Abstract:
An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.
Abstract:
A display may have a color filter layer (56) and a thin-film transistor layer (58). A layer of liquid crystal material (52) may be located between the color filter layer and the thin-film transistor (TFT) layer. The TFT layer may include thin-film transistors (308) formed on top of a glass substrate (302). A passivation layer (320) may be formed on the thin-film transistor layers. A first low-k dielectric layer (322) may be formed on the passivation layer. Data line routing structures may be formed on the first low-k dielectric layer. A second low-k dielectric layer (324) may be formed on the first low-k dielectric layer. A common voltage electrode (326) and associated storage capacitance may be formed on the second low-k dielectric layer. The first and second low-k dielectric layers may be formed from material having substantially similar refractive indices to maximize backlight transmittance and may have appropriate thicknesses so as to minimize parasitic capacitive loading.
Abstract:
A display may have a thin-film transistor layer and color filter layer. The display may have an active area and an inactive border area. Light blocking structures in the inactive area may prevent stray backlight from a backlight light guide plate from leaking out of the display. The thin-film transistor layer may have a clear substrate, a patterned black masking layer on the clear substrate, a clear planarization layer on the black masking layer, and a layer of thin- film transistor circuitry on the clear planarization layer. The black masking layer may be formed from black photoimageable polyimide. The clear planarization layer may be formed from spin-on glass. The light blocking structures may include a first layer formed from a portion of the black masking layer and a second layer such as a layer of black tape on the underside of the color filter layer.