公开(公告)号：US20150155700A1

公开(公告)日：2015-06-04

申请号：US14559222

申请日：2014-12-03

Applicant: ABB Oy

Inventor： Rodrigo Alonso ALVAREZ VALENZUELA ,  Ignacio Lizama ,  Steffen Bernet ,  Matti Laitinen

IPC: H02H3/08

CPC classification number: H02H3/08 ,  H03K17/0822

Abstract: A method and apparatus are provided for a power semiconductor switch. A current through the switch is responsive to a control terminal voltage at a control terminal of the switch, and the control terminal voltage is driven by a driver unit. The method includes measuring or estimating the current based on a bond voltage of the switch, detecting a short circuit by comparing the measured or estimated current to a short circuit current limit, controlling an on-state voltage level of the control terminal voltage based on the comparison to limit the current through the switch during the short circuit, and controlling the control terminal voltage to an off-state voltage level to turn the switch off. The on-state voltage level voltage is controlled by pulse-width modulating the output of the driver unit. A switching frequency of the modulation is at least the cut-off frequency of low-pass characteristics of the control terminal.

Abstract translation: 为功率半导体开关提供了一种方法和装置。 通过开关的电流响应于开关的控制端子处的控制端子电压，并且控制端子电压由驱动器单元驱动。 该方法包括基于开关的接合电压来测量或估计电流，通过将测量或估计电流与短路电流限制进行比较来检测短路，基于控制端电压控制导通状态电压电平 比较以限制在短路期间通过开关的电流，并且将控制端电压控制到截止电压电平以使开关断开。 通过脉冲宽度调制驱动器单元的输出来控制导通状态电压电平。 调制的开关频率至少为控制端子的低通特性的截止频率。