公开(公告)号：WO2008055017A2

公开(公告)日：2008-05-08

申请号：PCT/US2007/081991

申请日：2007-10-19

Applicant: ASM AMERICA, INC. ,  ELERS, Kai-erik

Inventor： ELERS, Kai-erik

CPC classification number: C23C16/45525 ,  C23C16/4554 ,  C23C16/50 ,  H01L21/28088 ,  H01L29/4966 ,  H01L29/517

Abstract: Metallic-compound films are formed by plasma-enhanced atomic layer deposition (PEALD). According to preferred methods, film or thin film composition is controlled by selecting plasma parameters to tune the oxidation state of a metal (or plurality of metals) in the film. In some embodiments, plasma parameters are selected to achieve metal-rich metallic-compound films. The metallic-compound films can be components of gate stacks, such as gate electrodes. Plasma parameters can be selected to achieve a gate stack with a predetermined work function.

Abstract translation: 通过等离子体增强的原子层沉积（PEALD）形成金属化合物膜。 根据优选的方法，通过选择等离子体参数来调节膜中的金属（或多种金属）的氧化态来控制膜或薄膜组合物。 在一些实施例中，选择等离子体参数以获得富含金属的金属化合物膜。 金属化合物膜可以是栅极堆叠的组件，诸如栅极电极。 可以选择等离子体参数来实现具有预定功函数的栅极堆叠。

公开(公告)号：WO2008051851A1

公开(公告)日：2008-05-02

申请号：PCT/US2007/081960

申请日：2007-10-19

Applicant: ASM AMERICA, INC. ,  ELERS, Kai-erik ,  EILK, Glen ,  MARCUS, Steven

Inventor： ELERS, Kai-erik ,  EILK, Glen ,  MARCUS, Steven

IPC: C23C16/08 ,  C23C16/32 ,  C23C16/50 ,  C23C16/455

CPC classification number: C23C16/32 ,  C23C16/45527 ,  C23C16/45542 ,  C23C16/515

Abstract: Methods of forming a metal carbide film are provided. In some embodiments, methods for forming a metal carbide film in an atomic layer deposition (ALD) type process comprise alternately and sequentially contacting a substrate in a reaction space with vapor phase pulses of a metal compound 102 and one or more plasma-excited species of a carbon-containing compound 106. In other embodiments, methods of forming a metal carbide film in a chemical vapor deposition (CVD) type process comprise simultaneously contacting a substrate in a reaction space with a metal compound 102 and one or more plasma-excited species of a carbon-containing compound 106. The substrate is further exposed to a reducing agent 103. The reducing agent removes impurities, including halogen atoms and/or oxygen atoms.

Abstract translation: 提供了形成金属碳化物膜的方法。 在一些实施例中，用于在原子层沉积（ALD）型工艺中形成金属碳化物膜的方法包括交替地和顺序地将反应空间中的衬底与金属化合物102的气相脉冲和一种或多种等离子体激发的 在其它实施方案中，在化学气相沉积（CVD）型方法中形成金属碳化物膜的方法包括同时使反应空间中的底物与金属化合物102和一种或多种等离子体激发的物质 的底物进一步暴露于还原剂103.还原剂除去杂质，包括卤原子和/或氧原子。