公开(公告)号：WO2019158995A3

公开(公告)日：2019-08-22

申请号：PCT/IB2019/000127

申请日：2019-02-11

Applicant: ASM IP HOLDING B.V.

Inventor： HATANPAA, Timo ,  VAYRNEN, Katja ,  RITALA, Mikko ,  LESKELA, Markku

IPC: C23C16/455 ,  H01L21/02 ,  H01L21/768

Abstract: A method of forming a transition metal containing films on a substrate by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a transition metal halide compound comprising a bidentate nitrogen containing adduct ligand; and contacting the substrate with a second vapor phase reactant. A method for supplying a transition metal halide compound comprising a bidentate nitrogen containing ligand to a reaction chamber is disclosed, along with related vapor deposition apparatus.

公开(公告)号：WO2019158995A2

公开(公告)日：2019-08-22

申请号：PCT/IB2019/000127

申请日：2019-02-11

Applicant: ASM IP HOLDING B.V.

Inventor： HATANPAA, Timo ,  VAYRNEN, Katja ,  RITALA, Mikko ,  LESKELA, Markku

IPC: C23C16/455 ,  H01L21/02

Abstract: A method of forming a transition metal containing films on a substrate by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a transition metal halide compound comprising a bidentate nitrogen containing adduct ligand; and contacting the substrate with a second vapor phase reactant. A method for supplying a transition metal halide compound comprising a bidentate nitrogen containing ligand to a reaction chamber is disclosed, along with related vapor deposition apparatus.