公开(公告)号：WO1997012402A1

公开(公告)日：1997-04-03

申请号：PCT/US1996015285

申请日：1996-09-24

Applicant: ANALOG DEVICES, INC.

Inventor： ANALOG DEVICES, INC. ,  MUNROE, Scott, C.

IPC: H01L29/768

CPC classification number: H01L29/76816 ,  H01L29/42396 ,  H01L29/768 ,  H01L29/772 ,  H01L29/7831 ,  H01L29/94

Abstract: A semiconductor device having a semiconductor region including a material of a first predetermined conductivity type; an insulating layer (40) provided on the semiconductor region; a gate electrode (32, 34, 38) provided on the insulating layer, the gate electrode forming a potential well within the semiconductor region in response to a potential being applied thereto; and a diffusion (36) of highly doped material of a second predetermined conductivity type being positioned within the semiconductor region, and which is applied through an opening in the gate electrode and the insulating layer (40), the diffusion (36) being in direct ohmic contact with the potential well. The diffusion (36) can be either a n+ or p+ diffusion. The diffusion (36) accommodates a reduction in lateral time constants of charge redistribution within the potential well, direct sensing of the charge in the well, and injection and extraction of charge to and from the well.

Abstract translation: 一种半导体器件，具有包括第一预定导电类型的材料的半导体区域; 设置在所述半导体区域上的绝缘层（40） 设置在所述绝缘层上的栅极电极，所述栅极电极响应于施加到所述栅电极的电位而在所述半导体区域内形成势阱; 并且第二预定导电类型的高掺杂材料的扩散（36）位于半导体区域内，并且通过栅电极和绝缘层（40）中的开口施加，扩散（36）直接 欧姆接触势阱。 扩散（36）可以是n +或p +扩散。 扩散（36）可以减少潜在井内的电荷再分配的横向时间常数，直接感测井中的电荷，以及向井和从井的注入和提取电荷。