公开(公告)号：JPS501673A

公开(公告)日：1975-01-09

申请号：JP12908373

申请日：1973-11-16

Applicant: ASEA AB

Inventor： WALLMARK J T ,  BAKOWSKI M

IPC: H01L29/73 ,  H01L21/00 ,  H01L21/331 ,  H01L23/29 ,  H01L29/00 ,  H01L29/861

公开(公告)号：SE7412030L

公开(公告)日：1976-03-26

申请号：SE7412030

申请日：1974-09-25

Applicant: ASEA AB

Inventor： WALLMARK J T ,  BAKARNOSKI M

IPC: H01L29/36 ,  H01L1/10

公开(公告)号：DE2356674C2

公开(公告)日：1983-11-03

申请号：DE2356674

申请日：1973-11-13

Applicant: ASEA AB

Inventor： WALLMARK J T ,  BAKOWSKI M

IPC: H01L29/73 ,  H01L21/00 ,  H01L21/331 ,  H01L23/29 ,  H01L29/00 ,  H01L29/861 ,  H01L29/06

Abstract: A semiconductor of the kind comprising at least one pn-junction the doping of which in the p-region (n-region) increases continuously or gradually from the pn-junction, and also having an isolating surface layer at least at the marginal portion of said pn-junction. In this semiconductor a first portion of said surface layer is positioned outside the substantially p-doped (n-doped) region, and a second portion of said surface layer is positioned outside the n-doped (p-doped) region of said pn-junction, said first portion having a permanently negative (positive) surface charge relative to said second portion.

公开(公告)号：SE387474B

公开(公告)日：1976-09-06

申请号：SE7412030

申请日：1974-09-25

Applicant: ASEA AB

Inventor： WALLMARK J T ,  BAKOWSKI M

IPC: H01L29/36

公开(公告)号：SE375881B

公开(公告)日：1975-04-28

申请号：SE1493772

申请日：1972-11-17

Applicant: ASEA AB

Inventor： WALLMARK J T ,  BAKOWSKI M

IPC: H01L29/73 ,  H01L21/00 ,  H01L21/331 ,  H01L23/29 ,  H01L29/00 ,  H01L29/861 ,  H01L23/18

Abstract: A semiconductor of the kind comprising at least one pn-junction the doping of which in the p-region (n-region) increases continuously or gradually from the pn-junction, and also having an isolating surface layer at least at the marginal portion of said pn-junction. In this semiconductor a first portion of said surface layer is positioned outside the substantially p-doped (n-doped) region, and a second portion of said surface layer is positioned outside the n-doped (p-doped) region of said pn-junction, said first portion having a permanently negative (positive) surface charge relative to said second portion.