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公开(公告)号：JPH06204496A
公开(公告)日：1994-07-22
申请号：JP27083593
申请日：1993-10-28
Applicant: ADVANCED MICRO DEVICES INC
Inventor： MAAKU AI GAADONAA , HENRII JIMU FURUFUOODO JIYUNIA , JIEI JIEI SHIITON
IPC: H01L21/28 , H01L21/316 , H01L21/762 , H01L21/8247 , H01L29/788 , H01L29/792
Abstract: PURPOSE: To accomplish a method of growing a high quality oxide film on the exposed surface of a semiconductor by a method wherein the layer formed on the semiconductor main body is annealed through the first insulating film and a heavily doped region is formed. CONSTITUTION: The P-well active region 110, wherein a P-well field oxide film 102 is formed on a substrate 100, is prescribed, a KOOI oxide film 104 is grown, a photoresist is provided, a part of which is exposed, phosphorus 108 is injected into the substrate 100 of the P-well active region 110 passing through the exposed KOOI oxide film and a phosphorus injected layer 120 is formed. The part having damaged KOOI oxide film is etched, an N region is formed by redistributing and activating phosphorus, the KOOI films 104 and 122 are removed by etching, and an N oxide region 140 is formed. Accordingly, an oxide film is finally grown from the N surface 184 on the N region 140 by conducting an oxidizing step, and a high quality oxide film is obtained.
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Patent Agency Ranking
公开(公告)号：JPH06196716A
公开(公告)日：1994-07-15
申请号：JP25064293
申请日：1993-10-06
Applicant: ADVANCED MICRO DEVICES INC
Inventor： MAAKU AI GAADONAA , HENRII JIMU FURUFUOODO JIYUNIA
IPC: H01L21/28 , H01L21/316 , H01L21/336 , H01L21/8247 , H01L27/115 , H01L29/51 , H01L29/788 , H01L29/792
Abstract: PURPOSE: To improve the oxide films in a EEPROM device quality including a tunnel oxide film, by a method wherein a sacrificial oxide film is annealed and removed by etching, and a final oxide film is grown. CONSTITUTION: A P well active region 110 is specified by a well field oxide film 102 on a substrate 100, a KOOI oxide film 104 is grown, a photoresist layer is provided so as to selectively cover the oxide film 104, phosphorus 108 is implanted into the substrate 100 through the KOOI oxide film 104 to form a phosphorus-implanted layer 120. A damaged part of the KOOI oxide film is turned to a KOOI oxide film 122 by etching, annealing is carried out so as to enable phosphorus to be distributed and activated to form an N layer on a P well, the KOOI oxide films 104 and 122 are removed by etching, and a wide N region 140 is formed. Therefore, a gate oxide film 160 is formed on the P well active region 110 and subjected to annealing VT1 implantations 162 are implanted into all wafer, the gate oxide film 160 is turned to a gate oxide film 200 by etching, and lastly an oxide film of high quality can be realized through an oxidation step.
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公开(公告)号：JPH06204205A
公开(公告)日：1994-07-22
申请号：JP22237893
申请日：1993-09-07
Applicant: ADVANCED MICRO DEVICES INC
Inventor： HENRII JIMU FURUFUOODO JIYUNIA , MAAKU AI GAADONAA
IPC: H01L21/306 , H01L21/311 , H01L21/762
Abstract: PURPOSE: To provide a method of avoiding overetching, which is performed on the surface part of a semiconductor material main body. CONSTITUTION: Oxide films 14 and 12 are removed from the surface of a semiconductor material main body, which has the thick oxide film 14 and the thin oxide film 12 adjacent to the film 14, without performing overetching on the surface of the main body. Therefore, a method for avoiding the deterioration of the surface of the main body is disclosed. First, a photoresist layer 113 is deposited on the film 12 in such a way as to cover the film 12, then, the film 14 is left as one part of the film 14 is left and etched during a certain period in such a way that the thickness of the film 14 corresponds to that of the film 12. Then, the layer 113 covering the film 12 is removed without performing considerably etching on any of the residual part 115 of the film 14 and the film 12. Lastly, the film 12 and the residual part 115 of the film 14 can be removed without performing excessively overetching on the surface of the main body.
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公开(公告)号：JPH06204203A
公开(公告)日：1994-07-22
申请号：JP22094693
申请日：1993-09-06
Applicant: ADVANCED MICRO DEVICES INC
IPC: H01L21/306 , H01L21/311 , H01L21/762
Abstract: PURPOSE: To provide a method of avoiding an excess overetching, which is performed on the surface part of a semiconductor material main body. CONSTITUTION: Oxide films 14 and 12 are removed from the surface of a semiconductor material main body, which has the thick oxide film 14 and the thin oxide film 12 covered with a nitride film adjacent to the film 14, without performing an excess overetching on the surface of the main body. Therefore, a method for avoiding the deterioration of the surface of the main body is disclosed. First, the film 14 is left as one part of the film 14 is left and is etched during a certain period in such a way that the thickness of the film 14 corresponds to that of the film 12. Then, the nitride film 10 covering the film 12 is removed without performing considerably an etching on any of the residual part 115 of the film 14 and the film 12. Lastly, the film 12 and the residual part 115 of the film 14 can be removed from the surface of the main body without performing excessively the overetching on the surface of the main body.
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公开(公告)号：JPH08172138A
公开(公告)日：1996-07-02
申请号：JP18903795
申请日：1995-07-25
Applicant: ADVANCED MICRO DEVICES INC
Inventor： EICHI JIMU FURUFUOODO JIYUNIA , MAAKU AI GAADONAA
IPC: H01L21/28 , H01L21/316 , H01L21/336 , H01L21/8247 , H01L29/51 , H01L29/786 , H01L29/788 , H01L29/792
Abstract: PROBLEM TO BE SOLVED: To improve the quality of a very thin oxide layer by exposing a semiconductor to an environment for depositing an oxide after moving the initial oxide layer, at least partially, from a first surface region to form a first oxide layer on the first surface region and making thick the initial oxide layer formed on a second surface region. SOLUTION: An initial oxide layer is formed on first and second surface regions of a semiconductor body and then an initial oxide layer is removed, at least partially, from a region set on the first surface region. The semiconductor body is then exposed to an environment suitable for depositing an oxide to form a first oxide layer 200 above the first surface region of the semiconductor body. A second oxide layer 222 is also formed by increasing the thickness of the initial oxide layer formed above the second region. Subsequently, the semiconductor body is introduced to a nitrogen source so that the first and second oxide layers 220, 222 contain nitrogen at some concentration. For example, the first oxide layer 220 is a tunnel oxide layer and the second oxide layer 222 is a gate oxide layer.
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公开(公告)号：JPH07326622A
公开(公告)日：1995-12-12
申请号：JP4379795
申请日：1995-03-03
Applicant: ADVANCED MICRO DEVICES INC
IPC: H01L21/322
Abstract: PURPOSE: To ensue an excellent silicon surface characteristics by executing denuding before a process, and applying guttering upon formation of a field oxide film. CONSTITUTION: A silicon substrate 16 in which an oxygen atom 20 and an interlattice silicon atom 24 are incorporated, and then a substrate 16 is heated in a hydrogen atmosphere to 1100 deg.C or higher to outwardly diffuse the oxygen atom 20 and hence form a denuded zone 31 where there are substantially not existent the oxygen atom 20 and the interlattice silicon atom 24 in the surface 30 of the substrate 16. Prior to deposition of polysilicon, the substrate 16 is processed at a temperature of 1000 deg.C or lower to make minimum a movement of the oxygen atom 20 going into and out of the denuded zone 31 and a movement of the interlattice silicon atom 24 to the surface 30 of the substrate 16 from the denuded zone 31 and formation of the interlattice silicon atom 24. Thereafter, polysilicon is deposited on a gate oxide film formed on the surface of the substrate 16. Provided the gate oxide film is formed on a 180 Å 2 mm area, breakdown voltage becomers 20 V or higher.
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