公开(公告)号：US20040007940A1

公开(公告)日：2004-01-15

申请号：US10194215

申请日：2002-07-15

Applicant: Asia Pacific Microsystems, Inc.

Inventor： Shu-Hui Tsai ,  Ching-Yee Chang ,  Chung-Hsien Lin

IPC: H03H009/25

CPC classification number: H03H9/02031 ,  H03H3/02 ,  H03H9/02543 ,  H03H9/171 ,  H03H9/172 ,  H03H2003/0071

Abstract: A thin film acoustic wave device and the manufacturing method thereof, it provides a method of manufacturing acoustic wave devices of different FOM (figures of merit) by means of the crystalline orientation of the piezoelectric layer in cooperated with the various electric field directions of the driving electrode, so as to provide acoustic wave devices that are optimized under various specifications.

Abstract translation: 一种薄膜声波装置及其制造方法，其提供了通过与驱动的各种电场方向配合的压电层的结晶取向来制造不同FOM（品质因数）的声波装置的方法 电极，以提供在各种规格下优化的声波装置。

公开(公告)号：US20030000058A1

公开(公告)日：2003-01-02

申请号：US10126541

申请日：2002-04-22

Applicant: ASIA PACIFIC MICROSYSTEMS, INC.

Inventor： Shu-Hui Tsai ,  Chengkuo Lee ,  Chung-Hsien Lin ,  Ju-Mei Lu

IPC: H04R017/00 ,  H05K003/02

CPC classification number: H03H3/02 ,  Y10T29/42 ,  Y10T29/49128 ,  Y10T29/49155

Abstract: A method for manufacturing a film bulk acoustic wave filter, wherein a single-layer high-acoustic-impedance reflection layer is applied for the film bulk acoustic wave, for example, a diamond film with single-layer high-acoustic-impedance or a BCB film with single-layer low-acoustic-impedance is used as a reflection layer under the film bulk acoustic wave device in order to replace the cavity-reflective construction or the multi-layer reflection construction that are presently used; thus, there is no need for etching the cavity, the steadiness of the device and the yield of the device can be improved, and the FOM (figure of merit) of the film acoustic wave device is also improved; further, as there is no backside etching and front-side etching proceeded, the size of die is reduced greatly, so it is advantageous to mass production.

Abstract translation: 一种制造薄膜体声波滤波器的方法，其中单层高声阻抗反射层用于薄膜体声波，例如具有单层高声阻抗的金刚石薄膜或BCB 为了代替目前使用的空腔反射结构或多层反射结构，在薄膜体声波装置的下面使用具有单层低声阻抗的膜作为反射层; 因此，不需要蚀刻空腔，可以提高器件的稳定性和器件的产量，并且还提高了膜声波器件的FOM（品质因数）; 此外，由于没有背面蚀刻和前侧蚀刻，所以模具的尺寸大大降低，因此有利于批量生产。

公开(公告)号：US20040036569A1

公开(公告)日：2004-02-26

申请号：US10223362

申请日：2002-08-20

Applicant: Asia Pacific Microsystems, Inc.

Inventor： Shu-Hui Tsai ,  Shang-Yu Liang ,  Chun-Hsien Lee

IPC: H01F005/00

CPC classification number: H01F17/0033 ,  H01F41/042 ,  H01L27/08 ,  Y10T29/4902

Abstract: A three dimensional adjustable high frequency inductor, its module and fabrication method of the same; the high frequency module comprises micro high frequency inductors, filters, resistors, capacitors and associated with active components or power components to form a hybrid circuit, then it is packaged by using the technology of flip chip or wafer level packaging, so as to upgrade properties of high frequency modules and reduce the packaging and instrumentation costs by minimizing the modular size.

Abstract translation: 三维可调高频电感器，其模块和制造方法相同; 高频模块包括微型高频电感器，滤波器，电阻器，电容器，并与有源元件或功率元件相关联以形成混合电路，然后通过使用倒装芯片或晶圆级封装的技术进行封装，从而提高性能 的高频模块，并通过最小化模块化尺寸来降低封装和仪器成本。

公开(公告)号：US20040063039A1

公开(公告)日：2004-04-01

申请号：US10464495

申请日：2003-06-19

Applicant: ASIA PACIFIC MICROSYSTEMS, INC.

Inventor： Shang-Yu Liang ,  Shu-Hui Tsai ,  Chun-Hsien Lee ,  Chung-Hsien Lin

IPC: G03F007/16 ,  G03F007/20 ,  G03F007/40

CPC classification number: H01L23/645 ,  H01F17/0013 ,  H01F41/045 ,  H01F2017/0046 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/056 ,  H01L2224/16 ,  H01L2924/3011 ,  H01L2924/00014

Abstract: Disclosed herein is a method for inductor An Improved Structure For the Endpiece of Tape Rule of the high frequency integrated passive devices in which a spiral inductor pattern is formed on an insulation substrate, the spiral inductor pattern is spirally coiled outwards from the center. A thick film dielectric layer made of bisbenzocyclobutene (BCB) is formed on the spiral inductor pattern. A metal layer can be formed according to under bump metallization technique (UBM). The metal layer is either formed into a continuous spirally coiled form or a spread discrete configuration. With this structure, laser trimming can be applied to the metal layer pattern so as to acquire an ideal inductance value, thereby achieving wafer level trimming and compensating the process tolerance.

Abstract translation: 这里公开了一种电感器的方法。在绝缘基板上形成有螺旋形电感器图案的高频集成无源器件的带状端子规则的改进结构中，螺旋形电感器图案从中心向外螺旋地卷绕。 在螺旋电感图案上形成由双苯并环丁烯（BCB）制成的厚膜电介质层。 可以根据凸块下金属化技术（UBM）形成金属层。 金属层或者形成为连续的螺旋卷曲形式或扩展的离散构造。 利用该结构，可以对金属层图案施加激光微调，以获得理想的电感值，从而实现晶片级修整并补偿工艺公差。

公开(公告)号：US20030205948A1

公开(公告)日：2003-11-06

申请号：US10253861

申请日：2002-09-25

Applicant: Asia Pacific Microsystems, Inc.

Inventor： Chung-Hsien Lin ,  Shu-Hui Tsai ,  Chen-Hsun Du ,  Ruey-Shing Huang

IPC: H01L041/08

CPC classification number: H03H3/04 ,  H03H9/542 ,  H03H2003/0071 ,  H03H2003/0464

Abstract: A film bulk acoustic device having integrated trimmable device comprises a FBAR and a integrated tunable and trimmable device being integrated on a common substrate, at least a common electrode or piezoelectric layer. By trimming the integrated trimmable device or the FBAR and alter either the capacitance or inductance of the integrated trimmable device until the film bulk acoustic device having integrated trimmable device achieves the target resonance frequency. By taking advantage of the electrostatic force, the integrated tunable device is capable of providing tuning until the film bulk acoustic device having integrated tunable device achieves the target resonance frequency.

Abstract translation: 具有集成可调整装置的胶片体音响装置包括一个FBAR和集成的可调和可调整装置，其集成在共同的基板上，至少是公共电极或压电层。 通过修整集成可调整装置或FBAR，并改变集成可调整装置的电容或电感，直到具有集成可调整装置的胶片体声装置达到目标共振频率。 通过利用静电力，集成的可调谐装置能够提供调谐，直到具有集成的可调谐装置的膜体音响装置达到目标共振频率。

公开(公告)号：US20020189062A1

公开(公告)日：2002-12-19

申请号：US10134369

申请日：2002-04-30

Applicant: ASIA PACIFIC MICROSYSTEMS, INC.

Inventor： Chung-Hsien Lin ,  Ju-Mei Lu ,  Shu-Hui Tsai ,  Chenkuo Lee

IPC: H04R017/00 ,  H05K003/02

CPC classification number: H03H3/02 ,  H04R17/00 ,  Y10T29/42 ,  Y10T29/49128 ,  Y10T29/49155

Abstract: A manufacturing method for a high quality film bulk acoustic wave device, wherein a lower electrode protecting layer is partially defined or not applied, thus the quality factor of the bulk acoustic wave device is improved.

Abstract translation: 一种用于高质量薄膜压电元件的制造方法，其中部分限定或不施加下电极保护层，从而提高了体声波器件的品质因数。