公开(公告)号：US09324708B2

公开(公告)日：2016-04-26

申请号：US13716803

申请日：2012-12-17

Applicant: ABB Technology AG

Inventor： Liutauras Storasta ,  Arnost Kopta ,  Munaf Rahimo

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/10 ,  H01L29/739

CPC classification number: H01L27/088 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/7395 ,  H01L29/7396

Abstract: An exemplary power semiconductor device with a wafer having an emitter electrode on an emitter side and a collector electrode on a collector side, an (n-) doped drift layer, an n-doped first region, a p-doped base layer, an n-doped source region, and a gate electrode, all of which being formed between the emitter and collector electrodes. The emitter electrode contacts the base layer and the source region within a contact area. An active semiconductor cell is formed within the wafer, and includes layers that lie in orthogonal projection with respect to the emitter side of the contact area of the emitter electrode. The device also includes a p-doped well, which is arranged in the same plane as the base layer, but outside the active cell. The well is electrically connected to the emitter electrode at least one of directly or via the base layer.

Abstract translation: 具有在发射极侧具有发射极的晶片和集电极侧的集电极，第（n-）掺杂漂移层，n掺杂的第一区，p掺杂的基极层，n 掺杂的源极区和栅电极，所有这些都形成在发射极和集电极之间。 发射极电极在接触区域内接触基极层和源极区域。 有源半导体单元形成在晶片内，并且包括相对于发射极电极的接触区域的发射极侧处于正交投影的层。 该器件还包括一个p掺杂的阱，它被布置在与基极层相同的平面中，但是在活性电池的外部。 阱直接或经由基底层至少一个电连接到发射极电极。

公开(公告)号：US20130099279A1

公开(公告)日：2013-04-25

申请号：US13716803

申请日：2012-12-17

Applicant: ABB Technology AG

Inventor： Liutauras Storasta ,  Arnost Kopta ,  Munaf Rahimo

IPC: H01L27/088

CPC classification number: H01L27/088 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/7395 ,  H01L29/7396

Abstract: An exemplary power semiconductor device with a wafer having an emitter electrode on an emitter side and a collector electrode on a collector side, an (n-) doped drift layer, an n-doped first region, a p-doped base layer, an n-doped source region, and a gate electrode, all of which being formed between the emitter and collector electrodes. The emitter electrode contacts the base layer and the source region within a contact area. An active semiconductor cell is formed within the wafer, and includes layers that lie in orthogonal projection with respect to the emitter side of the contact area of the emitter electrode. The device also includes a p-doped well, which is arranged in the same plane as the base layer, but outside the active cell. The well is electrically connected to the emitter electrode at least one of directly or via the base layer.

Abstract translation: 具有在发射极侧具有发射极的晶片和集电极侧的集电极，第（n-）掺杂漂移层，n掺杂的第一区，p掺杂的基极层，n 掺杂的源极区和栅电极，所有这些都形成在发射极和集电极之间。 发射极电极在接触区域内接触基极层和源极区域。 有源半导体单元形成在晶片内，并且包括相对于发射极电极的接触区域的发射极侧处于正交投影的层。 该器件还包括一个p掺杂的阱，它被布置在与基极层相同的平面中，但是在活性电池的外部。 阱直接或经由基底层至少一个电连接到发射极电极。