公开(公告)号：US20040195562A1

公开(公告)日：2004-10-07

申请号：US10723382

申请日：2003-11-25

Applicant: APA Optics, Inc.

Inventor： Gordon Munns

IPC: H01L047/00

CPC classification number: H01L29/66462 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/7787

Abstract: The invention provides a device having a substrate, a buffer region positioned upon the substrate, wherein the buffer region has an upper buffer region and a lower buffer region, a heterojunction region positioned upon the buffer region, and a superlattice positioned between the lower buffer region and the upper buffer region, wherein the device is configured to function as a heterojunction field effect transistor.

Abstract translation: 本发明提供了一种具有衬底，位于衬底上的缓冲区的器件，其中缓冲区具有上缓冲区和下缓冲区，位于缓冲区上的异质结区和位于下缓冲区之间的超晶格 和上缓冲区，其中该器件被配置为用作异质结场效应晶体管。