公开(公告)号：ZA949656B

公开(公告)日：1995-08-16

申请号：ZA949656

申请日：1994-12-05

Applicant: ABB RESEARCH LTD

Inventor： HERBST INGO ,  PIETSCH RALF-DIETER

IPC: H01H33/64 ,  H01B9/06 ,  H01H33/53 ,  H02B13/045 ,  H02G5/06 ,  H02B ,  C09D

公开(公告)号：NO944868A

公开(公告)日：1995-06-29

申请号：NO944868

申请日：1994-12-15

Applicant: ABB RESEARCH LTD

Inventor： HERBST INGO ,  PIETSCH RALF-DIETER

IPC: H01H33/64 ,  H02G5/06 ,  H02B13/045

CPC classification number: H02G5/065 ,  Y10T428/239 ,  Y10T428/30 ,  Y10T428/31703

公开(公告)号：NO944868D0

公开(公告)日：1994-12-15

申请号：NO944868

申请日：1994-12-15

Applicant: ABB RESEARCH LTD

Inventor： HERBST INGO ,  PIETSCH RALF-DIETER

IPC: H01H33/64 ,  H01B9/06 ,  H01H33/53 ,  H02B13/045 ,  H02G5/06 ,  H02B

公开(公告)号：ZA9409656B

公开(公告)日：1995-08-16

申请号：ZA9409656

申请日：1994-12-05

Applicant: ABB RESEARCH LTD

Inventor： HERBST INGO ,  PIETSCH RALF-DIETER

IPC: H01H33/64 ,  H02G5/06 ,  H02B ,  C09D

CPC classification number: H02G5/065 ,  Y10T428/239 ,  Y10T428/30 ,  Y10T428/31703

公开(公告)号：NO944868L

公开(公告)日：1995-06-29

申请号：NO944868

申请日：1994-12-15

Applicant: ABB RESEARCH LTD

Inventor： HERBST INGO ,  PIETSCH RALF-DIETER

IPC: H01H33/64 ,  H01B9/06 ,  H01H33/53 ,  H02B13/045 ,  H02G5/06

公开(公告)号：CA2137104A1

公开(公告)日：1995-06-29

申请号：CA2137104

申请日：1994-12-01

Applicant: ABB RESEARCH LTD

Inventor： HERBST INGO ,  PIETSCH RALF-DIETER

IPC: H01H33/64 ,  H01B9/06 ,  H01H33/53 ,  H02B13/045 ,  H02G5/06 ,  H05K5/04

Abstract: This high-voltage installation has a metallic enclosure (1) which is filled with insulating gas and surrounds voltage-carrying active parts. In addition, it has at least one at least partial protective coating (7, 9, 10) either on the internal surface of the enclosure (1) or on the external surface over the active parts, or at least one at least partial protective coating (7, 9, 10) both on the internal surface of the enclosure (1) and on the external surface of the active parts. It is intended to provide a high-voltage installation in which free electrons are also reliably removed from the insulating gaps and in which partial discharges generated by free particles are reduced to noncritical values of intensity. This is achieved in that the at least one protective coating (7, 9, 10) is doped with at least one fullerene which absorbs free electrons. Protective coatings which have a surface of vapor-deposited fullerene are also particularly suitable.