公开(公告)号：WO1993026049A1

公开(公告)日：1993-12-23

申请号：PCT/US1993005448

申请日：1993-06-08

Applicant: APA OPTICS, INC.

Inventor： APA OPTICS, INC. ,  VAN HOVE, James, M. ,  KUZNIA, Jon, N. ,  OLSON, Donald, T. ,  KHAN, Muhammad, Asif ,  BLASINGAME, Margaret, C.

IPC: H01L31/030

CPC classification number: H01L31/03046 ,  H01L31/0224 ,  H01L31/1852 ,  Y02E10/544

Abstract: The invention is an AlxGa1-xN ultraviolet detector with extremely high responsivity at over 200 to 365 nanometers and a very sharp long wavelength cutoff. The active layer for the sensors is a single crystal AlxGa1-xN preferably deposited over a basal plane sapphire substrate using a switched atomic layer epitaxy process.