公开(公告)号：JP2002082151A

公开(公告)日：2002-03-22

申请号：JP2000275313

申请日：2000-09-11

Applicant: AKITA PREFECTURE

Inventor： TAN KENJI ,  YAMAKAWA KIYOSHI ,  HONDA NAOKI ,  OUCHI KAZUHIRO ,  YAMAGUCHI MASAHIRO ,  ARAI KENICHI ,  SHIMADA HIROSHI

IPC: G01R33/02 ,  G11B5/33 ,  H01F10/12 ,  H01L43/00

Abstract: PROBLEM TO BE SOLVED: To provide a magnetic field sensor whose sensitivity is high in the high-frequency region, indluding GHz band. SOLUTION: The magnetic field sensor is a magnetic field sensor, which is composed of a thin-film magnetic impedance effect element using a magnetic thin film from among magnetic impedance elements as magnetic field sensors, using a magnetic impedance effect. Especially regarding the size shape of the element for the magnetic field sensor, when a current frequency to be energized is 1 GHz or higher, the size (width) of a magnetism-sensitive part magnetic material in a direction nearly perpendicular to a magnetic field sensing direction is formed be small (e.g. 1 μm) and slender with reference to a magnetic field, in such a way that the change in an impedance reflecting a change in the magnetization of the magnetism-sensitive part magnetic material (a soft magnetic material or the like) is generated or that the most noticeable magnetic field of the magnetic resonance of the magnetism-sensitive part magnetic material is lowered. Thereby, the high sensitivity of a magnetism-sensitive part can be realized, as compared with the conventional element (width of 100 μm), as shown in the graph.