公开(公告)号：JPH08255848A

公开(公告)日：1996-10-01

申请号：JP3182996

申请日：1996-02-20

Applicant: ADVANCED MICRO DEVICES INC

Inventor： SETSUDO ENU GUNAIMU ,  EICHI JIMU FURUFUOODO JIYUNIA

IPC: H01L21/8247 ,  H01L21/316 ,  H01L21/336 ,  H01L23/31 ,  H01L27/115 ,  H01L29/51 ,  H01L29/788 ,  H01L29/792

Abstract: PROBLEM TO BE SOLVED: To avoid the charge losing phenomenon by a method wherein a dielectric and dielectric/conductor are formed at a temperature not exceeding a specific value to avoid the formation of the positive-charged atoms in the structure encircling a floating gate. SOLUTION: A pair of dielectrics 70, 72 are formed on the exposed upper side of another pair of electrodes 68, 66. The dielectric layer 70 is formed as an oxide meeting the same requirement as that for the formation of the PECVD layer 66. Accordingly, the SOG layer 68 is held between the PECVD layer 66 and the other PECVD layer 70. In general, when an SOG is formed, considerable amount of hydrogen is produced. These hydrogen are destructed to be shifted as positively charged atoms to a floating conductor 60 operatively programmed at the negative potential. In such a constitution, the hydrogen containing layer such as the SOG layer 68 as well as the next layer to be formed thereon are formed at the temperature not exceeding 380 deg.C for avoiding the production of free hydrogen atoms and the shifting of these atoms to the floating conductors.