公开(公告)号：WO1992014301A1

公开(公告)日：1992-08-20

申请号：PCT/US1992001092

申请日：1992-02-11

Applicant: ANALOG DEVICES, INC.

Inventor： ANALOG DEVICES, INC. ,  GANESAN, Apparajan ,  FERGUSON, Paul F., Jr. ,  ROBERTSON, David H.

IPC: H03F03/45

CPC classification number: H03F1/3211 ,  H03F1/223 ,  H03F3/45076

Abstract: Gain linearity problems caused by impact ionization in an active MOS device are avoided by connecting an MOS shield device in series with the active MOS device so that the overall supply voltage is split across two devices, keeping both devices in a region of operation well below where impact ionization becomes a significant problem. The gate of the MOS shield device is maintained at a voltage proportional to its drain voltage, thereby keeping the device in the saturation mode and avoiding an abrupt mode change associated with prior art shield circuits.

Abstract translation: 通过将MOS屏蔽器件与有源MOS器件串联连接来避免在有源MOS器件中产生的冲击电离引起的增益线性问题，使得整个电源电压在两个器件之间分离，从而将两个器件保持在低于 冲击电离成为一个重大问题。 MOS屏蔽器件的栅极保持与其漏极电压成比例的电压，从而保持器件处于饱和模式，并避免与现有技术的屏蔽电路相关的突然模式变化。