公开(公告)号：DE1920183A1

公开(公告)日：1970-08-27

申请号：DE1920183

申请日：1969-04-21

Applicant: APPLIED RES LAB INC

Inventor： A ANDERSEN CHRISTIAN ,  J RODEN HENRY

IPC: H01J37/317 ,  G01Q10/04 ,  H01J27/02 ,  H01J37/252 ,  H01J49/14 ,  H01L21/265 ,  G01N23/00

Abstract: 1,259,505. Ion beam apparatus; solid state devices. APPLIED RESEARCH LABORATORIES Inc. 22 April, 1969 [22 April, 1968], No. 20517/69. Headings H1D and H1K. A specimen of an electrically insulating material, including poorly conductive materials such as semi-conductors, is bombarded with negatively charged ions of such an energy that they drive secondary electrons out of the specimen to remove charges at a rate to compensate fully for the charges carried to the surface of the specimen by the ions. This technique may be used to implant particles of atomic dimension into the insulating material, for example for making solid state electronic devices, or to sputter the insulating material. Alternatively, the insulating material may be analysed by mass spectrometrically analysing the sputtered secondary ions from the material. Preferably, the negatively charged ions are oxygen ions which may be extracted from a duoplasmatron source. The energy of the ions may be in the range of 1000 to 20,000 electron volts.

公开(公告)号：DE1806113A1

公开(公告)日：1969-10-16

申请号：DE1806113

申请日：1968-10-30

Applicant: APPLIED RES LAB INC

Inventor： A ANDERSEN CHRISTIAN ,  J LIEBL HELMUT

IPC: G01N23/225 ,  G01N27/62 ,  H01J37/252 ,  H01J49/14 ,  H01J39/34