公开(公告)号：JP2008116949A

公开(公告)日：2008-05-22

申请号：JP2007280804

申请日：2007-10-29

Applicant: Applied Materials Inc ,  アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated

Inventor： CHANDRACHOOD MADHAVI R ,  SABHARWAL AMITABH ,  LEUNG TOI YUE BECKY ,  GRIMBERGEN MICHAEL

IPC: G03F1/08

CPC classification number: G03F1/80

Abstract: PROBLEM TO BE SOLVED: To provide a method and an apparatus for etching a metal layer disposed on a substrate such as a photolithographic reticle.
SOLUTION: In one aspect, a method is provided for processing a substrate including steps of: positioning a substrate having a metal photomask layer, disposed on an optically transparent material in a processing chamber; introducing a processing gas comprising an oxygen-containing gas, a chlorine-containing gas, at least one of trifluoromethane (CHF
3 ), sulfur hexafluoride (SF
6 ), hexafluoroethane (C
2 F
6 ) or ammonia (NH
3 ) and optionally a chlorine-free halogen-containing gas and/or an inert gas, into the processing chamber; generating a plasma of the processing gas in the processing chamber; and etching the exposed portions of the meta layer disposed on the substrate.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于蚀刻设置在诸如光刻掩模版的基板上的金属层的方法和设备。 解决方案：一方面，提供一种处理衬底的方法，包括以下步骤：将设置在处理室中的光学透明材料上的金属光掩模层的衬底定位; 引入包含含氧气体，含氯气体，三氟甲烷（CHF 3 SB 3），六氟化硫（SF 6 ），六氟乙烷 （NH 3 SB 3）或氨（NH 3 SB 3）和任选的无氯的含卤素气体和/或惰性气体进入 处理室; 在处理室中产生处理气体的等离子体; 并蚀刻设置在基板上的元件层的露出部分。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：WO02090245A2

公开(公告)日：2002-11-14

申请号：PCT/US0214142

申请日：2002-05-01

Applicant: APPLIED MATERIALS INC

Inventor： LEUNG TOI YUE BECKY ,  CHINN JEFFREY D

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81C1/0096 ,  B81B3/0005 ,  B81C2201/0176 ,  B81C2201/112 ,  B82Y30/00

Abstract: The invention includes methods of forming microstructure devices. In an exemplary method, a substrate is provided which includes a first material and a second material. At least one of the first and second materials is exposed to vapor-phase alkylsilane-containing molecules to form a coating over the at least one of the first and second materials.

Abstract translation: 本发明包括形成微结构器件的方法。 在示例性方法中，提供了包括第一材料和第二材料的基底。 将第一和第二材料中的至少一种暴露于含气相烷基硅烷的分子，以在第一和第二材料中的至少一种材料上形成涂层。