EVANESCENT WAVE SENSOR HAVING COMBINED LIGAND

    公开(公告)号:JP2006322939A

    公开(公告)日:2006-11-30

    申请号:JP2006138580

    申请日:2006-05-18

    Abstract: PROBLEM TO BE SOLVED: To provide new method for manufacturing a sensor equipped with ligands which specifically combines with any test body, and method/system using this sensor. SOLUTION: This invention provides an evanescent wave sensor equipped with ligands combined with sensor base material through triazole ring linker element, as well as the method for manufacturing the above evanescent wave sensor which includes a step to make 1st reactant element containing azide element to be in contact with 2nd reactant element containing alkyne element. This invention also provides the method for evaluating that the test body in sample has combined with the evanescent wave sensor by bringing the above sensor into contact with the sample to detect evanescent wave. Additionally, it provides kit and system for implementing the above method. COPYRIGHT: (C)2007,JPO&INPIT

    ORGANIC LIGHT-EMITTING DEVICE
    3.
    发明专利

    公开(公告)号:JP2002299057A

    公开(公告)日:2002-10-11

    申请号:JP2002081258

    申请日:2002-03-22

    Abstract: PROBLEM TO BE SOLVED: To provide an organic light-emitting device enabling prediction of the color of the light emitted. SOLUTION: This organic light-emitting device 100 emits a light of a prescribed wavelength λ, and has an anode layer 106, a cathode layer 112, an electroluminescence layer 110 arranged between the anode layer and the cathode layer, so as to be electrically connected to the anode layer and the cathode layer, and includes an organic light-emitting compound for generating light which includes the light, having the prescribed wave length by recombination of electron holes and electrons, a first reflector 104, a second reflector 112 separately arranged by an optical path length D from the first reflector, and the being partially reflective, and a spacer layer 108 composed of a transparent material in the wave length λ. When N is set as a positive integer, D=Nλ/2 is satisfied.

    Planar type resonant tunnel sensor device, its manufacturing method, and its usage
    4.
    发明专利
    Planar type resonant tunnel sensor device, its manufacturing method, and its usage 审中-公开
    平面型谐振隧道传感器装置及其制造方法及其应用

    公开(公告)号:JP2006292751A

    公开(公告)日:2006-10-26

    申请号:JP2006105979

    申请日:2006-04-07

    CPC classification number: G01Q30/02 B82Y15/00 B82Y35/00 G01N15/1031

    Abstract: PROBLEM TO BE SOLVED: To provide a resonance type tunnel spectrometer capable of relatively easily obtaining the perfect state density of a test sample.
    SOLUTION: This resonant tunnel sensor device 100 comprises a flat substrate, a first electrode 103 on the surface thereof, a second electrode 105 disposed on the surface of the flat substrate at a distance from the first electrode, and a moving means 107 and the like for moving the sample relatively to the first electrode and second electrode. The first and second electrodes are separated from each other with a nano dimension gap 106 of about 1-8 nm, for example.
    COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题:提供能够相对容易地获得测试样品的完美状态密度的共振型隧道光谱仪。 解决方案:该谐振隧道传感器装置100包括平坦基板,其表面上的第一电极103,设置在与第一电极相距一定距离的平坦基板的表面上的第二电极105和移动装置107 和类似物,用于相对于第一电极和第二电极移动样品。 例如,第一和第二电极通过约1-8nm的纳米尺度间隙106彼此分离。 版权所有(C)2007,JPO&INPIT

    STRUCTURE FOR IMPROVING RELIABILITY OF ORGANIC AND POLYMER LUMINESCENT DEVICE, AND ITS MANUFACTURE

    公开(公告)号:JP2000164357A

    公开(公告)日:2000-06-16

    申请号:JP33147699

    申请日:1999-11-22

    Abstract: PROBLEM TO BE SOLVED: To improve the reliability preventing the flow of large current near short-circuiting by arranging an organic stack between an electrode and a current self-limiting structure. SOLUTION: In an organic luminescent device 100, a transparent conductive positive electrode 102 of the indium tin oxide(ITO) is adhered onto a transparent substrate 101 of glass or plastic so as to form a positive terminal. A current self-limiting(CSL) structure 105 is adhered onto the ITO positive electrode 102 so as to obtain the thickness enough to hinder the excessive current flow near short-circuiting. An organic stack 109 including a hole carrier layer 104, an electroluminecent layer 106 and an electron carrier layer 107 is adhered onto the CSL structure 105, and 300-500 nm of thickness is formed. A negative electrode layer 108 for transmitting the light is formed on the organic stack 109, and the negative electrode layer 108 is formed of a metal having a relatively low function such as Mg, Ca and Yb, and it is desirably formed translucent.

    Integrated opto-electric spr sensor
    8.
    发明专利
    Integrated opto-electric spr sensor 审中-公开
    集成光电SPR传感器

    公开(公告)号:JP2007071877A

    公开(公告)日:2007-03-22

    申请号:JP2006241376

    申请日:2006-09-06

    CPC classification number: G01N21/553 G01N21/253

    Abstract: PROBLEM TO BE SOLVED: To eliminate the need for the output optical path of conventional SPR measurement systems.
    SOLUTION: The integrated opto-electric sensor comprises a wavenumber matching structure integrated on a silicon substrate, a first conductive electrode that is adjacent to one of a lightly doped and an undoped region in the silicon substrate to form a Schottky junction, a dielectric adjacent to the second surface of the first conductive electrode, and a second conductive electrode formed at the silicon substrate. The first conductive electrode and second conductive electrode provide coupling for a detected signal that is provided in response to the illumination of the wavenumber matching structure by an optical signal.
    COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题:消除对常规SPR测量系统的输出光路的需要。 解决方案:集成光电传感器包括集成在硅衬底上的波数匹配结构,与硅衬底中的轻掺杂区域和未掺杂区域之一相邻以形成肖特基结的第一导电电极, 邻近第一导电电极的第二表面的电介质和形成在硅衬底上的第二导电电极。 第一导电电极和第二导电电极为通过光信号响应于波数匹配结构的照明而提供的检测信号提供耦合。 版权所有(C)2007,JPO&INPIT

    Evanescent wave sensor having bonded ligand
    9.
    发明专利
    Evanescent wave sensor having bonded ligand 审中-公开
    具有绑定配线的EVANESCENT波形传感器

    公开(公告)号:JP2006337365A

    公开(公告)日:2006-12-14

    申请号:JP2006150976

    申请日:2006-05-31

    CPC classification number: G01N21/553 G01N33/54353 Y10S435/808 Y10S436/805

    Abstract: PROBLEM TO BE SOLVED: To provide a new method for manufacturing a sensor having ligand specifically bonded to a target specimen, and to provide a method and a device that uses the sensor. SOLUTION: The evanescent wave sensor is provided, which has ligand bonded to a sensor base via an NCYX linker component. The method for manufacturing the evanescent wave sensor is also provided and includes a step for bringing a first reactive component, having an isocyanate (or isothiocyanate) component into contact with a second reactive component, having hydroxy, thiol, or an amino component. A method is also provided to evaluate the bonding of specimens in a sample to the sensor through detecting of the evanescent waves by bringing the evanescent wave sensor into contact with the sample. A kit and a system for executing the method are also provided. COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题:提供一种用于制造具有特异性结合到目标样品的配体的传感器的新方法,并提供使用该传感器的方法和装置。 解决方案:提供ev逝波传感器,其具有通过NCYX连接器部件键合到传感器基底的配体。 还提供了制造ev逝波传感器的方法,并且包括使具有异氰酸酯(或异硫氰酸酯)成分的第一反应成分与具有羟基,硫醇或氨基成分的第二反应性成分接触的步骤。 还提供了一种方法,用于通过使ev逝波传感器与样品接触来检测ev逝波,以评估样品中的样品与传感器的接合。 还提供了用于执行该方法的套件和系统。 版权所有(C)2007,JPO&INPIT

    Wavelength tuning intensity measurement for surface plasmon resonance sensor
    10.
    发明专利
    Wavelength tuning intensity measurement for surface plasmon resonance sensor 审中-公开
    表面等离子体共振传感器的波长调谐强度测量

    公开(公告)号:JP2005321385A

    公开(公告)日:2005-11-17

    申请号:JP2005118388

    申请日:2005-04-15

    CPC classification number: G01N21/553

    Abstract: PROBLEM TO BE SOLVED: To precisely detect a change in a refractive index of an analyte.
    SOLUTION: An SPR sensor is illuminated over a wavelength range where an incident signal exists. Intensity of a reflected signal from the SPR sensor is detected with a wavelength discrimination characteristic imparted to the incident signal or the reflected signal. The wavelength discrimination characteristic is imparted in a tuning rate preliminarily assigned within the wavelength range. Then, the detected intensity is sampled at a sampling rate, and an intensity profile related to the SPR sensor is generated from the sampling in a wavelength resolution determined by the tuning rate and a sampling rate.
    COPYRIGHT: (C)2006,JPO&NCIPI

    Abstract translation: 要解决的问题:精确地检测分析物的折射率的变化。

    解决方案:SPR传感器在存在入射信号的波长范围内照明。 利用赋予入射信号或反射信号的波长鉴别特性来检测来自SPR传感器的反射信号的强度。 波长鉴别特性被赋予预先在波长范围内分配的调谐率。 然后,以采样率对检测到的强度进行采样,并且通过由调谐率和采样率确定的波长分辨率的采样产生与SPR传感器相关的强度分布。 版权所有(C)2006,JPO&NCIPI

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