/056846

申请日：2017-10-17

Applicant: 3M INNOVATIVE PROPERTIES COMPANY

Inventor： ERICKSON, Nicholas C. ,  DAVID, Moses M. ,  SUN, Xiaoguang ,  NIRMAL, Manoj ,  SYKORA, Haeen ,  LUO, Hui ,  CARPENTER, Samuel J. ,  NELSON, Jilliann M. ,  MEYER, Justin P. ,  CHIEN, Bert T. ,  ROWE, David J. ,  BROTT, Robert L. ,  FREIER, David G. ,  LECHUGA, Hyacinth L.

IPC: H01L51/52 ,  H01L51/56 ,  B82B1/00 ,  H01L27/32

Abstract: A nanostructured article having a first layer with a nanostructured surface is described. The nanostructured surface includes a plurality of pillars extending from a base surface of the first layer. The pillars have an average height greater than an average lateral dimension of the pillars. An average center-to-center spacing between pillars is no more than 2000 nm. The average lateral dimension is no less than 50 nm. Each pillar in the plurality of pillars has at least a lower portion and an upper portion where the lower portion is between the upper portion and the base surface, and the upper and lower portions have differing compositions. The nanostructured article includes a second layer disposed over the plurality of pillars and extending continuously to the base surface.

Abstract translation: 描述了具有纳米结构化表面的第一层的纳米结构制品。 纳米结构化表面包括从第一层的基底表面延伸的多个柱。 支柱的平均高度大于支柱的平均横向尺寸。 柱之间的平均中心间距不超过2000纳米。 平均横向尺寸不小于50纳米。 多个支柱中的每个支柱至少具有下部和上部，其中下部位于上部和基部表面之间，并且上部和下部具有不同的组成。 纳米结构制品包括设置在多个柱之上并连续延伸到基底表面的第二层。

公开(公告)号：WO2011153153A1

公开(公告)日：2011-12-08

申请号：PCT/US2011/038580

申请日：2011-05-31

Applicant: 3M INNOVATIVE PROPERTIES COMPANY ,  HAASE, Michael, A. ,  XIE, Junqing ,  MILLER, Thomas, J. ,  SUN, Xiaoguang

Inventor： HAASE, Michael, A. ,  XIE, Junqing ,  MILLER, Thomas, J. ,  SUN, Xiaoguang

IPC: H01L33/50 ,  H01L25/075

CPC classification number: H01L33/08 ,  H01L25/0756 ,  H01L33/50 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Light emitting systems are disclosed. More particularly light emitting systems that utilize wavelength converting semiconductor layer stacks, and preferred amounts of potential well types in such stacks to achieve more optimal performance are disclosed

Abstract translation: 公开了发光系统。 更具体地，公开了利用波长转换半导体层堆叠的发光系统以及这些堆叠中的优选量的潜在阱类型以获得更优化的性能

公开(公告)号：WO2022195442A1

公开(公告)日：2022-09-22

申请号：PCT/IB2022/052264

申请日：2022-03-14

Applicant: 3M INNOVATIVE PROPERTIES COMPANY

Inventor： SUN, Xiaoguang ,  HAASE, Michael A.

IPC: G02B6/38

Abstract: An optical ferrule for transmitting and propagating light having a predetermined wavelength includes a polymeric ferrule body having a fiber alignment feature for receiving an optical fiber, a redirecting side for redirecting light, and an output side window for exiting light therethrough. A multilayer anti-reflection film is disposed on the output side window and includes at least two first layers including titanium oxide and at least two second layers including silicon dioxide. At least one of the two first layers is thinner than an optimum thickness that would minimize reflection at the predetermined wavelength. Heating the optical ferrule at a temperature of about 85 degrees centigrade for at least five hours results in no, or very little, damage to the multilayer anti-reflection film.

公开(公告)号：WO2011153141A2

公开(公告)日：2011-12-08

申请号：PCT/US2011/038562

申请日：2011-05-31

Applicant: 3M INNOVATIVE PROPERTIES COMPANY ,  HAASE, Michael A., ,  MILLER, Thomas J., ,  SMITH, Terry L., ,  SUN, Xiaoguang ,  XIE, Junqing,

Inventor： HAASE, Michael A., ,  MILLER, Thomas J., ,  SMITH, Terry L., ,  SUN, Xiaoguang ,  XIE, Junqing,

IPC: H01L33/08 ,  H01L21/02 ,  H01L33/50

CPC classification number: H01L33/504 ,  H01L21/02477 ,  H01L21/0256 ,  H01L21/02568 ,  H01L33/08 ,  H01L33/50

Abstract: Light emitting systems are described. Particularly, light emitting systems and light converting components utilized within these systems are described. The light emitting system and components are formed such that dark-line defects do not interfere with the light emitting system efficiency.

Abstract translation: 描述发光系统。 特别地，描述了在这些系统中使用的发光系统和光转换组件。 发光系统和部件形成为使得暗线缺陷不会影响发光系统的效率。

公开(公告)号：WO2007073449A1

公开(公告)日：2007-06-28

申请号：PCT/US2006/042614

申请日：2006-10-31

Applicant: 3M INNOVATIVE PROPERTIES COMPANY

Inventor： SUN, Xiaoguang ,  MILLER, Thomas J., ,  HAASE, Michael, A.,

IPC: B32B9/04

CPC classification number: H01L31/1032 ,  H01L31/0296 ,  H01L31/03046 ,  H01L31/1035 ,  H01L33/10 ,  H01S5/183 ,  Y02E10/544

Abstract: A layered construction is provided comprising an InP substrate and alternating layers of II-VI and III-V materials. The alternating layers of II VI and III-V materials are typically lattice-matched or pseudomorphic to the InP substrate. Typically the II-VI material is selected from CdZnSe, CdMgZnSe, BeZnTe, or BeMgZnTe alloys, and most typically Cd x Zn 1 -xSe where x is between 0.55 and 0.57. Typically the III-V material is selected from InAlAs or AlInGaAs alloys, and most typically InP or In y Al1- y As where y is between 0.53 and 0.57. The layered construction can form one or more distributed Bragg reflectors (DBR's). In another aspect, the invention provides a layered construction comprising an InP substrate and a distributed Bragg reflector (DBR) having a reflectivity of 95% or greater comprising no more than 15 layer pairs of epitaxial semiconductor materials. In another aspect, the invention provides a laser or a photodetector comprising a layered construction.

Abstract translation: 提供了包括InP衬底和II-VI和III-V材料的交替层的分层结构。 II VI和III-V材料的交替层通常与InP衬底晶格匹配或伪构。 通常，II-VI材料选自CdZnSe，CdMgZnSe，BeZnTe或BeMgZnTe合金，以及最典型的Cd x Zn 1-x Se，其中x在0.55和0.57之间。 通常，III-V材料选自InAlAs或AlInGaAs合金，并且最典型的是InP或In y y Al y y y，其中y在0.53和0.57之间。 分层结构可以形成一个或多个分布式布拉格反射器（DBR）。 另一方面，本发明提供了包括InP衬底和分布布拉格反射器（DBR）的分层结构，其具有95％或更大的反射率，包括不超过15层的外延半导体材料。 另一方面，本发明提供一种激光器或包括分层结构的光电检测器。

公开(公告)号：WO2010129464A1

公开(公告)日：2010-11-11

申请号：PCT/US2010/033379

申请日：2010-05-03

Applicant: 3M INNOVATIVE PROPERTIES COMPANY ,  SMITH, Terry, L. ,  LEATHERDALE, Catherine, A. ,  HAASE, Michael, A. ,  MILLER, Thomas, J. ,  SUN, Xiaoguang ,  YANG, Zhaohui ,  BALLEN, Todd, A. ,  BARNES, Amy, S.

Inventor： SMITH, Terry, L. ,  LEATHERDALE, Catherine, A. ,  HAASE, Michael, A. ,  MILLER, Thomas, J. ,  SUN, Xiaoguang ,  YANG, Zhaohui ,  BALLEN, Todd, A. ,  BARNES, Amy, S.

IPC: H01L33/50

CPC classification number: H01L31/055 ,  H01L33/0079 ,  H01L33/502 ,  H01L2224/48463 ,  H01L2933/0041 ,  H05B33/10 ,  Y02E10/52

Abstract: Re-emitting semiconductor constructions (RSCs) for use with LEDs, and related devices, systems, and methods are disclosed. A method of fabrication includes providing a semiconductor substrate, forming on a first side of the substrate a semiconductor layer stack, attaching a carrier window to the stack, and removing the substrate after the attaching step. The stack includes an active region adapted to convert light at a first wavelength λ 1 to visible light at a second wavelength λ 2 , the active region including at least a first potential well. The attaching step is carried out such that the stack is disposed between the substrate and the carrier window, which is transparent to the second wavelength λ 2 . The carrier window may also have a lateral dimension greater than that of the stack. The removal step is carried out so as to provide an RSC carrier device that includes the carrier window and the stack.

Abstract translation: 公开了与LED一起使用的重新发射半导体结构（RSCs）以及相关的器件，系统和方法。 一种制造方法包括提供半导体衬底，在衬底的第一侧上形成半导体层堆叠，将载体窗口附接到堆叠，以及在附接步骤之后移除衬底。 所述堆叠包括适于将第一波长λ1的光转换成第二波长λ2的可见光的有源区域，所述有源区域至少包括第一势阱。 执行安装步骤，使得堆叠被布置在衬底和对第二波长λ2透明的载体窗口之间。 载体窗口也可以具有大于堆叠的横向尺寸的横向尺寸。 执行去除步骤以提供包括载体窗口和堆叠的RSC载体装置。

公开(公告)号：WO2010027648A8

公开(公告)日：2010-03-11

申请号：PCT/US2009/054140

申请日：2009-08-18

Applicant: 3M INNOVATIVE PROPERTIES COMPANY ,  HAASE , Michael A . ,  MILLER, Thomas J . ,  SUN, Xiaoguang

Inventor： HAASE , Michael A . ,  MILLER, Thomas J . ,  SUN, Xiaoguang

IPC: H01S5/04 ,  H01S5/183 ,  H01S5/347

Abstract: Light sources are disclosed. A disclosed light source includes a III-V based pump light source (170) that includes nitrogen and emits light at a first wavelength. The light source further includes a vertical cavity surface emitting laser (VCSEL) that converts at least a portion of the first wavelength light (174) emitted by the pump light surce (170) to at least a partially coherent light at a second wavelength (176). The VCSEL includes first and second mirrors (120, 160) that form an optical cavity for light at the second wavelength. The first mirror (120) is substantially reflective at the second wavelength and includes a first multilayer slfack. The second mirror (160) is substantially transmissive at the first wavelength and partially reflective and partially transmissive at the second wavelength. The second mirror includes a second multilayer stack. The VCSEL further includes a semiconductor multilayer stack (130) that is disposed between the first and second mirrors and converts at least a portion of the first wavelength light to the second wavelength light. The semiconductor multilayer stack (130) includes a quantum well that includes a Cd(Mg)ZnSe alloy.

公开(公告)号：WO2009085594A2

公开(公告)日：2009-07-09

申请号：PCT/US2008/086060

申请日：2008-12-09

Applicant: 3M INNOVATIVE PROPERTIES COMPANY ,  SUN, Xiaoguang ,  HAASE, Michael A. ,  MILLER, Thomas J. ,  SMITH, Terry L. ,  KELLEY, Tommie W. ,  LEATHERDALE, Catherine A.

Inventor： SUN, Xiaoguang ,  HAASE, Michael A. ,  MILLER, Thomas J. ,  SMITH, Terry L. ,  KELLEY, Tommie W. ,  LEATHERDALE, Catherine A.

IPC: H01L33/00

CPC classification number: H01L27/156 ,  H01L33/0079 ,  H01L33/505

Abstract: An arrangement of light sources is attached to a semiconductor wavelength converter. Each light source emits light at a respective peak wavelength, and the arrangement of light sources is characterized by a first range of peak wavelengths. The semiconductor wavelength converter is characterized by a second range of peak wavelengths when pumped by the arrangement of light sources. The second range of peak wavelengths is narrower than the first range of peak wavelengths. The semiconductor wavelength converter is characterized by an absorption edge having a wavelength longer than the longest peak wavelength of the light sources. The wavelength converter may also be used for reducing the wavelength variation in the output from an extended light source.

Abstract translation: 光源的布置被连接到半导体波长转换器。 每个光源以各自的峰值波长发射光，并且光源的布置由峰值波长的第一范围表征。 半导体波长转换器的特征在于当由光源布置泵浦时第二范围的峰值波长。 第二范围的峰值波长比第一范围的峰值波长窄。 半导体波长转换器的特征在于具有比光源的最长峰值波长更长的波长的吸收边缘。 波长转换器也可以用于减少来自扩展光源的输出的波长变化。