INTEGRATED GaN POWER MODULE
    1.
    发明申请

    公开(公告)号:WO2023009232A1

    公开(公告)日:2023-02-02

    申请号:PCT/US2022/033472

    申请日:2022-06-14

    Applicant: APPLE INC.

    Abstract: Integrated power modules according to the present technology may include a printed circuit board characterized by a first surface and a second surface. The integrated power modules may include one or more surface-mounted components coupled with the first surface of the printed circuit board. The integrated power modules may include a heat-transfer substrate. The integrated power modules may include one or more gallium nitride transistors coupled between and soldered to each of the second surface of the printed circuit board and the heat-transfer substrate. The integrated power modules may include one or more spacers coupled between and soldered to each of the printed circuit board and the heat-transfer substrate.

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