公开(公告)号：JPH06259981A

公开(公告)日：1994-09-16

申请号：JP26323693

申请日：1993-10-21

Applicant: ADVANCED MICRO DEVICES INC

Inventor： MAIKERU EI BAN BASUKAAKU ,  JIYONII CHIYANNRII CHIEN ,  CHIYUN KEI CHIYAN ,  RII II KURIIBURANDO ,  ANTONIO MONTARUBO

IPC: G11C17/00 ,  G11C16/06 ,  G11C16/30 ,  H02M3/07 ,  H03K19/096

Abstract: PURPOSE: To provide a drain power source which generates an adjusted positive potential during programming and gives it to the drain area of a selected memory cell through a bit line of an array of a Flash EEPROM memory cells. CONSTITUTION: The drain power source includes a charge pump means 20 which consists of a plurality of charge pump parts 20a to 20h driven by a plurality of alternating clock signals and properly generates a positive voltage in the high level. Canceling means 26 and 28 are connected to respective charge pump parts to effectively cancel the threshold voltage drop in the charge pump circuit. An adjuster circuit 22 responding to the adjusted positive potential in an output node and a reference voltage is given to generated a control voltage, and the positive voltage in the high level on the output node is controlled.

公开(公告)号：JPH06259980A

公开(公告)日：1994-09-16

申请号：JP26249593

申请日：1993-10-20

Applicant: ADVANCED MICRO DEVICES INC

Inventor： MAIKERU EI BAN BASUKAAKU ,  JIYONII CHIYANNRII CHIEN ,  CHIYUN KEI CHIYAN ,  RII II KURIIBURANDO ,  ANTONIO MONTARUBO

IPC: G11C17/00 ,  G11C5/14 ,  G11C16/06 ,  H02M3/07 ,  H03K19/096

Abstract: PURPOSE: To adjust a negative potential independent of a supply potential by generating a negative comparator signal in response to a high negative voltage and a reference voltage, and to cancel the drop of a threshold voltage. CONSTITUTION: A negative power source 10 uses a P-channel charge pump circuit 12 to generate a relatively high negative voltage, and the voltage on the gate of a bus transistor TR of the circuit 12 is fluctuated in response to a negative clock circuit to cancel a threshold voltage drop V1 P. The power source 10 includes a negative adjuster circuit 16, and a high negative gate voltage is adjusted with respect to an external potential VCC so that an erasing field is independent of the supply voltage VCC. Further, the power source 10 includes a protection circuit 18 to property protect the oxide of a P-channel pull-up element in a negative well circuit 20.

公开(公告)号：JPH06259979A

公开(公告)日：1994-09-16

申请号：JP26249493

申请日：1993-10-20

Applicant: ADVANCED MICRO DEVICES INC

Inventor： MAIKERU EI BAN BASUKAAKU ,  JIYONII CHIYANNRII CHIEN ,  CHIYUN KEI CHIYAN ,  RII II KURIIBURANDO ,  ANTONIO MONTARUBO

IPC: G11C17/00 ,  G05F3/24 ,  G11C16/06 ,  G11C16/12 ,  G11C16/30 ,  H02M3/07 ,  H03K17/06 ,  H03K17/14 ,  H03K19/096

Abstract: PURPOSE: To adjust an independent positive potential by generating a positive comparator signal in response to a high positive potential and a reference potential, to give proper voltage to a selected P channel transistor and to protect an oxide. CONSTITUTION: A positive power source 10 generates a relatively high positive voltage VPP and a relatively low negative voltage VNP and is connected to a word line WLn through a row decoder 14. The row decoder circuit 14 gives the high positive voltage to the control gate of a selected memory cell transistor TR through the word line WLn during programming. The circuit 14 pulls down the word line, which is connected to the control gate of a non-selected memory cell TR, to an earth potential VSS. A positive or VPP power source includes a negative protective pump circuit 16, and the circuit 14 hinders forward bias of a substrate diode during erasure. Further, a proper voltage is given protect the oxide of a P-channel transistor itself.