公开(公告)号：US3836989A

公开(公告)日：1974-09-17

申请号：US33273073

申请日：1973-02-15

Applicant: AGENCY IND SCIENCE TECHN

Inventor： TOMIZAWA K ,  MORISUE M ,  KATAOKA S ,  HASHIZUME N ,  KOMAMIYA Y

IPC: G11C21/00 ,  H01L47/02 ,  H03F3/55 ,  H03K19/08 ,  H03K17/72

CPC classification number: H03K19/08 ,  G11C21/00 ,  H01L47/02 ,  H03F3/55

Abstract: Disclosed is a semiconductor device comprising at least two semiconductor elements integrally connected by an insulator, each semiconductor showing negative differential conductivity under the influence of a high electric field. A high electric field domain or space charges which are generated in one of the semiconductor elements can be transferred to the other element by directly affecting the other element via an insulator.

Abstract translation: 公开了一种半导体器件，其包括由绝缘体整体连接的至少两个半导体元件，每个半导体在高电场的影响下显示出负的微分电导率。 在半导体元件之一中产生的高电场域或空间电荷可以通过绝缘体直接影响另一元件而被传递到另一元件。

公开(公告)号：US3766372A

公开(公告)日：1973-10-16

申请号：US3766372D

申请日：1971-05-14

Applicant: AGENCY IND SCIENCE TECHN

Inventor： KATAOKA S ,  HASHIZUME N ,  KOMAMIYA Y ,  MORISUE M ,  TATENO H ,  KAWASHIMA M

IPC: G06F7/50 ,  G06F7/505 ,  H01L29/00 ,  H01L47/02 ,  H03B9/12 ,  H03K3/02 ,  H03K19/02 ,  H03M7/00 ,  G06F7/385

CPC classification number: G06F7/505 ,  H01L29/00 ,  H01L47/02 ,  H03B9/12 ,  H03K3/02 ,  H03K19/02 ,  H03M7/00

Abstract: The invention disclosed is for a method and apparatus for controlling high electric field domain in a bulk semiconductor as well as an information processing method thereby. By means of a capacitive electrode, the high electric field domain may be either sustained or extinguished.

Abstract translation: 本发明公开了一种用于控制体半导体中的高电场域的方法和装置，以及由此产生的信息处理方法。 借助于电容电极，高电场域可以是持续的或熄灭的。