公开(公告)号：JPH08255768A

公开(公告)日：1996-10-01

申请号：JP1320396

申请日：1996-01-29

Applicant: ADVANCED MICRO DEVICES INC

Inventor： EMU EMU FUARAHAANI ,  SHIYAIAMU GARUGU

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L21/768 ,  H01L23/485 ,  H01L29/45 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To increase the coherency of a TiN/Ti/TiSix adhesive layer by forming a Ti layer on a semiconductor Si wafer by the sputter deposition method and by forming specifically controlled nitride and silicide by a rapid heat-treatment method using NH3 . SOLUTION: An Si wafer 10 has a dielectric 12 being formed on a field region 11 and a gate conductor 14, and the gate conductor 14 and a junction region 16 are exposed by a contact hole being formed on the dielectric 12. A thin gate oxide 24 is included between the conductor 14 and a channel 26 of a substrate 18. Then, a Ti layer 3 is deposited on the dielectric 12, the inner wall of the contact hole, the conductor 14, and the region 16. Then, the wafer 10 is subjected to a heat treatment that consists of three annealing cycles or steps and where each cycle is performed at each specific temperature in NH3 . Then, the thickness of TiN barrier and TiSix silicide in regions 5 and 6 is set to a specific thickness, thus increasing coherency.