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    VCSEL WITH ANTIGUIDE CURRENT CONFINEMENT LAYER
    4.
    发明专利
    VCSEL WITH ANTIGUIDE CURRENT CONFINEMENT LAYER 未知

    公开(公告)号：AU2003223396A1

    公开(公告)日：2003-10-13

    申请号：AU2003223396

    申请日：2003-03-28

    Applicant: APPLIED OPTOELECTRONICS INC

    Inventor： HWANG WEN-YEN ,  ANSELM KLAUS ALEXANDER ,  ZHENG JUN

    IPC: H01S5/183 ,  H01S5/20 ,  H01S5/22 ,  H01S3/08

    Abstract: A surface-emitting laser, such as a VCSEL, for generating single-transverse mode laser light at a lasing wavelength, has a first mirror and a second mirror positioned so as to define a laser cavity therebetween, and a semiconductor active region disposed between the first and second mirrors for amplifying, by stimulated emission, light in the laser cavity at the lasing wavelength. An annular antiguide structure is disposed within the laser cavity and between the active region and one of the first and second mirrors, the annular antiguide structure comprising an antiguide material and having a central opening, the central opening comprising a second material having an index of refraction for light at the lasing wavelength smaller than that of the antiguide material, whereby the annular antiguide structure causes preferential antiguiding of higher order transverse lasing modes in the laser cavity.

    VCSEL WITH SINGLE LASING-REFLECTIVITY PEAK REFLECTOR
    6.
    发明申请
    VCSEL WITH SINGLE LASING-REFLECTIVITY PEAK REFLECTOR 审中-公开
    具有单个激光反射镜的VCSEL

    公开(公告)号：WO02071630A3

    公开(公告)日：2003-07-31

    申请号：PCT/US0205578

    申请日：2002-02-26

    Applicant: APPLIED OPTOELECTRONICS INC

    Inventor： HWANG WEN-YEN ,  LIN CHIH-HSIANG ,  BAILLARGEON JAMES N

    IPC: H01S5/0687 ,  H01S5/183 ,  G02B6/30 ,  G02B6/42 ,  H01S3/08 ,  H01S5/32

    CPC classification number: H01S5/18361 ,  H01S5/0687

    Abstract: A laser apparatus has a first mirror, a second mirror, at least a portion of which is defined by the first and second mirrors. The laser has an active region located in the laser cavity, which is capable of stimulated emission at one or more wavelengths of light. The second mirror comprises a plurality of dielectric layers arranged in parallel and having a reflectivity band with a peak reflectivity at a peak wavelength, said reflectivity band having a width of less than 1 nm at a reflectivity of 3 % less than the peak reflectivity. The laser apparatus may be a tunable laser apparatus in which the peak wavelength of the reflectivity band is adjusted, thereby adjusting the lasing wavelength of the laser. The reflectivity band may be a lasing threshold reflectivity band over which the reflectivity of the second mirror is greater than a lasing threshold reflectivity which is sufficient to permit lasing.

    Abstract translation: 激光装置具有第一反射镜，第二反射镜，其至少一部分由第一和第二反射镜限定。 激光器具有位于激光器腔中的有源区，其能够在一个或多个波长的光下被激发。 第二反射镜包括平行排列并具有在峰值波长处具有峰值反射率的反射率带的多个电介质层，所述反射率带的反射率比峰值反射率小3％，其宽度小于1nm。 激光装置可以是其中调整反射带的峰值波长的可调谐激光装置，从而调节激光器的激光波长。 反射率带可以是激光阈值反射带，第二反射镜的反射率大于其足以允许激光的激光阈值反射率。

    WDM SYSTEM WITH EXTERNALLY MODULATED FILTERED LASER ARRAY
    7.
    发明公开
    WDM SYSTEM WITH EXTERNALLY MODULATED FILTERED LASER ARRAY 审中-公开
    与外部WDM方式调制滤光的激光阵列

    公开(公告)号：EP2904726A4

    公开(公告)日：2016-06-22

    申请号：EP13843383

    申请日：2013-10-03

    Applicant: APPLIED OPTOELECTRONICS INC

    Inventor： ZHENG JUN ,  MURRY STEFAN ,  HWANG WEN-YEN

    IPC: H04J14/02 ,  H01S5/40

    CPC classification number: H01S5/4062 ,  H01S5/4087 ,  H04J14/0254 ,  H04J14/0279 ,  H04J14/0282

    Abstract: A filtered laser array assembly generally includes an array of laser emitters coupled between external modulators and an arrayed waveguide grating (AWG). Each of the laser emitters emits light across a plurality of wavelengths including, for example, channel wavelengths in an optical communication system. The AWG filters the emitted light from each of the laser emitters at different channel wavelengths associated with each of the laser emitters. Lasing cavities are formed between each of the laser emitters and a back reflector coupled to an output of the AWG such that laser output from the laser emitters is provided at the respective channel wavelengths of the reflected, filtered light. The external modulators enable high speed modulation of the laser output. The modulated laser output may then be optically multiplexed to produce an aggregate optical signal including multiple channel wavelengths.

    SINGLE-MODE DBR LASER WITH IMPROVED PHASE-SHIFT SECTION AND METHOD FOR FABRICATING SAME
    8.
    发明公开
    SINGLE-MODE DBR LASER WITH IMPROVED PHASE-SHIFT SECTION AND METHOD FOR FABRICATING SAME 审中-公开
    具有改进相位滑动部分和方法生产单模DBR激光器

    公开(公告)号：EP1509975A4

    公开(公告)日：2005-06-15

    申请号：EP03731472

    申请日：2003-05-29

    Applicant: APPLIED OPTOELECTRONICS INC

    Inventor： HWANG WEN-YEN ,  ANSELM KLAUS ALEXANDER ,  ZHENG JUN

    IPC: H01S5/0625 ,  H01S5/10 ,  H01S5/12 ,  H01S3/08 ,  H01S5/00

    CPC classification number: H01S5/1082 ,  H01S5/12 ,  H01S5/1203 ,  H01S5/124 ,  H01S5/1243

    Abstract: An edge-emitting laser (100) for generating single-longitudinal mode laser light. A semiconductor active region (120) amplifies, by stimulated emission, light in the laser cavity at a lasing wavelength. There are first and second grating sections (141,143) adjacent to the active region (120) and having first and second reflectivities respectively and a first effective index of refraction. The first and second grating sections (141,143) have a Bragg wavelength substantially equal to the lasing wavelength. A gratingless phase-shift section (142) is disposed adjacent to the active region (120) and between the first and second grating sections (141,143) and has a second index of refraction different than the first index of refraction and a length sufficient to impart a phase shift for light at the lasing wavelength sufficient to achieve longitudinal mode operation.

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