公开(公告)号：US20020053720A1

公开(公告)日：2002-05-09

申请号：US09951391

申请日：2001-09-14

Applicant: ALSTOM

Inventor： Benoit Boursat ,  Emmanuel Dutarde ,  Luc Meysenc ,  Jose Saiz ,  Pierre Solomalala

IPC: H01L029/82

CPC classification number: H01L23/3735 ,  H01L23/147 ,  H01L23/538 ,  H01L2924/0002 ,  H01L2924/13055 ,  H05K1/0306 ,  H05K3/181 ,  H05K3/244 ,  H05K2201/064 ,  H05K2201/098 ,  H01L2924/00

Abstract: A substrate for an electronic circuit, the substrate comprising a wafer of silicon Si having a top face covered in an electrically insulating layer of silicon nitride SiN, said electrically insulating layer of silicon nitride supporting one or more conductive tracks obtained by metallizing the top face of said electrically insulating layer for the purpose of enabling one or more electronic components to be connected.

Abstract translation: 一种用于电子电路的衬底，所述衬底包括具有覆盖在氮化硅SiN的电绝缘层中的顶面的硅硅晶片，所述氮化硅的电绝缘层支撑一个或多个通过金属化 所述电绝缘层用于使一个或多个电子部件能够连接。