公开(公告)号：JP2002123920A

公开(公告)日：2002-04-26

申请号：JP2000311019

申请日：2000-10-11

Applicant: AKITA PREFECTURE

Inventor： SUZUKI YOSHIO ,  HONDA NAOKI ,  OUCHI KAZUHIRO

IPC: C23C14/06 ,  G11B5/64 ,  G11B5/65 ,  G11B5/66 ,  G11B5/667 ,  G11B5/73 ,  G11B5/738 ,  H01F10/16 ,  H01F10/30

Abstract: PROBLEM TO BE SOLVED: To provide a recording medium which realizes high-density information recording, particularly high recording resolution for magnetic recording. SOLUTION: An information recording layer made of a mixture of a L10 regular alloy selected from the following group (A) and MgO is used for a perpendicular magnetic recording medium. The group (A) includes FePt regular alloy, CoPt regular alloy, FePd regular alloy and alloys of these. The information recording layer has a fine magnetic domain structure and makes high- density recording possible as indicated by the reproduction output spectrum showing the result of the evaluation of recording and reproducing in one example of the magnetic recording medium. The medium can be produced at a lower film forming temperature compared to a L10 regular alloy mixture thin film by conventional techniques.

公开(公告)号：JP2001101645A

公开(公告)日：2001-04-13

申请号：JP27641499

申请日：1999-09-29

Applicant: AKITA PREFECTURE

Inventor： SUZUKI YOSHIO ,  HONDA NAOKI ,  OUCHI KAZUHIRO

IPC: G11B5/667 ,  C23C14/18 ,  C23C14/34 ,  G11B5/00 ,  G11B5/64 ,  G11B5/66 ,  G11B5/73 ,  G11B5/851 ,  H01F10/12

Abstract: PROBLEM TO BE SOLVED: To provide an information recording medium achieving high reproducing output and high resolution in high density information recording, especially in magnetic recording. SOLUTION: An information recording medium having a layer 30 consisting of a soft magnetic material, a layer 20 consisting of a non-magnetic material and a L10 regular alloy information recording layer 10 selected from a group A which are formed successively, is manufactured by a specified method. The group A consists of a FePt regular alloy, a CoPt regular alloy or a FePd regular alloy and an alloy consisting thereof.

公开(公告)号：JP2012059725A

公开(公告)日：2012-03-22

申请号：JP2010198159

申请日：2010-09-03

Applicant: Akita Prefecture ,  Tdk Corp ,  Tdk株式会社 ,  秋田県

Inventor： SASAKI TOMOO ,  OIKAWA TORU ,  NOGUCHI KIYOSHI ,  SUZUKI YOSHIO

IPC: H01L29/82 ,  G11B5/39 ,  H01L21/8246 ,  H01L27/105

CPC classification number: H01L29/66984 ,  G11C11/161 ,  G11C11/1675 ,  H01L29/82

Abstract: PROBLEM TO BE SOLVED: To provide a spin injection electrode structure, a spin conduction element, and a spin conduction device capable of performing spin injecting in a silicon channel layer at room temperature.SOLUTION: A spin injection electrode structure IE includes: a silicon channel layer 12; a first magnesium oxide film 13A provided on a first portion of the silicon channel layer 12; and a first ferromagnetic layer 14A provided on the first magnesium oxide film 13A. In the first magnesium oxide film 13A, there partially exists a first lattice matching portion P lattice-matched with both of the silicon channel layer 12 and the first ferromagnetic layer 14A.

Abstract translation: 要解决的问题：提供能够在室温下在硅沟道层中进行自旋注入的自旋注入电极结构，自旋导电元件和自旋导电器件。 解决方案：自旋注入电极结构IE包括：硅沟道层12; 设置在硅沟道层12的第一部分上的第一氧化镁膜13A; 以及设置在第一氧化镁膜13A上的第一铁磁层14A。 在第一氧化镁膜13A中，部分存在与硅沟道层12和第一铁磁层14A两者晶格匹配的第一晶格匹配部分P. 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JPH11353648A

公开(公告)日：1999-12-24

申请号：JP16231898

申请日：1998-06-10

Applicant: AKITA PREFECTURE

Inventor： SUZUKI YOSHIO ,  HONDA NAOKI ,  OUCHI KAZUHIRO

IPC: G11B11/10 ,  C23C14/34 ,  G11B5/84 ,  G11B11/12

Abstract: PROBLEM TO BE SOLVED: To provide a producing method of a record medium having excellent storage stability of high density information recording, especially information by magnetic recording. SOLUTION: In the producing method of an information record medium in which information is recorded and reproduced by using a magnetic field or light, at least one base layer essentially comprising elements or compds. selected from Cr, Pt, Pd, Au, Fe, Ni, MgO and NiO is formed while the crystalline plane with (100) Miller index of the crystal lattice is controlled to be parallel to the substrate. Further, an L10 regular alloy layer is formed by sputtering under the conditions satisfying P×D>3000, wherein P is the Ar gas pressure (Pa) and D is the distance (mm) between the target and the substrate. This producing method of the record medium consisting of the regular alloy thin film above described is used for a glass substrate for an industrial hard disk. Thereby, the regularity necessary to develop large crystal magnetic anisotropy is promoted at a low temp. at which the glass substrate can be applied so that the recording storage stability of a record medium is improved.

公开(公告)号：JP2010239011A

公开(公告)日：2010-10-21

申请号：JP2009086920

申请日：2009-03-31

Applicant: Akita Prefecture ,  Tdk Corp ,  Tdk株式会社 ,  秋田県

Inventor： SASAKI TOMOO ,  OIKAWA TORU ,  TAGAMI MASAMICHI ,  SUZUKI YOSHIO

IPC: H01L29/82

Abstract: PROBLEM TO BE SOLVED: To provide a spin injection structure, capable of maintaining improved characteristics by removing disadvantage that passing polarized spins are disturbed by lattice mismatch and the polarized spins decrease since MgO is not subjected to epitaxial growth on Si, in conventional spin implantation structures. SOLUTION: The spin injection structure includes a channel layer 7 made of Si, a magnetized fixed layer 12B made of a ferromagnetic body formed on the channel layer 7, and a first tunnel barrier 8B interposed between the channel layer 7 and the magnetized fixed layer 12B. Furthermore, the first tunnel barrier 8B includes an amorphous MgO layer positioned in a region at the side of the channel layer 7, and a single-crystal MgO layer positioned, in a region at the side of the magnetized fixed layer 12B. Likewise, a second tunnel barrier 8C includes an amorphous MgO layer, positioned in a region at the side of the channel layer 7 and a single-crystal MgO layer positioned in a region on the side of a magnetized fixed layer 12C. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种自旋注入结构，其能够通过消除通过偏振自旋受到晶格失配的不利影响而保持改进的特性，并且由于在Si上不对MgO进行外延生长，偏振自旋减小，所以常规 旋转植入结构。 解决方案：自旋注入结构包括由Si制成的沟道层7，由形成在沟道层7上的铁磁体制成的磁化固定层12B，以及介于沟道层7和磁化层 固定层12B。 此外，第一隧道势垒8B包括位于沟道层7侧的区域中的非晶MgO层和位于磁化固定层12B侧的区域中的单晶MgO层。 类似地，第二隧道势垒8C包括位于沟道层7侧的区域中的无定形MgO层和位于磁化固定层12C侧的区域中的单晶MgO层。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2003141721A

公开(公告)日：2003-05-16

申请号：JP2001339696

申请日：2001-11-05

Applicant: AKITA PREFECTURE

Inventor： SUZUKI YOSHIO ,  OUCHI KAZUHIRO

IPC: C23C14/06 ,  C23C14/34 ,  G11B5/65 ,  G11B5/66 ,  G11B5/738 ,  G11B5/851 ,  H01F41/18

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a recording medium which has fine magnetic domain structures and realizes high reproduced output and low medium noise by proposing a technique of reducing the magnetic domain size of the information recording layer of a high-density magnetic recording medium, more particularly a two-layered perpendicular magnetic recording medium having an L10 type rule alloy in the information recording layer. SOLUTION: The method of manufacturing the two-layered perpendicular magnetic recording medium having a layer consisting of the L10 type ordered alloy selected from a group A as an information recording layer comprises making the layer which has the same composition as the composition of the L10 type ordered alloy and in which the crystalline structure is an irregular structure (S11) before making the L10 type ordered alloy layer (the information recording layer) by sputtering film formation. The group A includes an FePt ordered alloy, CoPt ordered alloy, FePd ordered alloy, and their alloys. The two-layered perpendicular magnetic recording medium having the fine magnetic domain structures can be made by this manufacturing method.

公开(公告)号：JP2009246082A

公开(公告)日：2009-10-22

申请号：JP2008089702

申请日：2008-03-31

Applicant: Akita Prefecture ,  秋田県

Inventor： SUZUKI YOSHIO

IPC: H01F10/32 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y25/00 ,  B82Y40/00 ,  C23C14/06 ,  H01F10/16 ,  H01F10/28 ,  H01F10/30 ,  H01F41/18 ,  H01F41/20 ,  H01L21/316 ,  H01L29/82 ,  H01L33/00 ,  H01L33/24 ,  H01L33/30

Abstract: PROBLEM TO BE SOLVED: To provide a ferromagnetic laminate structure which is composed of a ferromagnetic thin film with favorable interface characteristics, an insulating thin-film, and a compound semiconductor. SOLUTION: In a magnetic body laminate structure 10, an insulating thin film 2 and a ferromagnetic thin film 3 are sequentially formed on a compound semiconductor 1. The insulating thin-film 2 is formed of a fluorinated compound with a fluorite structure, and the ferromagnetic thin film 3 is a ferromagnetic material formed of Fe or an FeCo alloy. The ferromagnetic laminate structure 10 is used by injecting spin-polarized electrons into the compound semiconductor 1 from the ferromagnetic thin film 3 through the insulating thin film 2. For example, the ferromagnetic laminate structure 10 can be used as an spin LED, and the compound semiconductor 1 can be also used as a light-emitting layer. In this case, since there is few crystal defects of each interface in the structure, thereby, the high injection efficiency of the spin-polarized electron to the light-emitting layer is obtained, and the highly-efficient spin LED can be obtained. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供由具有良好界面特性的铁磁薄膜，绝缘薄膜和化合物半导体构成的铁磁层压结构。 解决方案：在磁性体层叠结构体10中，在化合物半导体1上依次形成绝缘薄膜2和铁磁性薄膜3.绝缘薄膜2由萤石结构的氟化化合物形成， 铁磁薄膜3是由Fe或FeCo合金形成的铁磁材料。 铁磁层压结构体10通过从铁磁性薄膜3经由绝缘薄膜2将自旋极化电子注入到化合物半导体1中而使用。例如，铁磁性层叠结构体10可以用作自旋式LED，化合物 半导体1也可以用作发光层。 在这种情况下，由于结构中的各界面的晶体缺陷少，所以获得了自发极化电子对发光层的高注入效率，能够获得高效率的自旋LED。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2012134229A

公开(公告)日：2012-07-12

申请号：JP2010283253

申请日：2010-12-20

Applicant: Akita Prefecture ,  Tdk Corp ,  Tdk株式会社 ,  秋田県

Inventor： SUZUKI YOSHIO

IPC: H01L29/82

CPC classification number: H01F41/34 ,  G11B5/3909

Abstract: PROBLEM TO BE SOLVED: To obtain a large spin polarization current.SOLUTION: A monocrystalline MgO layer is grown on a Si monocrystalline substrate, and a lattice is matched. Furthermore, a ferromagnetic metal layer is formed thereon. A (100) growth face of the MgO layer is formed on a (100) face of the Si monocrystalline substrate. Here, on an interface of the Si monocrystalline substrate and the MgO layer, a Si(100)[110] direction is parallel to a MgO(100)[100] direction. Figure 2(a) shows the Si(100) face, Figure 2(b) shows the MgO(100) face, and Figure 2(c) shows a status that lattices of the two faces are matched with each other. The Si(100) face (a) is constituted by only Si atoms 111, and the MgO(100) face (b) is constituted by Mg atoms 121 and oxygen (O) atoms 122. Here, the MgO(100) face is grown on the Si(100) face, and as shown in Figure 2(c), on the interface, the Si(100)[110] direction is parallel to the MgO(100)[100] direction.

Abstract translation: 要解决的问题：获得大的自旋极化电流。 解决方案：单晶MgO层在Si单晶衬底上生长，晶格匹配。 此外，在其上形成铁磁性金属层。 在Si单晶衬底的（100）面上形成MgO层的（100）生长面。 这里，在Si单晶衬底和MgO层的界面上，Si（100）[110]方向平行于MgO（100）[100]方向。 图2（a）表示Si（100）面，图2（b）表示MgO（100）面，图2（c）表示两面相互匹配的状态。 Si（100）面（a）仅由Si原子111构成，MgO（100）面（b）由Mg原子121和氧（O）原子122构成。这里，MgO（100）面为 在Si（100）面上生长，如图2（c）所示，在界面上，Si（100）[110]方向平行于MgO（100）[100]方向。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2010238956A

公开(公告)日：2010-10-21

申请号：JP2009086019

申请日：2009-03-31

Applicant: Akita Prefecture ,  Tdk Corp ,  Tdk株式会社 ,  秋田県

Inventor： SASAKI TOMOO ,  OIKAWA TORU ,  TAGAMI MASAMICHI ,  SUZUKI YOSHIO

IPC: H01L29/82 ,  G01R33/09 ,  G11B5/39 ,  H01L21/8246 ,  H01L27/105

Abstract: PROBLEM TO BE SOLVED: To provide a spin conductive device having improved characteristics by suppressing diffusion of metal atoms of magnetized free layers, magnetized fixed layers, and tunnel insulating layers to channel layers. SOLUTION: The spin conductive device 100 includes a channel layer, a metal oxide layer 8 that is provided on the channel layer and includes one of an aluminum oxide, a titanium oxide, a zinc oxide, and a beryllium oxide, a magnesium oxide layer 9 provided on the metal oxide layer 8, a magnetized free layer 12C provided at a first part of the magnesium oxide layer 9, and a magnetized fixed layer 12B provided on a second part of the magnesium oxide layer 9. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：通过抑制磁化自由层，磁化固定层和隧道绝缘层的金属原子扩散到沟道层，提供具有改进特性的自旋导电装置。 解决方案：旋转导电装置100包括沟道层，设置在沟道层上并包括氧化铝，氧化钛，氧化锌和氧化铍中的一种的金属氧化物层8，镁 设置在金属氧化物层8上的氧化物层9，设置在氧化镁层9的第一部分的磁化自由层12C和设置在氧化镁层9的第二部分上的磁化固定层12B。 ：（C）2011，JPO＆INPIT