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1.发明公开
公开(公告)号：EP3211435A1
公开(公告)日：2017-08-30
申请号：EP16157499.1
申请日：2016-02-26
Applicant: ABB Schweiz AG
Inventor： Podzemny, Jaromir , Pavlas, Marek , Javora, Radek
Abstract: Voltage measuring device for high or medium voltage use, with a voltage divider, moulded into an insulating body, wherein the voltage measuring device contains an internal electrode (3), which is cast into the insulation material (8) under an outer conductive or semiconductive layer (4), and that the internal electrode (3) is electrically connected with the outer conductive or semi-conductive layer or housing (4).
Abstract translation: 用于高压或中压用途的电压测量装置，带有分压器，模制成绝缘体，其中电压测量装置包含内部电极（3），该内部电极在外部导电或半导体 层（4），并且内部电极（3）与外部导电或半导电层或外壳（4）电连接。
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公开(公告)号：EP3699606A1
公开(公告)日：2020-08-26
申请号：EP19158959.7
申请日：2019-02-22
Applicant: ABB Schweiz AG
Inventor： Javora, Radek , Pavlas, Marek
Abstract: The present invention relates to a protection circuit for a medium voltage or high voltage transformer. The protection circuit comprises a sensing device (10), a measurement device (11) and a switching device (12). The sensing device is configured to be connected between a primary winding (1) of a voltage transformer and ground potential. The measurement device is connected to the sensing device and the measurement device is configured to measure at least one parameter sensed by the sensing device. The protection circuit is configured to analyse the measured at least one parameter sensed by the sensing device. The protection circuit is configured to generate a trip signal based on the analysis of the measured at least one parameter sensed by the sensing device. The switching device is configured to receive the generated trip signal and disconnect the voltage transformer from a high voltage potential.
Fig. 3-
公开(公告)号：EP3699602A1
公开(公告)日：2020-08-26
申请号：EP19158958.9
申请日：2019-02-22
Applicant: ABB Schweiz AG
Inventor： Javora, Radek , Pavlas, Marek
IPC: G01R15/04
Abstract: The present invention relates to a voltage sensor for medium voltage or high voltage measurements. The voltage sensor comprises a high voltage impedance (3), a low voltage impedance (5), and at least one part comprising semiconductor material. The high voltage impedance is configured to be electrically connected to a part of a system at high voltage potential. The high voltage impedance forms a first part of a voltage divider. The low voltage impedance is configured to be electrically connected to part of a system at ground potential. The low voltage impedance forms a second part of the voltage divider. The high voltage impedance is electrically connected to the low voltage impedance such that an axis is defined extending through the high voltage impedance and the low voltage impedance. The at least one part comprising semiconductor material surrounds at least one part of the axis.
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