公开(公告)号：KR20100097083A

公开(公告)日：2010-09-02

申请号：KR20100070881

申请日：2010-07-22

Applicant: ASML HOLDING NV

Inventor： SEWELL HARRY ,  MARKOYA LOUIS JOHN

IPC: G03F7/20

CPC classification number: G03F7/70925 ,  G03F7/70341

Abstract: PURPOSE: A system and a method for cleaning a lens in-situ in immersion lithography is provided to prevent the damages to final lens elements and to efficiently performing an in-situ cleaning process of final lens elements without removing the leans and repositioning the lens. CONSTITUTION: An apparatus for immersion lithography comprises: an energy source(110); a projection optical system(130); a stage(160) which a substrate(150) is arranged in and moves the substrate; a showerhead including an immersion liquid feed device and an immersion liquid discharge device; and a cleaning device which cleans a part of the projection optical system contacting immersed liquid(140) through cleaning gas. The cleaning device includes a UV source.

Abstract translation: 目的：提供一种用于在浸没式光刻中原位清洁透镜的系统和方法，以防止对最终透镜元件的损坏，并有效地执行最终透镜元件的原位清洁过程，而无需去除倾斜和重新定位透镜。 构成：浸没式光刻装置包括：能量源（110）; 投影光学系统（130）; 衬底（150）布置在衬底中并移动衬底的平台（160） 包括浸没液体供给装置和浸没液体排出装置的喷头; 以及清洁装置，其通过清洁气体清洁与浸入液体接触的投影光学系统的一部分。 清洁装置包括UV源。

公开(公告)号：KR20100129212A

公开(公告)日：2010-12-08

申请号：KR20100049965

申请日：2010-05-28

Applicant: ASML NETHERLANDS BV ,  ASML HOLDING NV

Inventor： DOYTCHEVA MAYA ANGELOVA ,  DUSA MIRCEA ,  VAN HAREN RICHARD JOHANNES FRANCISCUS ,  SEWELL HARRY ,  VAN DER HEIJDEN ROBERTUS WILHELMUS

IPC: H01L21/027 ,  G03F9/00

CPC classification number: H01L21/0273 ,  G03F7/0035 ,  G03F7/40 ,  G03F7/70466 ,  G03F9/7065 ,  G03F9/708 ,  G03F9/7084 ,  Y10T428/24802 ,  Y10T428/24851 ,  H01L21/0274

Abstract: PURPOSE: An apparatus and a method for providing resist aligning marks in a dual patterning lithography process are provided to reinforce the symmetric property of the aligning marks by regulating the thickness of resist layers. CONSTITUTION: A substrate is coated with a first resist layer(1010). A first resist layer is developed to form a first lithography pattern with a first aligning mark(1020). A first lithography pattern is frozen(1030). The frozen first lithography pattern is coated with a second resist layer(1040). The second resist layer is hardened to form a second aligning mark(1050). The second aligning mark is used for perform a successive lithography process(1060).

Abstract translation: 目的：提供一种用于在双重图案化光刻工艺中提供抗蚀剂对准标记的装置和方法，以通过调节抗蚀剂层的厚度来增强对准标记的对称性质。 构成：衬底涂有第一抗蚀剂层（1010）。 显影第一抗蚀剂层以形成具有第一对准标记（1020）的第一光刻图案。 第一个光刻图案被冻结（1030）。 冷冻的第一光刻图案涂覆有第二抗蚀剂层（1040）。 第二抗蚀剂层被硬化以形成第二对准标记（1050）。 第二对准标记用于执行连续的光刻工艺（1060）。

公开(公告)号：JP2011171767A

公开(公告)日：2011-09-01

申请号：JP2011124883

申请日：2011-06-03

Applicant: Asml Holding Nv ,  Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ. ,  エーエスエムエル ホールディング エヌ.ブイ.

Inventor： ANTONIUS LEENDERS MARTINUS HENDRIKUS ,  LAMBERTUS DONDERS SJOERD NICOLAAS ,  SEWELL HARRY ,  MARKOYA LOUIS JOHN ,  VERMAELEN MARKUS MARTINUS PETRUS ADRIANUS ,  MCCAFFERTY DIANE C

IPC: H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide an apparatus with favorable liquid removing performance.
SOLUTION: A new method is disclosed useful for immersion lithography, a new method for drying and/or wetting a surface, such as an upper surface of a substrate. The surface is positioned under a single phase extractor, and priming liquid is delivered between the single phase extractor and the surface. The single phase extractor operates only after the priming liquid is provided between the single phase extractor and the surface. The priming liquid is delivered to the single phase extractor throughout the process to dry and/or to wet.
COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供具有有利的除液性能的装置。 解决方案：公开了一种用于浸没式光刻的新方法，用于干燥和/或润湿表面（例如衬底的上表面）的新方法。 表面位于单相萃取器下方，并且引发液体在单相萃取器和表面之间输送。 单相萃取器只有在单相萃取器和表面之间提供引发液体后才进行操作。 引发液体在整个过程中被输送到单相萃取器中以干燥和/或湿润。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010157717A

公开(公告)日：2010-07-15

申请号：JP2009285854

申请日：2009-12-17

Applicant: Asml Holding Nv ,  エーエスエムエル ホールディング エヌ.ブイ.

Inventor： SEWELL HARRY ,  NIHTIANOV STOYAN ,  SCACCABAROZZI LUIGI

IPC: H01L21/027 ,  G03F1/16

CPC classification number: G03B27/42 ,  G01N2021/95676

Abstract: PROBLEM TO BE SOLVED: To provide a system and method for inspecting an extreme ultraviolet (EUV) mask. SOLUTION: This system includes an array of sensors and an optical system. The array of sensors is configured to produce analog data corresponding to received optical energy. The optical system is configured to direct EUV light from an inspection area of an EUV patterning device onto the array of sensors, whereby the analog data are used to determine defects or to compensate for anomalies found on the EUV mask. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于检查极紫外（EUV）掩模的系统和方法。

解决方案：该系统包括一组传感器和光学系统。 传感器阵列被配置为产生对应于接收到的光能的模拟数据。 光学系统被配置为将EUV光从EUV图案形成装置的检查区域引导到传感器阵列上，由此模拟数据用于确定缺陷或补偿在EUV掩模上发现的异常。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2009094528A

公开(公告)日：2009-04-30

申请号：JP2008297046

申请日：2008-11-20

Applicant: Asml Holding Nv ,  エーエスエムエル ホールディング エヌ.ブイ.

Inventor： SEWELL HARRY

IPC: G02B13/14 ,  H01L21/027 ,  G03B27/42 ,  G03F7/20

CPC classification number: G03F7/70341 ,  G03F7/70233

Abstract: PROBLEM TO BE SOLVED: To provide a simple system and a method for confining liquid between a projection optical system and a wafer in a liquid immersion photolithography system. SOLUTION: The liquid immersion photolithography system includes an exposure system that exposes a substrate 101 with electromagnetic radiation, and also includes a projection optical system 100 that focuses the electromagnetic radiation on the substrate, and a liquid supply system for providing liquid between the projection optical system 100 and the substrate 101, and the projection optical system is positioned below the substrate. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于在液浸光刻系统中在投影光学系统和晶片之间限制液体的简单系统和方法。 解决方案：液浸式光刻系统包括用电磁辐射使基板101曝光的曝光系统，还包括将电磁辐射聚焦在基板上的投影光学系统100和用于在基板101之间提供液体的液体供应系统 投影光学系统100和基板101，投影光学系统位于基板的下方。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2006066919A

公开(公告)日：2006-03-09

申请号：JP2005246663

申请日：2005-08-26

Applicant: Asml Holding Nv ,  エーエスエムエル ホールディング ナームローゼ フェンノートシャップASML Holding N.V.

Inventor： MARKOYA LOUIS ,  KHMELICHEK ALEKSANDR ,  SEWELL HARRY

IPC: H01L21/027 ,  G02B5/04 ,  G02B5/18 ,  G03F7/20

CPC classification number: G03F7/70408 ,  G03F7/70341 ,  G03F7/7035 ,  G03F7/70383 ,  G03F7/70516

Abstract: PROBLEM TO BE SOLVED: To provide a system provided with an adjustable resolution which is free of the complexity of matching an interference lithography system in common use.
SOLUTION: There are provided a laser that outputs a laser beam 106, a beam splitter 103 for dividing the laser beam 106 into a plurality of beams 107, and a prism 101 that forms interference fringes on a substrate by using the plurality of beams, wherein the resolution of a lithography system can be adjusted without exchanging each optical components, in an optical path of the lithography system.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种具有可调分辨率的系统，其在常见的使用中没有匹配干涉光刻系统的复杂性。 解决方案：提供了一种激光器，其输出激光束106，用于将激光束106分成多个光束107的分束器103以及通过使用多个激光束106在基板上形成干涉条纹的棱镜101 光束，其中可以调整光刻系统的分辨率而不在光刻系统的光路中交换每个光学部件。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005210115A

公开(公告)日：2005-08-04

申请号：JP2005006630

申请日：2005-01-13

Applicant: Asml Holding Nv ,  エーエスエムエル ホールディング ナームローゼ フェンノートシャップ

Inventor： SEWELL HARRY

IPC: G02F1/13 ,  G03F7/20 ,  H01L21/027

CPC classification number: G03F7/70566 ,  A61B6/4435 ,  G03F7/70283 ,  G03F7/70291

Abstract: PROBLEM TO BE SOLVED: To provide a maskless pattern generation system for directly writing a pattern in a substrate, which has no fault relevant to a reticle system and well-known light valve.
SOLUTION: The maskless pattern generation system is provided with: an optical source 202 which generates light beam 204; a programable pattern generator 206 which forms a pattern from the light beam 204, based on a control signal 208 input which commands the programable pattern generator 206 to set individual voltage levels corresponding to individual pixels in a pixel array, wherein individual voltage levels correspond to gray scale levels assigned to specific one of individual pixels, respectively; and a control unit 210 which supplies the control signal input to the programable pattern generator 206, based on a pattern information 114 supplied.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种无掩模图案生成系统，用于直接在基板上写入图案，该基板没有与掩模版系统和公知的光阀相关的故障。 解决方案：无掩模图案生成系统设置有：产生光束204的光源202; 可编程模式发生器206，其基于控制信号208输入形成来自光束204的模式，命令可编程模式发生器206设置与像素阵列中的各个像素相对应的各个电压电平，其中各个电压电平对应于灰色 分别分配给特定个别像素的比例级别; 以及控制单元210，其基于所提供的图案信息114来提供输入到可编程模式生成器206的控制信号。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2009253285A

公开(公告)日：2009-10-29

申请号：JP2009082271

申请日：2009-03-30

Applicant: Asml Holding Nv ,  Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ. ,  エーエスエムエル ホールディング エヌ.ブイ.

Inventor： SEWELL HARRY ,  BENSCHOP JOZEF PETRUS HENRICUS

IPC: H01L21/027 ,  G03F7/20

CPC classification number: G03F7/70283 ,  G03F7/70208

Abstract: PROBLEM TO BE SOLVED: To provide an improved multi-exposure patterning technology and/or a lithographic apparatus. SOLUTION: A lithographic apparatus where two patterning devices are simultaneously exposed onto a substrate and a method therefor are disclosed. The lithographic apparatus includes a plurality of illumination systems that receive a pulse radiation beam to make an adjustment, a beam director that is provided between a pulse radiation beam source and the illumination systems and alternately direct the pulses of the radiation beam to each illumination system, a support table that gives a pattern to the cross-sections of each adjusted radiation beam and retains a plurality of patterning devices to form the radiation beam with a pattern, and a projection system that matches each radiation beam with a pattern to project them onto the target portions of a substrate. The substrate is covered with a phase changing material. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供改进的多曝光图案化技术和/或光刻设备。 公开了一种将两个图案形成装置同时暴露在基板上的光刻设备及其方法。 光刻设备包括接收脉冲辐射束以进行调节的多个照明系统，设置在脉冲辐射束源和照明系统之间并且将辐射束的脉冲交替地引导到每个照明系统的光束指向器， 支撑台，其向每个经调整的辐射束的横截面提供图案，并且保持多个图案形成装置以形成具有图案的辐射束;以及投影系统，其将每个辐射束与图案匹配以将它们投影到 基板的目标部分。 衬底被相变材料覆盖。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2009177177A

公开(公告)日：2009-08-06

申请号：JP2009007808

申请日：2009-01-16

Applicant: Asml Holding Nv ,  エーエスエムエル ホールディング エヌ.ブイ.

Inventor： SEWELL HARRY ,  LOOPSTRA ERIK ROELOF ,  HUBERTUS MULKENS JOHANNES C ,  MARKOYA LOUIS JOHN ,  MCCAFFERTY DIANE

IPC: H01L21/027 ,  G03F7/20

CPC classification number: G03F7/70341

Abstract: PROBLEM TO BE SOLVED: To regenerate immersion fluid whose specified quality does not meet a specified threshold, and to make the regenerated immersion fluid recirculate. SOLUTION: A lithography apparatus includes a projection system, a fluid handling structure, a metrology device, and a recycle control device. The projection system projects a pattern projecting a radiation beam onto a target part of a substrate, and the substrate is supported on a substrate table. The fluid handling structure provides the immersion fluid to a space between the projection system and the substrate and/or the substrate table. The metrology device monitors a parameters of the immersion fluid. The recycle control device adjusts the routing of the immersion fluid so as to be reused or regenerated in the fluid handling structure, based on the quality of the immersion fluid indicated by the metrology device. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：为了再生特定质量不符合规定阈值的浸渍液，并使再生浸液流体再循环。 解决方案：光刻设备包括投影系统，流体处理结构，计量装置和再循环控制装置。 投影系统将投影辐射束的图案投影到基板的目标部分上，并且将基板支撑在基板台上。 流体处理结构将浸没流体提供到投影系统与衬底和/或衬底台之间的空间。 计量装置监测浸液的参数。 再循环控制装置基于由计量装置指示的浸液的质量来调节浸没流体的路线，以便在流体处理结构中重新使用或再生。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008131044A

公开(公告)日：2008-06-05

申请号：JP2007296176

申请日：2007-11-15

Applicant: Asml Holding Nv ,  エーエスエムエル ホールディング エヌ.ブイ.

Inventor： SEWELL HARRY

IPC: H01L21/027 ,  G03F7/20

CPC classification number: G03F7/70191 ,  G03F7/70091

Abstract: PROBLEM TO BE SOLVED: To use a system and a method for equalizing levels of intensity and energy of different diffraction order components of patterned beam. SOLUTION: The patterned beam is formed by using a diffraction patterning device. An attenuator is provided in a pupil of a projection system to attenuate each of the diffraction order components of the patterned beam. The projection device is also used to project the patterned beam on a target of a substrate after each of the attenuations. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：使用用于均衡图案化束的不同衍射级分量的强度和能量水平的系统和方法。 解决方案：通过使用衍射图案形成装置形成图案化的光束。 衰减器设置在投影系统的光瞳中，以衰减图案化束的每个衍射级分量。 投影装置还用于在每个衰减之后将图案化的光束投影到衬底的靶上。 版权所有（C）2008，JPO＆INPIT